JPS60144933A - 液相成長装置 - Google Patents

液相成長装置

Info

Publication number
JPS60144933A
JPS60144933A JP60384A JP60384A JPS60144933A JP S60144933 A JPS60144933 A JP S60144933A JP 60384 A JP60384 A JP 60384A JP 60384 A JP60384 A JP 60384A JP S60144933 A JPS60144933 A JP S60144933A
Authority
JP
Japan
Prior art keywords
solution
slider
source
wafer
solute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60384A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464174B2 (enrdf_load_stackoverflow
Inventor
Yasuo Shinohara
篠原 庸雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP60384A priority Critical patent/JPS60144933A/ja
Publication of JPS60144933A publication Critical patent/JPS60144933A/ja
Publication of JPH0464174B2 publication Critical patent/JPH0464174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02392Phosphides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02625Liquid deposition using melted materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP60384A 1984-01-06 1984-01-06 液相成長装置 Granted JPS60144933A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60384A JPS60144933A (ja) 1984-01-06 1984-01-06 液相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60384A JPS60144933A (ja) 1984-01-06 1984-01-06 液相成長装置

Publications (2)

Publication Number Publication Date
JPS60144933A true JPS60144933A (ja) 1985-07-31
JPH0464174B2 JPH0464174B2 (enrdf_load_stackoverflow) 1992-10-14

Family

ID=11478305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60384A Granted JPS60144933A (ja) 1984-01-06 1984-01-06 液相成長装置

Country Status (1)

Country Link
JP (1) JPS60144933A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840806A (enrdf_load_stackoverflow) * 1971-09-21 1973-06-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840806A (enrdf_load_stackoverflow) * 1971-09-21 1973-06-15

Also Published As

Publication number Publication date
JPH0464174B2 (enrdf_load_stackoverflow) 1992-10-14

Similar Documents

Publication Publication Date Title
US4689109A (en) String stabilized ribbon growth a method for seeding same
JPS60144933A (ja) 液相成長装置
Nishinaga et al. Studies of LPE ripple based on morphological stability theory
JPH0217519B2 (enrdf_load_stackoverflow)
EP0090521B1 (en) A method of performing solution growth of a group iii-v compound semiconductor crystal layer under control of the conductivity type thereof
JP2932787B2 (ja) 化合物半導体ウェハの製造方法
JPS5742598A (en) Liquid-phase epitaxial growing method
van Oirschot et al. LPE growth of DH laser structures with the double source method
JPH0431385A (ja) 結晶成長装置
JPS61181124A (ja) 液相成長方法
JPH01246193A (ja) 液相エピタキシャル成長装置
JPS6066423A (ja) 液相エピタキシャル成長方法
JPS5623738A (en) Manufacture of semiconductor element having buried layer
Lourenco On the dissolution of InGaAsP (λ> 1.3 μm) and InGaAs layers by In-P melts
JPS59225518A (ja) 液相エピタキシヤル成長方法
JPS60192339A (ja) 液相エピタキシヤル成長方法
Chang et al. Distribution coefficient of P for growth of Ga1− x Al x As1− y P y by LPE, determined using Auger spectroscopy
JPS5776828A (en) Manufacture of semiconductor device
JPS57155727A (en) Manufacture of semiconductor device
JPS5732620A (en) Method for liquid-phase epitaxial growth and growing boat
JPS6452697A (en) Production of group iii-v compound semiconductor single crystal
JPH0361636B2 (enrdf_load_stackoverflow)
JPS57181186A (en) Semiconductor light emission device
JPS535966A (en) Device for effecting liquid-phase epitaxial growth
JPS61291488A (ja) 液相エピタキシヤル成長方法およびそれに使用する装置