JPS60140723A - ドライエッチング方法 - Google Patents

ドライエッチング方法

Info

Publication number
JPS60140723A
JPS60140723A JP24522783A JP24522783A JPS60140723A JP S60140723 A JPS60140723 A JP S60140723A JP 24522783 A JP24522783 A JP 24522783A JP 24522783 A JP24522783 A JP 24522783A JP S60140723 A JPS60140723 A JP S60140723A
Authority
JP
Japan
Prior art keywords
cooling
electrode
temperature
side electrode
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24522783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0363806B2 (enrdf_load_stackoverflow
Inventor
Jun Kanamori
金森　順
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP24522783A priority Critical patent/JPS60140723A/ja
Publication of JPS60140723A publication Critical patent/JPS60140723A/ja
Publication of JPH0363806B2 publication Critical patent/JPH0363806B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP24522783A 1983-12-28 1983-12-28 ドライエッチング方法 Granted JPS60140723A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24522783A JPS60140723A (ja) 1983-12-28 1983-12-28 ドライエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24522783A JPS60140723A (ja) 1983-12-28 1983-12-28 ドライエッチング方法

Publications (2)

Publication Number Publication Date
JPS60140723A true JPS60140723A (ja) 1985-07-25
JPH0363806B2 JPH0363806B2 (enrdf_load_stackoverflow) 1991-10-02

Family

ID=17130537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24522783A Granted JPS60140723A (ja) 1983-12-28 1983-12-28 ドライエッチング方法

Country Status (1)

Country Link
JP (1) JPS60140723A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163030A (ja) * 1984-08-20 1986-04-01 Kokusai Electric Co Ltd プラズマエッチング装置の電極温度制御方法
JPS6310522A (ja) * 1986-07-02 1988-01-18 Sony Corp ドライエツチング方法
JPS63284820A (ja) * 1987-05-15 1988-11-22 Fujitsu Ltd ドライエッチング装置
JPH04180222A (ja) * 1990-11-15 1992-06-26 Anelva Corp エッチング方法および装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method
JPS5853833A (ja) * 1981-09-26 1983-03-30 Toshiba Corp プラズマエツチング装置
JPS58153332A (ja) * 1982-03-08 1983-09-12 Mitsubishi Electric Corp ドライエツチング装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method
JPS5853833A (ja) * 1981-09-26 1983-03-30 Toshiba Corp プラズマエツチング装置
JPS58153332A (ja) * 1982-03-08 1983-09-12 Mitsubishi Electric Corp ドライエツチング装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163030A (ja) * 1984-08-20 1986-04-01 Kokusai Electric Co Ltd プラズマエッチング装置の電極温度制御方法
JPS6310522A (ja) * 1986-07-02 1988-01-18 Sony Corp ドライエツチング方法
JPS63284820A (ja) * 1987-05-15 1988-11-22 Fujitsu Ltd ドライエッチング装置
JPH04180222A (ja) * 1990-11-15 1992-06-26 Anelva Corp エッチング方法および装置

Also Published As

Publication number Publication date
JPH0363806B2 (enrdf_load_stackoverflow) 1991-10-02

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term