JPS60165729A - 半導体高圧酸化装置 - Google Patents

半導体高圧酸化装置

Info

Publication number
JPS60165729A
JPS60165729A JP59020990A JP2099084A JPS60165729A JP S60165729 A JPS60165729 A JP S60165729A JP 59020990 A JP59020990 A JP 59020990A JP 2099084 A JP2099084 A JP 2099084A JP S60165729 A JPS60165729 A JP S60165729A
Authority
JP
Japan
Prior art keywords
chamber
pressure
substrate
wafer
100atms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59020990A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0568851B2 (cs
Inventor
Koichi Mase
間瀬　康一
Masayasu Abe
正泰 安部
Masaharu Aoyama
青山　正治
Takashi Yasujima
安島　隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59020990A priority Critical patent/JPS60165729A/ja
Publication of JPS60165729A publication Critical patent/JPS60165729A/ja
Publication of JPH0568851B2 publication Critical patent/JPH0568851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP59020990A 1984-02-08 1984-02-08 半導体高圧酸化装置 Granted JPS60165729A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59020990A JPS60165729A (ja) 1984-02-08 1984-02-08 半導体高圧酸化装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59020990A JPS60165729A (ja) 1984-02-08 1984-02-08 半導体高圧酸化装置

Publications (2)

Publication Number Publication Date
JPS60165729A true JPS60165729A (ja) 1985-08-28
JPH0568851B2 JPH0568851B2 (cs) 1993-09-29

Family

ID=12042567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59020990A Granted JPS60165729A (ja) 1984-02-08 1984-02-08 半導体高圧酸化装置

Country Status (1)

Country Link
JP (1) JPS60165729A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01280320A (ja) * 1988-05-06 1989-11-10 Tel Sagami Ltd 半導体加圧酸化方法
JPH01295425A (ja) * 1988-02-29 1989-11-29 Tel Sagami Ltd 酸化装置
JPH02130925A (ja) * 1988-11-11 1990-05-18 Tel Sagami Ltd 縦型加圧酸化装置
WO2005006426A1 (ja) * 2003-07-09 2005-01-20 Tokyo Electron Limited 高圧熱処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295425A (ja) * 1988-02-29 1989-11-29 Tel Sagami Ltd 酸化装置
JPH01280320A (ja) * 1988-05-06 1989-11-10 Tel Sagami Ltd 半導体加圧酸化方法
JPH02130925A (ja) * 1988-11-11 1990-05-18 Tel Sagami Ltd 縦型加圧酸化装置
WO2005006426A1 (ja) * 2003-07-09 2005-01-20 Tokyo Electron Limited 高圧熱処理装置

Also Published As

Publication number Publication date
JPH0568851B2 (cs) 1993-09-29

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