JPS60143625A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60143625A
JPS60143625A JP24821583A JP24821583A JPS60143625A JP S60143625 A JPS60143625 A JP S60143625A JP 24821583 A JP24821583 A JP 24821583A JP 24821583 A JP24821583 A JP 24821583A JP S60143625 A JPS60143625 A JP S60143625A
Authority
JP
Japan
Prior art keywords
coil
reaction tube
tube
film thickness
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24821583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0475650B2 (enExample
Inventor
Ichiro Kato
一郎 加藤
Takashi Ito
隆司 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP24821583A priority Critical patent/JPS60143625A/ja
Publication of JPS60143625A publication Critical patent/JPS60143625A/ja
Publication of JPH0475650B2 publication Critical patent/JPH0475650B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP24821583A 1983-12-30 1983-12-30 半導体装置の製造方法 Granted JPS60143625A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24821583A JPS60143625A (ja) 1983-12-30 1983-12-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24821583A JPS60143625A (ja) 1983-12-30 1983-12-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60143625A true JPS60143625A (ja) 1985-07-29
JPH0475650B2 JPH0475650B2 (enExample) 1992-12-01

Family

ID=17174890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24821583A Granted JPS60143625A (ja) 1983-12-30 1983-12-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60143625A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683025A (en) * 1979-12-10 1981-07-07 Shunpei Yamazaki Formation of single crystal semiconductor film
JPS5719034A (en) * 1980-07-09 1982-02-01 Fujitsu Ltd Vapor growth apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683025A (en) * 1979-12-10 1981-07-07 Shunpei Yamazaki Formation of single crystal semiconductor film
JPS5719034A (en) * 1980-07-09 1982-02-01 Fujitsu Ltd Vapor growth apparatus

Also Published As

Publication number Publication date
JPH0475650B2 (enExample) 1992-12-01

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