JPS60155580A - セラミツク基体または金属基体に銅部材を結合する方法 - Google Patents

セラミツク基体または金属基体に銅部材を結合する方法

Info

Publication number
JPS60155580A
JPS60155580A JP59191916A JP19191684A JPS60155580A JP S60155580 A JPS60155580 A JP S60155580A JP 59191916 A JP59191916 A JP 59191916A JP 19191684 A JP19191684 A JP 19191684A JP S60155580 A JPS60155580 A JP S60155580A
Authority
JP
Japan
Prior art keywords
copper
metal
substrate
bonding
eutectic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59191916A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0242798B2 (enExample
Inventor
ドミニク・アンソニイ・クサノ
ジエムス・アンソニイ・ラウフラン
ユエン―シエング・エドモンド・サン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS60155580A publication Critical patent/JPS60155580A/ja
Publication of JPH0242798B2 publication Critical patent/JPH0242798B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/06—Oxidic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/54—Oxidising the surface before joining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/56—Using constraining layers before or during sintering
    • C04B2237/567—Using constraining layers before or during sintering made of metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/76—Forming laminates or joined articles comprising at least one member in the form other than a sheet or disc, e.g. two tubes or a tube and a sheet or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/202—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using self-supporting metal foil pattern
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
JP59191916A 1975-07-30 1984-09-14 セラミツク基体または金属基体に銅部材を結合する方法 Granted JPS60155580A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US05/600,300 US3994430A (en) 1975-07-30 1975-07-30 Direct bonding of metals to ceramics and metals
US696899 1976-06-17
US600300 2003-06-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1096541A Division JPH01308885A (ja) 1975-07-30 1989-04-18 セラミック基体に銅部材を結合する方法

Publications (2)

Publication Number Publication Date
JPS60155580A true JPS60155580A (ja) 1985-08-15
JPH0242798B2 JPH0242798B2 (enExample) 1990-09-26

Family

ID=24403056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59191916A Granted JPS60155580A (ja) 1975-07-30 1984-09-14 セラミツク基体または金属基体に銅部材を結合する方法

Country Status (2)

Country Link
US (1) US3994430A (enExample)
JP (1) JPS60155580A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166774A (ja) * 1986-12-27 1988-07-09 同和鉱業株式会社 銅板とアルミナ基板との接合体の製造方法
US5153077A (en) * 1988-07-22 1992-10-06 Mitsubishi Denki Kabushiki Kaisha Ceramic-metal composite substrate

Families Citing this family (154)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129243A (en) * 1975-07-30 1978-12-12 General Electric Company Double side cooled, pressure mounted semiconductor package and process for the manufacture thereof
CH633391A5 (de) * 1978-11-22 1982-11-30 Bbc Brown Boveri & Cie Scheibenrotor fuer eine elektrische maschine.
US4278990A (en) * 1979-03-19 1981-07-14 General Electric Company Low thermal resistance, low stress semiconductor package
US4323483A (en) * 1979-11-08 1982-04-06 E. I. Du Pont De Nemours And Company Mixed oxide bonded copper conductor compositions
DE3036128C2 (de) * 1980-09-25 1983-08-18 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten Verbinden von Kupferfolien mit Oxidkeramiksubstraten
JPS5772234A (en) * 1980-10-20 1982-05-06 Matsushita Electric Ind Co Ltd Production of electrode structure
US4413766A (en) * 1981-04-03 1983-11-08 General Electric Company Method of forming a conductor pattern including fine conductor runs on a ceramic substrate
US4409278A (en) * 1981-04-16 1983-10-11 General Electric Company Blister-free direct bonding of metals to ceramics and metals
DE3127457C2 (de) * 1981-07-11 1985-09-12 Brown, Boveri & Cie Ag, 6800 Mannheim Stromrichtermodul
DE3204167A1 (de) * 1982-02-06 1983-08-11 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von metallstuecken mit oxidkeramiksubstraten
US4500029A (en) * 1982-06-11 1985-02-19 General Electric Company Electrical assembly including a conductor pattern bonded to a non-metallic substrate and method of fabricating such assembly
DE3376829D1 (en) * 1982-06-29 1988-07-07 Toshiba Kk Method for directly bonding ceramic and metal members and laminated body of the same
DE3233022A1 (de) * 1982-09-06 1984-03-08 BBC Aktiengesellschaft Brown, Boveri & Cie., 5401 Baden, Aargau Verfahren zum direkten verbinden eines koerpers mit einem keramischen substrat
US4468299A (en) * 1982-12-20 1984-08-28 Aluminum Company Of America Friction welded nonconsumable electrode assembly and use thereof for electrolytic production of metals and silicon
US4468298A (en) * 1982-12-20 1984-08-28 Aluminum Company Of America Diffusion welded nonconsumable electrode assembly and use thereof for electrolytic production of metals and silicon
US4457811A (en) * 1982-12-20 1984-07-03 Aluminum Company Of America Process for producing elements from a fused bath using a metal strap and ceramic electrode body nonconsumable electrode assembly
US4468300A (en) * 1982-12-20 1984-08-28 Aluminum Company Of America Nonconsumable electrode assembly and use thereof for the electrolytic production of metals and silicon
JPS59150453A (ja) * 1982-12-23 1984-08-28 Toshiba Corp 半導体モジユ−ル用基板の製造方法
US4538170A (en) * 1983-01-03 1985-08-27 General Electric Company Power chip package
GB8305366D0 (en) * 1983-02-25 1983-03-30 Secr Defence Cathode ray tube
US4574094A (en) * 1983-06-09 1986-03-04 Kollmorgen Technologies Corporation Metallization of ceramics
US4604299A (en) * 1983-06-09 1986-08-05 Kollmorgen Technologies Corporation Metallization of ceramics
DE3324661A1 (de) * 1983-07-08 1985-01-17 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von metall mit keramik
EP0135120B1 (de) * 1983-08-23 1988-03-09 BBC Brown Boveri AG Keramik-Metall-Element
GB2146174B (en) * 1983-09-06 1987-04-23 Gen Electric Hermetic power chip packages
JPS60131875A (ja) * 1983-12-20 1985-07-13 三菱重工業株式会社 セラミツクと金属の接合法
US4563383A (en) * 1984-03-30 1986-01-07 General Electric Company Direct bond copper ceramic substrate for electronic applications
CH660176A5 (de) * 1984-07-06 1987-03-31 Bbc Brown Boveri & Cie Metall-keramik-verbundelement und verfahren zu dessen herstellung.
US4647477A (en) * 1984-12-07 1987-03-03 Kollmorgen Technologies Corporation Surface preparation of ceramic substrates for metallization
EP0185967A3 (en) * 1984-12-10 1988-08-03 Kollmorgen Corporation Process for avoiding blister formation in electroless metallization of ceramic substrates
US4602731A (en) * 1984-12-24 1986-07-29 Borg-Warner Corporation Direct liquid phase bonding of ceramics to metals
JPS61176142A (ja) * 1985-01-31 1986-08-07 Toshiba Corp 基板構造体
JPH0785495B2 (ja) * 1985-03-18 1995-09-13 ティーディーケイ株式会社 酸化物セラミツク上の銅電極形成法
US4635497A (en) * 1985-08-26 1987-01-13 Clark Michigan Company Single lever shift
JPS6272576A (ja) * 1985-09-26 1987-04-03 株式会社東芝 セラミツクス−金属接合体
DE3538933A1 (de) * 1985-11-02 1987-05-14 Bbc Brown Boveri & Cie Leistungshalbleitermodul
US4872606A (en) * 1985-12-11 1989-10-10 Hitachi, Ltd. Sealed structure and production method thereof
DE3617456A1 (de) * 1986-05-23 1987-12-03 Vaw Ver Aluminium Werke Ag Verfahren und vorrichtung zur festen verbindung von keramischen formteilen mit metallen
US5058799A (en) * 1986-07-24 1991-10-22 Zsamboky Kalman F Metallized ceramic substrate and method therefor
DE3639021A1 (de) * 1986-11-14 1988-05-26 Philips Patentverwaltung Verfahren zum verloeten von keramischen bauteilen
EP0273227A3 (en) * 1986-12-22 1989-01-25 Kalman F. Zsamboky A method of improving bond strength between a metal layer and a non-metallic substrate
US4816422A (en) * 1986-12-29 1989-03-28 General Electric Company Fabrication of large power semiconductor composite by wafer interconnection of individual devices
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US3994430A (en) 1976-11-30
JPH0242798B2 (enExample) 1990-09-26

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