JPS60145593A - 半導体メモリ用センス回路 - Google Patents

半導体メモリ用センス回路

Info

Publication number
JPS60145593A
JPS60145593A JP59000576A JP57684A JPS60145593A JP S60145593 A JPS60145593 A JP S60145593A JP 59000576 A JP59000576 A JP 59000576A JP 57684 A JP57684 A JP 57684A JP S60145593 A JPS60145593 A JP S60145593A
Authority
JP
Japan
Prior art keywords
transistor
memory cell
voltage
gate
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59000576A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0467278B2 (enrdf_load_stackoverflow
Inventor
Shinji Saito
伸二 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59000576A priority Critical patent/JPS60145593A/ja
Publication of JPS60145593A publication Critical patent/JPS60145593A/ja
Publication of JPH0467278B2 publication Critical patent/JPH0467278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP59000576A 1984-01-06 1984-01-06 半導体メモリ用センス回路 Granted JPS60145593A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59000576A JPS60145593A (ja) 1984-01-06 1984-01-06 半導体メモリ用センス回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59000576A JPS60145593A (ja) 1984-01-06 1984-01-06 半導体メモリ用センス回路

Publications (2)

Publication Number Publication Date
JPS60145593A true JPS60145593A (ja) 1985-08-01
JPH0467278B2 JPH0467278B2 (enrdf_load_stackoverflow) 1992-10-27

Family

ID=11477534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59000576A Granted JPS60145593A (ja) 1984-01-06 1984-01-06 半導体メモリ用センス回路

Country Status (1)

Country Link
JP (1) JPS60145593A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003085967A (ja) * 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置の読み出し回路
JP2003085966A (ja) * 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置の読み出し回路
JP2010020846A (ja) * 2008-07-11 2010-01-28 Sanyo Electric Co Ltd 半導体記憶装置の読み出し回路
JP2012074900A (ja) * 2010-09-28 2012-04-12 Toshiba Corp ルックアップテーブル回路およびフィールドプログラマブルゲートアレイ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003085967A (ja) * 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置の読み出し回路
JP2003085966A (ja) * 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置の読み出し回路
JP2010020846A (ja) * 2008-07-11 2010-01-28 Sanyo Electric Co Ltd 半導体記憶装置の読み出し回路
JP2012074900A (ja) * 2010-09-28 2012-04-12 Toshiba Corp ルックアップテーブル回路およびフィールドプログラマブルゲートアレイ

Also Published As

Publication number Publication date
JPH0467278B2 (enrdf_load_stackoverflow) 1992-10-27

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term