JPS6149450A - 半導体用リ−ドフレ−ム - Google Patents

半導体用リ−ドフレ−ム

Info

Publication number
JPS6149450A
JPS6149450A JP59172048A JP17204884A JPS6149450A JP S6149450 A JPS6149450 A JP S6149450A JP 59172048 A JP59172048 A JP 59172048A JP 17204884 A JP17204884 A JP 17204884A JP S6149450 A JPS6149450 A JP S6149450A
Authority
JP
Japan
Prior art keywords
layer
alloy
copper
lead frame
alloy layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59172048A
Other languages
English (en)
Inventor
Osamu Yoshioka
修 吉岡
Ryozo Yamagishi
山岸　良三
Norio Okabe
則夫 岡部
Hideaki Sato
英昭 里
Sadao Nagayama
長山　定夫
Yoshiaki Wakashima
若島　喜昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Hitachi Ltd
Original Assignee
Hitachi Cable Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd, Hitachi Ltd filed Critical Hitachi Cable Ltd
Priority to JP59172048A priority Critical patent/JPS6149450A/ja
Publication of JPS6149450A publication Critical patent/JPS6149450A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明はＩＣ等半導体装置に用いられる半導体用リード
フレームに関する。
［従来の技術］ 一般に樹脂をモールドしてなるＩＣパッケージを製造す
る場合、例えばＳｉチップからなる半導体素子をリード
フレームに接合するペレットボンディングおよびＳｉチ
ップとリードフレームとを金の極細線等で配線するワイ
ヤボンディングを行なう。そしてこれらの配線部に樹脂
をモールドしてＩＣパッケージを製造する。リードフレ
ーム材には、アンバー（Ｆｅ　−３６％Ｎｉ）、コバー
ル（Ｆｅ、、−２９％Ｎｔ−１９％Ｃｏ）、４２７０イ
（Ｆｅ−４２％Ｎｉ＞などの鉄系合金材が主に使用され
るが、これらの材料は比較的高価であることから、最近
はより安価な銅または銅合金材が使用されるようになっ
てきている。
一方リードフレームには、ペレットボンディングおよび
ワイヤボンディング時に安定した接合を得るため、一般
にめっき等により表面に銀層が設けられるが、貴金属の
量を減らす意味から最近はこの銀層をリードフレームの
必要部分く半導体素子固定部および内部リード端子部）
にのみ設けることが行なわれている。しかし、このため
、銅または銅合金材からなるリードフレームの場合、ペ
レットボンディング、ワイヤボンディングおよび樹脂モ
ールド時にそれぞれ熱処理を受けると、銀層て覆われた
部分以外の銅面において酸化が進行し、脆い酸化膜が形
成される。銅の酸化膜は、銅素地との密着性が弱く、こ
のため樹脂をモールドした場合湿気（水分）がすき間を
通って浸入し、半導体素子表面の配線を腐食しやすくす
る欠点がある。
この欠点を改良するため、銅表面に防錆効果を有するＮ
ｉ層を設けて銅の酸化を防止した構造のリードフレーム
が提案されている。（特開昭５４−３４７６０）Ｌかし
、一般にＩ−Ｃパッケージは電子機器に組み込む際の接
合性を確保するため、リードフレームの外部リード端子
部に溶融半田あるいは錫めっき層を設けるが、前記リー
ドフレームによれば、Ｎｉ層がその表面に強固な酸化膜
を形成するため、外部リード端子部の溶融半田ぬれ性を
低下させる欠点がある。そこで、さらに前記Ｎｉ層を半
田ぬれ性の良好なＮｉ−Ｓｎ合金層に替えたり、Ｎｉ層
上にＮｉ　−Ｓｎ合金層を設けた構造のリードフレーム
が提案されている。（特開昭５４−８１７７７） ［発明が解決しようとする問題点コ しかしながら、前記リードフレームによれば、Ｎｉ−Ｓ
ｎ合金層は銀との密着性が悪く、特にめっきによる銀層
が剥離しやすい欠点がある。また、ＩＣパッケージを低
温長時間劣化すると、銅とＮｉまたはＮｉ−’Ｓｎ合金
との間に脆い金属間化合物が成長し、これが原因となっ
て曲げ等の加工が加わることにより外部リード端子部の
半田あるいは錫めっき層が剥離しやすい欠点があること
が分かった。
本発明の目的は、前記した従来技術の欠点を解消し、銀
層および半田または銀めっき層との接合性を改良するこ
とにより著しく信頼性に優れたＩＣパッケージを製造す
ることができる半導体用リードフレームを提供すること
にある。
［問題を解決するための手段］ 上記目的を達成するため、本発明のリードフレームは、
銅または銅合金からなる金属基体上にＢまたはＰを含有
するＮ１合金層を下地層として設けた後、Ｎｉ−Ｓｎ合
金またはＣｏ−Ｓｎ合金層を設け、次いで半導体素子固
定部および半導体素子と金属線で配線される内部リード
端子部に銅または銅合金層、および銀層を順次設けたも
のである。
［作用］ 上記において、ＢまたはＰを含有するＮｉ合金層は普通
電気めっきまたは化学めっきにより設ける。その組成は
、Ｐを含有するＮｉ合金層の場合は、Ｐの含有量は０．
３〜１５重量％、通常は約８重量％である。また、Ｂを
含有するＮｉ合金層の場合は、Ｂの含有量は０．１〜３
重量％、通常は約０．３重量％である。Ｂ、Ｐ以外には
、ＣＯ２Ｆｅ。
Ｓｎ、Ｗなどの元素を含有しても良い。このようにＢま
たはＰを含有するＮｉ合金層は、低温長時間劣化しても
金属基体である銅または銅合金との間に脆い金属間化合
物を生成せず、前記鋼または銅合金およびＮｉ　−Ｓｎ
合金またはＣｏ−Ｓｎ合金層とそれぞれ緊密に接合する
。また、溶融半日または錫に対するぬれ性もきわめて良
好である。
上記において、銅または銅合金層は、Ｎｉ−ＧＯ合金ま
たはＣ０−Ｓｎ含金層と銀層との間に存在して両金属と
容易に接着しやすいため、接着剤的な効果を発揮して銀
層の接合性、特に接合強度を著しく改善する。
Ｎｉ−Ｓｎ合金またはＧＯ−Ｓｎ合金は、Ｎｉよりも半
田付性に優れた耐食性の合金であり、そして何よりも樹
脂との密着性に優れた合金である。
［実施例］ 次に添付図面を参照し、本発明半導体用リードフレーム
の実施例を説明する。
第２図はプレスにより所望のパターンに打抜かれたＩＣ
リードフレームの平面図、第１図はペレットボンディン
グおよびワイヤボンディング後のＩＣリードフレームの
一部断面図である。
第１図によれば、銅合金からなる金属基体１上にその全
表面にｐ−Ｎ＋合金層１１を下地層として設けた後、Ｎ
ｉ−Ｓｎ合金層２を設ける。そして、半導体素子固定部
７および３ｉペレツトの半導体素子４とＡＩＪ線５で配
線される内部リード端子部８に、それぞれ銅層１２を中
間層として設けた後、銀層３を表面に設ける。このあと
ＩＣパッケージを製造する場合は、第３図のように配線
