DE3343768A1 - Verfahren zur herstellung duenner einkristalliner ferrimagnetischer granatschichten durch kathodenzerstaeubung - Google Patents
Verfahren zur herstellung duenner einkristalliner ferrimagnetischer granatschichten durch kathodenzerstaeubungInfo
- Publication number
- DE3343768A1 DE3343768A1 DE19833343768 DE3343768A DE3343768A1 DE 3343768 A1 DE3343768 A1 DE 3343768A1 DE 19833343768 DE19833343768 DE 19833343768 DE 3343768 A DE3343768 A DE 3343768A DE 3343768 A1 DE3343768 A1 DE 3343768A1
- Authority
- DE
- Germany
- Prior art keywords
- layers
- substrate
- layer
- target
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000005293 ferrimagnetic effect Effects 0.000 title claims description 5
- 238000005507 spraying Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 31
- 239000002223 garnet Substances 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 230000005291 magnetic effect Effects 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 238000007731 hot pressing Methods 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 230000009466 transformation Effects 0.000 claims description 2
- -1 zirconium-substituted gadolinium Chemical class 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims 3
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 239000011777 magnesium Substances 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical group [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000004943 liquid phase epitaxy Methods 0.000 description 6
- 238000000889 atomisation Methods 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000002294 plasma sputter deposition Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- RDQSSKKUSGYZQB-UHFFFAOYSA-N bismuthanylidyneiron Chemical compound [Fe].[Bi] RDQSSKKUSGYZQB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
- Compounds Of Iron (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833343768 DE3343768A1 (de) | 1983-12-03 | 1983-12-03 | Verfahren zur herstellung duenner einkristalliner ferrimagnetischer granatschichten durch kathodenzerstaeubung |
| DE8484201733T DE3484100D1 (de) | 1983-12-03 | 1984-11-28 | Verfahren zur herstellung duenner einkristalliner ferrimagnetischer granatschichten durch kathodenzerstaeubung. |
| EP84201733A EP0146985B1 (de) | 1983-12-03 | 1984-11-28 | Verfahren zur Herstellung dünner einkristalliner ferrimagnetischer Granatschichten durch Kathodenzerstäubung |
| JP59253928A JPS60131898A (ja) | 1983-12-03 | 1984-11-30 | 薄いフエリ磁性単結晶ガーネツト層の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833343768 DE3343768A1 (de) | 1983-12-03 | 1983-12-03 | Verfahren zur herstellung duenner einkristalliner ferrimagnetischer granatschichten durch kathodenzerstaeubung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3343768A1 true DE3343768A1 (de) | 1985-06-13 |
Family
ID=6215959
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833343768 Withdrawn DE3343768A1 (de) | 1983-12-03 | 1983-12-03 | Verfahren zur herstellung duenner einkristalliner ferrimagnetischer granatschichten durch kathodenzerstaeubung |
| DE8484201733T Expired - Lifetime DE3484100D1 (de) | 1983-12-03 | 1984-11-28 | Verfahren zur herstellung duenner einkristalliner ferrimagnetischer granatschichten durch kathodenzerstaeubung. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8484201733T Expired - Lifetime DE3484100D1 (de) | 1983-12-03 | 1984-11-28 | Verfahren zur herstellung duenner einkristalliner ferrimagnetischer granatschichten durch kathodenzerstaeubung. |
Country Status (3)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3482886D1 (de) * | 1983-11-17 | 1990-09-06 | Nippon Sheet Glass Co Ltd | Verfahren zur herstellung photothermomagnetischer aufzeichnungsfilme. |
| DE3605793A1 (de) * | 1986-02-22 | 1987-08-27 | Philips Patentverwaltung | Verfahren zur herstellung von strukturierten epitaxialen schichten auf einem substrat |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3887451A (en) * | 1972-12-29 | 1975-06-03 | Ibm | Method for sputtering garnet compound layer |
| GB1470965A (en) * | 1973-04-26 | 1977-04-21 | Mullard Ltd | Magneto-optic materials |
-
1983
- 1983-12-03 DE DE19833343768 patent/DE3343768A1/de not_active Withdrawn
-
1984
- 1984-11-28 EP EP84201733A patent/EP0146985B1/de not_active Expired - Lifetime
- 1984-11-28 DE DE8484201733T patent/DE3484100D1/de not_active Expired - Lifetime
- 1984-11-30 JP JP59253928A patent/JPS60131898A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| EP0146985A2 (de) | 1985-07-03 |
| EP0146985A3 (en) | 1987-06-03 |
| DE3484100D1 (de) | 1991-03-14 |
| EP0146985B1 (de) | 1991-02-06 |
| JPS60131898A (ja) | 1985-07-13 |
| JPH0377158B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-12-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |