JPS60147147A - 半導体用リ−ドフレ−ム - Google Patents

半導体用リ−ドフレ−ム

Info

Publication number
JPS60147147A
JPS60147147A JP59003137A JP313784A JPS60147147A JP S60147147 A JPS60147147 A JP S60147147A JP 59003137 A JP59003137 A JP 59003137A JP 313784 A JP313784 A JP 313784A JP S60147147 A JPS60147147 A JP S60147147A
Authority
JP
Japan
Prior art keywords
layer
alloy
lead frame
plating
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59003137A
Other languages
English (en)
Inventor
Norio Okabe
則夫 岡部
Ryozo Yamagishi
山岸　良三
Osamu Yoshioka
修 吉岡
Yoshiaki Wakashima
若島　喜昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Hitachi Ltd
Original Assignee
Hitachi Cable Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd, Hitachi Ltd filed Critical Hitachi Cable Ltd
Priority to JP59003137A priority Critical patent/JPS60147147A/ja
Publication of JPS60147147A publication Critical patent/JPS60147147A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
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    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
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    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の背景と目的〕 本発明はＩＣなどの半導体装置に用いられる半導体用リ
ードフレームに関スる。
従来、ＩＣなどの半導体装置用リードフレームの素材と
しては、セラミックなどの封止材に近似した低熱膨張率
を有するコ・ζ−ル、４２合金などの鉄系合金が用いら
れてきたが、近年ゾ２スチック・ぐツケージの普及ある
いは素子の高出力化や高集積化に伴なう熱放散性の問題
から熱伝導性の良好な銅または銅合金材料が多く使用さ
れるようになってきた。
これらのリードフレームでは素子とり−Ｐフレームの接
合（ダイゼンデイング）および素子とリードの結線（ワ
イヤゼンデイ／グ）を行う必要上、通常基体表面にＡｇ
めつきを施こしたものが多く用いられているが、最近、
経済性の観点から高価な銀の使用量を減少させるため、
銀めっきの範囲をジ−１フレームの半導体素子固定部分
およびこれと金線などの金属細線によシ接続されるジー
１之゛端子部分に限定した部分銀めっきり−ト°フレー
ムが一般的になシつつある。
この場合、非銀めっき部分は基体の銅素地が露出してい
るため、前記したグイＩンディング工程やワイヤゼンデ
イング工程などにおいて加熱される密着性の悪い銅の酸
化膜が形成され、封止樹脂との接着性が低下する問題か
あった。
一方、銅素地の酸化を防ぎ、樹脂との接着性を向上させ
る方法として、リードフレーム基体全面にニッケル下地
めっきを施こす方法が好適であるが、銀が酸素を透過し
やすい性質を有することから、銀めっき厚の薄い場合、
酸化雰囲気での加熱によりニッケル下地金属層の表面が
酸化される結果、銀めっき層の密着性が低下し、銀めっ
き層の剥離やふくれなどの問題を生ずることがあシ、必
要以上に銀めっき厚を厚くしなければならないという問
題があった。
本発明の目的は、前記した従来技術の欠点を解消し、熱
伝導性の高い銅または銅合金を素材とし、かつ信頼性、
経済性に優れた半導体用リードフレームを提供すること
にある。
〔発明の要旨〕
本発明者らは種々検討を重ねた結果、ニッケル下地金属
層と銀層との間に０ｕ−Ｚｎ合金および／またはＣｕ−
Ｓｎ合金からなる合金層を中間層として設けることによ
シ前記目的が達成されることを見出した。
すなわち、本発明は、銅または銅合金からなる基体の全
面にニッケル下地金属層を設け、前記ニッケル層上の半
導体素子固定部分および該半導体素子と金属細線により
結線されるリード端子部分に、Ｏｕ　Ｚ＋ｎ合金および
Ｃｕ−Ｓｎ合金の少くとも１種からなる合金層と銀層を
順次積層したことを特徴とする半導体用リードフレーム
である。
本発明において、ニッケル下地金属層は、基体　゛を構
成する銅または銅合金の酸化を防止して樹脂との接着性
を高めるとともに、銅の銀層中への熱拡散を防止するも
のであって、無光沢ニッケルめっき、光沢ニッケルめっ
きの他に、Ｎ　ｉ　−Ｃｏ　＋　Ｎｉ　−１’　１Ｎｉ
−Ｂなどのニッケル合金めっきにより構成することがで
きる。（本発明で云うニッケル下地金属層とは、このよ
うなニッケル金属層をも包含する）０本発明におい−Ｃ
は、前記ニッケル下地金属層の特定部分に０ｕ−Ｚｎ合
金および／またはＣ！ｕ　Ｓｎ合金層めっきによって設
け、さらにこの合金層］−に銀めっき層を設ける。
本発明の特長であるＣ・−Ｚ・合金および７寸だ　゛は
０ｕ−Ｓｎ合金によシ構成される中間層は銀層を透過す
る酸素によってニッケル下地金属層が酸化するのを防止
すると共に、ニッケル下地金属層と銀めっき層との密着
性を高める効果を有し、この中間層を設けることによシ
銀めっき厚を減少させることができる。
〔実施例〕
以下、添付図面を参照しつつ本発明の半導体用リードフ
レームの実施例について説明する。
実施例１ 第１図は本発明半導体用リードフレームの一態様を示す
平面図、第２図はその要部拡大横断面図である。
厚さ０．２５郷の錫入シ銅からなる所望の・ξターンに
打抜かれた基板１を脱脂、酸洗等の前処理した後に、該
基体全面に厚さ約０．５μのニッケル下地金属層２をめ
っきによって形成し、さらに第１図で破線で囲まれた部
分、すなわち、半導体素子固定部分５および外部リート
端子７の端部にある内部り−Ｐ端子部分６に厚さ約０．
１μの０ｕ−Ｚｎ合金層（ｚｎ含有量３０重量％）３及
び厚さ約３μの銀めっき層４を順次形成し、第２図に示
す如き断面構造のリードフレームを得た。
なお、リードフレームの破線部分のみに前記の如き合金
層３と銀めっき層４を設けるには、ＩＪ−ドフレームの
他の部分を適当々月料でマスクしてからめっきを行えば
よい。
実施例２ 実施例１において、Ｏｕ　Ｚｎ合金層３０代わりに厚さ
約０．１μの０ｕ−Ｓｎ合金層（Ｓｎｎ含有量２電 と同様な操作を行い、同様な断面構造のリードフレーム
を得た。
一方、比較例として、実施例１と同様な基板にニッケル
下地金属層を設けることなく、その破線部分に厚さ３μ
の銀めっき層のみを設けたリードフレーム（比較例１）
と、同様な基体全面に厚さ０５μのニッケル下地金属層
を設け、さらにその破線部分に厚さ３μの銀めっき層を
設けた＋）　＋，１フレーム、（比較例２）を作成し、
前記実施例で得られた本発明のり一Ｐフレームとの比較
に供した。
すなわち、前記実施例お．よび比較例で得られた各リー
ドフレームを大気中にて４００℃で５分間加熱し、樹脂
との接着性に影響するり−ｒ部（非銀めっき部）の耐酸
化性および銀めっきの密着性を調べた。得られた結果を
下表に示した。
なお、リード部の耐酸化性は粘着テープを貼付、剥離し
たときの表面酸化膜の剥離の有無、また銀めっきの密着
性は釧めっき形成部分を折シ曲げた時の銀めっきの剥離
状況にょシそれぞれ判定した。
判定：○・・・良好（剥離なし）、×・・・不良（剥離
あシ）。
なお、第３図は本発明の半導体用リードフレームを用い
て構成したＩＣパッケージの一例を示す横断面図である
。図示の例において、ソー１−″フレームの半導体素子
固定部分５上に設けられた金属層にろう材または接着剤
８を介してＩＣチップ９を固定し、金ａ１０にてＩＣチ
ップ９とり一１３フレームのリード内部端子部分の金属
層を接続し、全体をモールド樹脂１１で封止してｒＣ，
パッケージを構成する。
〔発明の効果〕
上記の表からも明かなように、本発明によれは封止樹脂
との接着性、銀めっき密着性などの特性を低下させるこ
となく、熱放散性の優れた安価な銅系リードフレームの
提供が可能となり、もって、これらを使用する半導体装
置の信頼性、経済性向上に寄与することができ、本発明
の工業的価値は犬々るものがある。
４、図面の簡単な説明　？ 第１図は本発明の半導体用リードフレームの一実施例を
示す平面図、第２図は同要部拡大横断面図、第３図は本
発明の半導体用リードフレームを用いて構成したＩＣ−
ξソケージの一例を示す横断面図である。
Ｊ・・・基体、２・・・Ｎ重下地金属層、３・・・０ｕ
−Ｚｎ合金中間層、４・・Ａｇ層、５　・半導体素子固
定部分、６・・・リード内部端子部分、７・・・外部リ
ード端子、８・ろう材または接着剤、９・・・ｒＣチッ
プ、１ｏ・・・Ａｕ味　１　図 味　３　図

