JPS60136328A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS60136328A JPS60136328A JP58243817A JP24381783A JPS60136328A JP S60136328 A JPS60136328 A JP S60136328A JP 58243817 A JP58243817 A JP 58243817A JP 24381783 A JP24381783 A JP 24381783A JP S60136328 A JPS60136328 A JP S60136328A
- Authority
- JP
- Japan
- Prior art keywords
- shape
- grooves
- groove
- depression
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W10/00—
-
- H10W10/01—
Landscapes
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58243817A JPS60136328A (ja) | 1983-12-26 | 1983-12-26 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58243817A JPS60136328A (ja) | 1983-12-26 | 1983-12-26 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60136328A true JPS60136328A (ja) | 1985-07-19 |
| JPH0562464B2 JPH0562464B2 (OSRAM) | 1993-09-08 |
Family
ID=17109365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58243817A Granted JPS60136328A (ja) | 1983-12-26 | 1983-12-26 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60136328A (OSRAM) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01187944A (ja) * | 1987-11-23 | 1989-07-27 | Texas Instr Inc <Ti> | 半導体材料に隔離構造を形成する方法 |
| US5094973A (en) * | 1987-11-23 | 1992-03-10 | Texas Instrument Incorporated | Trench pillar for wafer processing |
| US5448102A (en) * | 1993-06-24 | 1995-09-05 | Harris Corporation | Trench isolation stress relief |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5384692A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Semiconductor device |
| JPS5643171U (OSRAM) * | 1979-09-10 | 1981-04-20 | ||
| JPS58168256A (ja) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | 半導体装置 |
-
1983
- 1983-12-26 JP JP58243817A patent/JPS60136328A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5384692A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Semiconductor device |
| JPS5643171U (OSRAM) * | 1979-09-10 | 1981-04-20 | ||
| JPS58168256A (ja) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | 半導体装置 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01187944A (ja) * | 1987-11-23 | 1989-07-27 | Texas Instr Inc <Ti> | 半導体材料に隔離構造を形成する方法 |
| US5094973A (en) * | 1987-11-23 | 1992-03-10 | Texas Instrument Incorporated | Trench pillar for wafer processing |
| US5448102A (en) * | 1993-06-24 | 1995-09-05 | Harris Corporation | Trench isolation stress relief |
| US5683075A (en) * | 1993-06-24 | 1997-11-04 | Harris Corporation | Trench isolation stress relief |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0562464B2 (OSRAM) | 1993-09-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4635090A (en) | Tapered groove IC isolation | |
| US5227658A (en) | Buried air dielectric isolation of silicon islands | |
| EP0091507B1 (en) | Method of manufacturing a semi-conductor device comprising dielectric isolation regions | |
| JPH0648707B2 (ja) | 半導体構造及びその製造方法 | |
| JPS631753B2 (OSRAM) | ||
| US4656054A (en) | Method of manufacturing a semiconductor device involving a capacitor | |
| JPS60136328A (ja) | 半導体装置 | |
| KR900007149B1 (ko) | 반도체 장치 | |
| JPH04333257A (ja) | 誘電体分離ウエハの製造方法 | |
| JPH05849B2 (OSRAM) | ||
| JPS6080244A (ja) | 半導体装置の素子分離方法 | |
| JPH043455A (ja) | Soiトランジスタ積層半導体装置とその製造方法 | |
| JPS60241230A (ja) | 半導体装置 | |
| JP2666427B2 (ja) | 半導体装置の製造方法 | |
| JPH01258439A (ja) | 半導体装置およびその製造方法 | |
| JPH0522390B2 (OSRAM) | ||
| JPS63299142A (ja) | 多層配線構造を有する半導体装置の製造方法 | |
| JPH04390B2 (OSRAM) | ||
| JPS60161632A (ja) | 半導体装置及びその製造方法 | |
| JP3413697B2 (ja) | 配線形成方法 | |
| JPH03276727A (ja) | 半導体集積回路装置 | |
| JPH03151638A (ja) | 半導体集積回路の製造方法 | |
| JPS61134035A (ja) | 半導体装置 | |
| JPS63208239A (ja) | 半導体装置の製造法 | |
| JPH03198362A (ja) | 半導体装置の製造方法 |