部を樹脂モールド２１して製造する。なお、６は半導体
素子４をペレットボンディングするために使用されるＡ
Ｑペースト等のロウ材である。
この第１図の構造のリードフレームについて具体例を説
明すると、厚さ０，２５４．の銅合金からなる金属基体
１上に、Ｐ−Ｎｉ合金めつき浴（亜リン酸含有電気Ｐ−
Ｎｉめっき浴）を用いた電気めっき法により厚さ１μの
Ｐ−Ｎｉ合金層１１を設け、ざらにＮｉ　−８μ合金め
つき浴（ビロリン酸浴）を用いた電気めっき法により厚
さ０゜５μのＮｉ−８μ合金層２を設ける。次に、半導
体素子固定部７および内部リード端子部８に、それぞれ
シアン化銅めっき浴を用いた電気めっき法により厚さ０
．１μの銅層１２を設けた後、この銅層１２の上にシア
ン化銀めっき浴を用いた電気めっき法により厚さ３μの
銀層３を設ける。最後にシアン浴中で陽極的に余分、な
銅層１２を溶解除去して、（リードフレームを作成する
。
一方、ここで上記実施例と比較するため、従来例に係る
リードフレームを作成したので、これを第３図を用いて
説明する。すなわち、第３図において、銅合金からなる
金属基体１上に電気めっきによりその全表面にＮｉ−８
μ合金層２を設け、このＮｉ−８μ合金層２上に電気め
っきにより部分的に銀層３を設けてリードフレームを作
成した。
第３図ではさらにロウ材６を用いて半導体素子４を半導
体素子固定部７にベレットボンディングし、前記半導体
素子４と内部リード端子部８の銀層３をＡｕ線５で配線
し、これらの配線部を樹脂モールド２１してＩＣパッケ
ージを製造した。
ここで、上記実施例に係るリードフレームと従来例に係
るリードフレームの特性を比較するため、それぞれ次の
方法により評価を行ない結果を表に示した。
イ、リードフレームを大気中４００″ＣＸ２分間加熱劣
化後、粘着テープビーリング法により銀層３の密着性を
調べた。判定は、Ｏが剥離せず、×が剥離したである。
口、樹脂モールド２１により封止した後、外部端子部９
にこれを曲げて溶融半田めっき層を設けたＩＣパッケー
ジを大気中１５０°ＣＸ１００〜５００ｈｒ加熱劣化し
、再び外部リード端子部９を曲げて前記半田めっき層が
剥離するか否かを調べると共に、金属間化合物の成長の
有無を確認した。判定は、Ｏが半田めっき層剥離せず、
△が半田めっき層一層剥離、×が半田めっき層剥離した
である。
ハ、大気中４００℃×２分間加熱後のリードフレームを
樹脂モールドし、リードフレームと樹脂との密着性を引
張強さをもって調べた。判定は、○は引張強さ７に’ｊ
ｆ／ｃｒ１以上で密着性良好、△が引張強さ７〜５Ｋｇ
ｆ／ｃｒＪで密着性やや良、Ｘが引張強さ５に９ｆ／ｃ
Ｍ未満で密着性が不良である。
［発明の効果］ 以上のように、本発明の半導体用リードフレームによれ
ば、Ｎｉ−Ｓｎ合金はＣｏ−８ｌ１合金層の下地層とし
てＢまたはＰを含有するＮｉ層を設け、ざらにＮｉ−Ｓ
ｎ合金またはＣｏ−Ｓｎ合金層と銀層との間に銅または
銅合金層を中間層として設けたから、上記表からも明ら
かなように従来のリードフレームと比較して高温短Ｒ間
または低温短時間加熱劣化後の特性の低下が著しく少な
く、銀層の密着性、半田の剥離強度および樹脂との密着
性を改善することによりＩＣ等のパッケージの信頼性を
著しく向上させることができる。
【図面の簡単な説明】
第１図は本発明の一実施例に係る半導体用リードフレー
ムの一部断面図、第２図は半導体用り一ドフレームの平
面図、第３図は従来例に係るＩＣパッケージの一部断面
図である。 １；金属基体、２：１−Ｓｎ合金層、３；銀層、４：半
導体素子、５；Ａｕ線、６；ロウ材、７；半導体素子固
定部、８：内部り〜ド端子部、９；外部リード端子部、
１１；Ｐ−Ｎ合金層、１２；銅層、２１；樹脂モールド
・。

