JPH0554279B2 - - Google Patents

Info

Publication number
JPH0554279B2
JPH0554279B2 JP3347284A JP3347284A JPH0554279B2 JP H0554279 B2 JPH0554279 B2 JP H0554279B2 JP 3347284 A JP3347284 A JP 3347284A JP 3347284 A JP3347284 A JP 3347284A JP H0554279 B2 JPH0554279 B2 JP H0554279B2
Authority
JP
Japan
Prior art keywords
layer
znte
semiconductor
active layer
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3347284A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60178684A (ja
Inventor
Kentaro Onabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP3347284A priority Critical patent/JPS60178684A/ja
Publication of JPS60178684A publication Critical patent/JPS60178684A/ja
Publication of JPH0554279B2 publication Critical patent/JPH0554279B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP3347284A 1984-02-24 1984-02-24 半導体レ−ザ Granted JPS60178684A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3347284A JPS60178684A (ja) 1984-02-24 1984-02-24 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3347284A JPS60178684A (ja) 1984-02-24 1984-02-24 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS60178684A JPS60178684A (ja) 1985-09-12
JPH0554279B2 true JPH0554279B2 (enrdf_load_stackoverflow) 1993-08-12

Family

ID=12387480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3347284A Granted JPS60178684A (ja) 1984-02-24 1984-02-24 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS60178684A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2643127B2 (ja) * 1986-10-08 1997-08-20 セイコーエプソン株式会社 半導体発光素子
JPS63245984A (ja) * 1987-04-01 1988-10-13 Seiko Epson Corp 半導体発光素子及びその製造方法
GB2226698B (en) * 1988-11-15 1992-05-20 Kokusai Denshin Denwa Co Ltd A light emitting semiconductor device
US5045897A (en) * 1990-03-14 1991-09-03 Santa Barbara Research Center Quaternary II-VI materials for photonics
US5299217A (en) * 1990-10-11 1994-03-29 Hitachi, Ltd. Semiconductor light-emitting device with cadmium zinc selenide layer
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
CN1111840A (zh) * 1991-05-15 1995-11-15 明尼苏达州采矿制造公司 蓝-绿激光二极管的制造方法
JPH0684524U (ja) * 1993-04-09 1994-12-02 松下電器産業株式会社 テープカセット検出装置
EP0632510B1 (en) * 1993-06-08 2001-10-31 Rohm Co., Ltd. Semiconductor light emitting device and its manufacturing method

Also Published As

Publication number Publication date
JPS60178684A (ja) 1985-09-12

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