JPS60178684A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS60178684A
JPS60178684A JP3347284A JP3347284A JPS60178684A JP S60178684 A JPS60178684 A JP S60178684A JP 3347284 A JP3347284 A JP 3347284A JP 3347284 A JP3347284 A JP 3347284A JP S60178684 A JPS60178684 A JP S60178684A
Authority
JP
Japan
Prior art keywords
layer
type
active layer
semiconductor laser
clad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3347284A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554279B2 (enrdf_load_stackoverflow
Inventor
Kentarou Onabe
尾鍋　研太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3347284A priority Critical patent/JPS60178684A/ja
Publication of JPS60178684A publication Critical patent/JPS60178684A/ja
Publication of JPH0554279B2 publication Critical patent/JPH0554279B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP3347284A 1984-02-24 1984-02-24 半導体レ−ザ Granted JPS60178684A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3347284A JPS60178684A (ja) 1984-02-24 1984-02-24 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3347284A JPS60178684A (ja) 1984-02-24 1984-02-24 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS60178684A true JPS60178684A (ja) 1985-09-12
JPH0554279B2 JPH0554279B2 (enrdf_load_stackoverflow) 1993-08-12

Family

ID=12387480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3347284A Granted JPS60178684A (ja) 1984-02-24 1984-02-24 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS60178684A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393189A (ja) * 1986-10-08 1988-04-23 Seiko Epson Corp 半導体発光素子
JPS63245984A (ja) * 1987-04-01 1988-10-13 Seiko Epson Corp 半導体発光素子及びその製造方法
US4992837A (en) * 1988-11-15 1991-02-12 Kokusai Denshin Denwa Co., Ltd. Light emitting semiconductor device
US5045897A (en) * 1990-03-14 1991-09-03 Santa Barbara Research Center Quaternary II-VI materials for photonics
US5299217A (en) * 1990-10-11 1994-03-29 Hitachi, Ltd. Semiconductor light-emitting device with cadmium zinc selenide layer
JPH0684524U (ja) * 1993-04-09 1994-12-02 松下電器産業株式会社 テープカセット検出装置
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
EP0632510A3 (en) * 1993-06-08 1995-04-12 Rohm Co Ltd Semiconductor light emitting device and manufacturing method.
US5513199A (en) * 1991-05-15 1996-04-30 Minnesota Mining And Manufacturing Company Blue-green laser diode

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393189A (ja) * 1986-10-08 1988-04-23 Seiko Epson Corp 半導体発光素子
JPS63245984A (ja) * 1987-04-01 1988-10-13 Seiko Epson Corp 半導体発光素子及びその製造方法
US4992837A (en) * 1988-11-15 1991-02-12 Kokusai Denshin Denwa Co., Ltd. Light emitting semiconductor device
US5045897A (en) * 1990-03-14 1991-09-03 Santa Barbara Research Center Quaternary II-VI materials for photonics
US5299217A (en) * 1990-10-11 1994-03-29 Hitachi, Ltd. Semiconductor light-emitting device with cadmium zinc selenide layer
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
US5513199A (en) * 1991-05-15 1996-04-30 Minnesota Mining And Manufacturing Company Blue-green laser diode
US5538918A (en) * 1991-05-15 1996-07-23 Minnesota Mining And Manufacturing Company Method of fabricating a buried-ridge II-VI laser diode
JPH0684524U (ja) * 1993-04-09 1994-12-02 松下電器産業株式会社 テープカセット検出装置
EP0632510A3 (en) * 1993-06-08 1995-04-12 Rohm Co Ltd Semiconductor light emitting device and manufacturing method.
US5548127A (en) * 1993-06-08 1996-08-20 Rohm Co., Ltd. Semiconductor light emitting device and its manufacturing method

Also Published As

Publication number Publication date
JPH0554279B2 (enrdf_load_stackoverflow) 1993-08-12

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