Claims (1)

    【特許請求の範囲】
  1. （１）銅または銅合金からなる金属基体上にＢまたはＰ
    を含有するＮｉ合金層を下地層として設けた後、Ｎｉ−
    Ｓｎ合金またはＣｏ−Ｓｎ合金層を設け、次いで半導体
    素子固定部および半導体素子と金属線で配線される内部
    リード端子部に銅または銅合金層、および銀層を順次設
    けてなることを特徴とする半導体用リードフレーム。
JP59172048A 1984-08-17 1984-08-17 半導体用リ−ドフレ−ム Pending JPS6149450A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59172048A JPS6149450A (ja) 1984-08-17 1984-08-17 半導体用リ−ドフレ−ム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172048A JPS6149450A (ja) 1984-08-17 1984-08-17 半導体用リ−ドフレ−ム

Publications (1)

Publication Number Publication Date
JPS6149450A true JPS6149450A (ja) 1986-03-11

Family

ID=15934565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59172048A Pending JPS6149450A (ja) 1984-08-17 1984-08-17 半導体用リ−ドフレ−ム

Country Status (1)

Country Link
JP (1) JPS6149450A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077116A (ja) * 1993-06-19 1995-01-10 Riidomitsuku Kk 半導体装置用リードフレーム
US5704494A (en) * 1995-06-16 1998-01-06 Nihon Plast Co., Ltd. Disc holder
US5782361A (en) * 1995-06-26 1998-07-21 Kakizaki Manufacturing Co., Ltd. Thin-plate supporting container
US6613451B1 (en) * 1998-09-11 2003-09-02 Nippon Mining & Metals Co., Ltd. Metallic material
US6696753B2 (en) 2002-05-17 2004-02-24 Denso Corporation Enhancement of wire bondability in semiconductor device package
DE4313980B4 (de) * 1992-04-28 2005-08-04 Denso Corp., Kariya Integrierte Hybridschaltung und Verfahren zu deren Herstellung
JP2016025244A (ja) * 2014-07-22 2016-02-08 Ｓｈマテリアル株式会社 リードフレーム及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4313980B4 (de) * 1992-04-28 2005-08-04 Denso Corp., Kariya Integrierte Hybridschaltung und Verfahren zu deren Herstellung
JPH077116A (ja) * 1993-06-19 1995-01-10 Riidomitsuku Kk 半導体装置用リードフレーム
US5704494A (en) * 1995-06-16 1998-01-06 Nihon Plast Co., Ltd. Disc holder
US5782361A (en) * 1995-06-26 1998-07-21 Kakizaki Manufacturing Co., Ltd. Thin-plate supporting container
US6613451B1 (en) * 1998-09-11 2003-09-02 Nippon Mining & Metals Co., Ltd. Metallic material
US6696753B2 (en) 2002-05-17 2004-02-24 Denso Corporation Enhancement of wire bondability in semiconductor device package
JP2016025244A (ja) * 2014-07-22 2016-02-08 Ｓｈマテリアル株式会社 リードフレーム及びその製造方法

Similar Documents

Publication Publication Date Title
US4707724A (en) Semiconductor device and method of manufacturing thereof
US7608916B2 (en) Aluminum leadframes for semiconductor QFN/SON devices
JPH08111484A (ja) リードフレーム
EP1037277B1 (en) Lead frame and method of fabricating a lead frame
US6933177B2 (en) Aluminum leadframes for semiconductor devices and method of fabrication
JPS6149450A (ja) 半導体用リ−ドフレ−ム
US6838757B2 (en) Preplating of semiconductor small outline no-lead leadframes
US20040183166A1 (en) Preplated leadframe without precious metal
JP2797846B2 (ja) 樹脂封止型半導体装置のＣｕ合金製リードフレーム材
KR100378489B1 (ko) 은 또는 은 합금도금을 이용한 반도체 패키지용 리드프레임 및 그 제조방법
JPS61140160A (ja) 半導体用リ−ドフレ−ム
JPS6142941A (ja) 半導体用リ−ドフレ−ム
JPS59149042A (ja) 半導体用リ−ドフレ−ム
JPS60147146A (ja) 半導体用リ−ドフレ−ム
JPS6353287A (ja) Ａｇ被覆導体
JPS63187655A (ja) 電子部品用リ−ドフレ−ム
JPS639957A (ja) 半導体リ−ドフレ−ム
JPS6214452A (ja) 半導体用リ−ドフレ−ム
JPH0558259B2 (ja)
JPS5916354A (ja) 半導体装置用リ−ドフレ−ム
JP2537301B2 (ja) 電子部品の製造方法
JPS6178150A (ja) 樹脂封止型半導体装置用リ−ドフレ−ム
JPS6180844A (ja) 半導体リ−ドフレ−ム用条材
JPS62104059A (ja) 半導体装置
JPS60201651A (ja) 半導体用リ−ドフレ−ム