JPS60131898A - 薄いフエリ磁性単結晶ガーネツト層の製造方法 - Google Patents

薄いフエリ磁性単結晶ガーネツト層の製造方法

Info

Publication number
JPS60131898A
JPS60131898A JP59253928A JP25392884A JPS60131898A JP S60131898 A JPS60131898 A JP S60131898A JP 59253928 A JP59253928 A JP 59253928A JP 25392884 A JP25392884 A JP 25392884A JP S60131898 A JPS60131898 A JP S60131898A
Authority
JP
Japan
Prior art keywords
layer
substrate
composition
target
garnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59253928A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0377158B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
ボルカー・ドールマン
イエンス‐ペーター・クルンネ
ライナー・エカルト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS60131898A publication Critical patent/JPS60131898A/ja
Publication of JPH0377158B2 publication Critical patent/JPH0377158B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Compounds Of Iron (AREA)
JP59253928A 1983-12-03 1984-11-30 薄いフエリ磁性単結晶ガーネツト層の製造方法 Granted JPS60131898A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3343768.8 1983-12-03
DE19833343768 DE3343768A1 (de) 1983-12-03 1983-12-03 Verfahren zur herstellung duenner einkristalliner ferrimagnetischer granatschichten durch kathodenzerstaeubung

Publications (2)

Publication Number Publication Date
JPS60131898A true JPS60131898A (ja) 1985-07-13
JPH0377158B2 JPH0377158B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-09

Family

ID=6215959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59253928A Granted JPS60131898A (ja) 1983-12-03 1984-11-30 薄いフエリ磁性単結晶ガーネツト層の製造方法

Country Status (3)

Country Link
EP (1) EP0146985B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS60131898A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE3343768A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62197395A (ja) * 1986-02-22 1987-09-01 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 基板上における構造化エピタキシヤル層の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3482886D1 (de) * 1983-11-17 1990-09-06 Nippon Sheet Glass Co Ltd Verfahren zur herstellung photothermomagnetischer aufzeichnungsfilme.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887451A (en) * 1972-12-29 1975-06-03 Ibm Method for sputtering garnet compound layer
GB1470965A (en) * 1973-04-26 1977-04-21 Mullard Ltd Magneto-optic materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62197395A (ja) * 1986-02-22 1987-09-01 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 基板上における構造化エピタキシヤル層の製造方法

Also Published As

Publication number Publication date
EP0146985A2 (de) 1985-07-03
EP0146985A3 (en) 1987-06-03
DE3484100D1 (de) 1991-03-14
EP0146985B1 (de) 1991-02-06
JPH0377158B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-09
DE3343768A1 (de) 1985-06-13

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