JPS60175452A - トランジスタの製造方法 - Google Patents

トランジスタの製造方法

Info

Publication number
JPS60175452A
JPS60175452A JP59030653A JP3065384A JPS60175452A JP S60175452 A JPS60175452 A JP S60175452A JP 59030653 A JP59030653 A JP 59030653A JP 3065384 A JP3065384 A JP 3065384A JP S60175452 A JPS60175452 A JP S60175452A
Authority
JP
Japan
Prior art keywords
film
semiconductor layer
region
base
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59030653A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464179B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Toyooka
豊岡　哲夫
Takeshi Takanori
高乗　健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP59030653A priority Critical patent/JPS60175452A/ja
Publication of JPS60175452A publication Critical patent/JPS60175452A/ja
Publication of JPH0464179B2 publication Critical patent/JPH0464179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP59030653A 1984-02-20 1984-02-20 トランジスタの製造方法 Granted JPS60175452A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59030653A JPS60175452A (ja) 1984-02-20 1984-02-20 トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59030653A JPS60175452A (ja) 1984-02-20 1984-02-20 トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS60175452A true JPS60175452A (ja) 1985-09-09
JPH0464179B2 JPH0464179B2 (enrdf_load_stackoverflow) 1992-10-14

Family

ID=12309747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59030653A Granted JPS60175452A (ja) 1984-02-20 1984-02-20 トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS60175452A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150746A (ja) * 1985-12-24 1987-07-04 Rohm Co Ltd 半導体装置の配線形成方法
JPS62150748A (ja) * 1985-12-24 1987-07-04 Rohm Co Ltd 半導体装置の配線形成方法
JPS63207154A (ja) * 1987-02-23 1988-08-26 Nec Corp 半導体装置の製造方法
JPH03256332A (ja) * 1990-03-06 1991-11-15 Sharp Corp 縦型バイポーラトランジスタ素子及び該素子を備えたｂｉ―ＣＭＯＳインバータ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427774A (en) * 1977-08-03 1979-03-02 Nec Corp Semiconductor device
JPS5470776A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS57128063A (en) * 1981-01-30 1982-08-09 Toshiba Corp Semiconductor device and manufacture thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427774A (en) * 1977-08-03 1979-03-02 Nec Corp Semiconductor device
JPS5470776A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS57128063A (en) * 1981-01-30 1982-08-09 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150746A (ja) * 1985-12-24 1987-07-04 Rohm Co Ltd 半導体装置の配線形成方法
JPS62150748A (ja) * 1985-12-24 1987-07-04 Rohm Co Ltd 半導体装置の配線形成方法
JPS63207154A (ja) * 1987-02-23 1988-08-26 Nec Corp 半導体装置の製造方法
JPH03256332A (ja) * 1990-03-06 1991-11-15 Sharp Corp 縦型バイポーラトランジスタ素子及び該素子を備えたｂｉ―ＣＭＯＳインバータ

Also Published As

Publication number Publication date
JPH0464179B2 (enrdf_load_stackoverflow) 1992-10-14

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