JPS60141606A - テルル化カドミウム粉末の製造法 - Google Patents

テルル化カドミウム粉末の製造法

Info

Publication number
JPS60141606A
JPS60141606A JP24901883A JP24901883A JPS60141606A JP S60141606 A JPS60141606 A JP S60141606A JP 24901883 A JP24901883 A JP 24901883A JP 24901883 A JP24901883 A JP 24901883A JP S60141606 A JPS60141606 A JP S60141606A
Authority
JP
Japan
Prior art keywords
powder
temp
calcination
temperature
crushed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24901883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6218481B2 (enExample
Inventor
Kenzo Mori
毛利　憲三
Takeo Akiyoshi
秋吉　猛雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP24901883A priority Critical patent/JPS60141606A/ja
Publication of JPS60141606A publication Critical patent/JPS60141606A/ja
Publication of JPS6218481B2 publication Critical patent/JPS6218481B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacture And Refinement Of Metals (AREA)
JP24901883A 1983-12-27 1983-12-27 テルル化カドミウム粉末の製造法 Granted JPS60141606A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24901883A JPS60141606A (ja) 1983-12-27 1983-12-27 テルル化カドミウム粉末の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24901883A JPS60141606A (ja) 1983-12-27 1983-12-27 テルル化カドミウム粉末の製造法

Publications (2)

Publication Number Publication Date
JPS60141606A true JPS60141606A (ja) 1985-07-26
JPS6218481B2 JPS6218481B2 (enExample) 1987-04-23

Family

ID=17186778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24901883A Granted JPS60141606A (ja) 1983-12-27 1983-12-27 テルル化カドミウム粉末の製造法

Country Status (1)

Country Link
JP (1) JPS60141606A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664493B2 (en) 2001-12-18 2003-12-16 Hitachi, Ltd. Gas-insulated switchgear
JP2008172958A (ja) * 2007-01-12 2008-07-24 Toshiba Corp ガス絶縁開閉装置
CN103420346A (zh) * 2012-05-22 2013-12-04 广东先导稀材股份有限公司 碲化镉的制备方法
CN104014284A (zh) * 2014-06-04 2014-09-03 四川大学 Iib-via族化合物粉末的自由降落高温合成方法及合成装置
CN104016312A (zh) * 2014-06-04 2014-09-03 四川大学 一种iib-via族化合物粉末的合成方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664493B2 (en) 2001-12-18 2003-12-16 Hitachi, Ltd. Gas-insulated switchgear
JP2008172958A (ja) * 2007-01-12 2008-07-24 Toshiba Corp ガス絶縁開閉装置
CN103420346A (zh) * 2012-05-22 2013-12-04 广东先导稀材股份有限公司 碲化镉的制备方法
CN103420346B (zh) * 2012-05-22 2015-02-04 广东先导稀材股份有限公司 碲化镉的制备方法
CN104014284A (zh) * 2014-06-04 2014-09-03 四川大学 Iib-via族化合物粉末的自由降落高温合成方法及合成装置
CN104016312A (zh) * 2014-06-04 2014-09-03 四川大学 一种iib-via族化合物粉末的合成方法

Also Published As

Publication number Publication date
JPS6218481B2 (enExample) 1987-04-23

Similar Documents

Publication Publication Date Title
TWI459409B (zh) 用於磁冷卻或熱泵之以金屬為主之材料的製造方法
CN100489131C (zh) 难变形纯铼片的制造方法
CN109796209B (zh) 一种(Ti, Zr, Hf, Ta, Nb)B2高熵陶瓷粉体及其制备方法
JPS5814391B2 (ja) セラミツク材料の製造方法
CN111809240A (zh) 一种高纯碲化镉的制备方法
CN117229056B (zh) 一种高介电铝掺杂型钙钛矿结构高熵微波介质陶瓷及其制备方法
CN114150375A (zh) 一种磁控共溅射制备Fe-Sn-Se-Te四元薄膜的方法
EP1547974A1 (en) Iron silicide powder and method for production thereof
JPS60141606A (ja) テルル化カドミウム粉末の製造法
CN114672740B (zh) 钇-铁基储氢合金、电池及制备方法
CN115522086A (zh) 一种NiCr合金靶材制备方法
CN113184924B (zh) 一种固相插层法制备高熵层状化合物的方法
CN112251722B (zh) 一种制备铜铟镓硒(cigs)或铜铟铝硒(cias)四元靶材的方法
CN114956823A (zh) 一种导电碲化镉靶材的制备方法
JPH10330169A (ja) セラミックス焼結体の製造方法
CN115849909B (zh) 铜铟镓硒靶材及其制备方法和太阳能电池
JPS61222910A (ja) セレン化亜鉛ドーパント用高純度セレン化銅粉末の製造方法
CN110845229B (zh) LaBiO3薄膜、LaBiO3陶瓷靶材及其制备方法
CN107190198A (zh) 一种β‑Mn相的三元素CoZnFe合金及其制备方法
CN114686775B (zh) Ab3型含钇储氢合金、电池及制备方法
CN115259854B (zh) 一种半导体α-GeTe靶材及其制备方法
JPH0238659B2 (enExample)
CN104860272A (zh) 一种快速制备高纯碲化镉粉末的新方法
CN114672721B (zh) 非化学计量比稀土-铁基储氢合金及制备方法和应用
JPS60137808A (ja) セレン化亜鉛粉末の製造法