Claims (1)

    【特許請求の範囲】
  1. （１）　銅または銅合金からなる基体の全面にニッケル
    下地金属層を設け、前記ニッケル層上の半導体素子固定
    部分および該半導体素子と金属細線により結線されるリ
    ード端子部分に０ｕ−Ｚｎ合金および０ｕ−８ｎ合金の
    少くとも一種からなる合金属と銀層を順次積層したこと
    を特徴とする半導体用リードフレーム。
JP59003137A 1984-01-10 1984-01-10 半導体用リ−ドフレ−ム Pending JPS60147147A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59003137A JPS60147147A (ja) 1984-01-10 1984-01-10 半導体用リ−ドフレ−ム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59003137A JPS60147147A (ja) 1984-01-10 1984-01-10 半導体用リ−ドフレ−ム

Publications (1)

Publication Number Publication Date
JPS60147147A true JPS60147147A (ja) 1985-08-03

Family

ID=11548961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59003137A Pending JPS60147147A (ja) 1984-01-10 1984-01-10 半導体用リ−ドフレ−ム

Country Status (1)

Country Link
JP (1) JPS60147147A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1281789A1 (en) * 2001-07-31 2003-02-05 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) A plated copper alloy material and process for production thereof
US6593643B1 (en) * 1999-04-08 2003-07-15 Shinko Electric Industries Co., Ltd. Semiconductor device lead frame

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593643B1 (en) * 1999-04-08 2003-07-15 Shinko Electric Industries Co., Ltd. Semiconductor device lead frame
EP1281789A1 (en) * 2001-07-31 2003-02-05 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) A plated copper alloy material and process for production thereof
US6759142B2 (en) 2001-07-31 2004-07-06 Kobe Steel Ltd. Plated copper alloy material and process for production thereof
US6939621B2 (en) 2001-07-31 2005-09-06 Kobe Steel, Ltd. Plated copper alloy material and process for production thereof

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