JPS60169184A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS60169184A
JPS60169184A JP2645884A JP2645884A JPS60169184A JP S60169184 A JPS60169184 A JP S60169184A JP 2645884 A JP2645884 A JP 2645884A JP 2645884 A JP2645884 A JP 2645884A JP S60169184 A JPS60169184 A JP S60169184A
Authority
JP
Japan
Prior art keywords
active region
mesa
junction
insulating film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2645884A
Other languages
English (en)
Japanese (ja)
Other versions
JPH059951B2 (enrdf_load_stackoverflow
Inventor
Etsuji Omura
悦司 大村
Hirobumi Namisaki
浪崎　博文
Hideyo Higuchi
樋口　英世
Yasushi Sakakibara
靖 榊原
Kenji Ikeda
健志 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2645884A priority Critical patent/JPS60169184A/ja
Publication of JPS60169184A publication Critical patent/JPS60169184A/ja
Publication of JPH059951B2 publication Critical patent/JPH059951B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2645884A 1984-02-13 1984-02-13 半導体レ−ザ Granted JPS60169184A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2645884A JPS60169184A (ja) 1984-02-13 1984-02-13 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2645884A JPS60169184A (ja) 1984-02-13 1984-02-13 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS60169184A true JPS60169184A (ja) 1985-09-02
JPH059951B2 JPH059951B2 (enrdf_load_stackoverflow) 1993-02-08

Family

ID=12194061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2645884A Granted JPS60169184A (ja) 1984-02-13 1984-02-13 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS60169184A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194590A (ja) * 1984-03-16 1985-10-03 Hitachi Ltd 半導体レーザ素子の製造方法
JPS62185390A (ja) * 1986-02-10 1987-08-13 Nec Corp 半導体レ−ザダイオ−ド
JPS62259490A (ja) * 1986-05-02 1987-11-11 Nec Corp 埋め込みヘテロ構造半導体レ−ザ
JPS63137495A (ja) * 1986-11-28 1988-06-09 Nec Corp 半導体レ−ザ
JPS63288082A (ja) * 1987-05-20 1988-11-25 Hitachi Ltd 半導体レ−ザ装置
JP2009117539A (ja) * 2007-11-05 2009-05-28 Furukawa Electric Co Ltd:The 光半導体素子及び光半導体素子の製造方法
WO2021200583A1 (ja) * 2020-04-02 2021-10-07 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
JP2021163924A (ja) * 2020-04-02 2021-10-11 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133989A (enrdf_load_stackoverflow) * 1974-09-18 1976-03-23 Fujitsu Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133989A (enrdf_load_stackoverflow) * 1974-09-18 1976-03-23 Fujitsu Ltd

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194590A (ja) * 1984-03-16 1985-10-03 Hitachi Ltd 半導体レーザ素子の製造方法
JPS62185390A (ja) * 1986-02-10 1987-08-13 Nec Corp 半導体レ−ザダイオ−ド
JPS62259490A (ja) * 1986-05-02 1987-11-11 Nec Corp 埋め込みヘテロ構造半導体レ−ザ
JPS63137495A (ja) * 1986-11-28 1988-06-09 Nec Corp 半導体レ−ザ
JPS63288082A (ja) * 1987-05-20 1988-11-25 Hitachi Ltd 半導体レ−ザ装置
JP2009117539A (ja) * 2007-11-05 2009-05-28 Furukawa Electric Co Ltd:The 光半導体素子及び光半導体素子の製造方法
WO2021200583A1 (ja) * 2020-04-02 2021-10-07 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
JP2021163924A (ja) * 2020-04-02 2021-10-11 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
JP2021163925A (ja) * 2020-04-02 2021-10-11 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置

Also Published As

Publication number Publication date
JPH059951B2 (enrdf_load_stackoverflow) 1993-02-08

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Legal Events

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