JPS60124913A - 薄膜蒸着装置 - Google Patents
薄膜蒸着装置Info
- Publication number
- JPS60124913A JPS60124913A JP23556283A JP23556283A JPS60124913A JP S60124913 A JPS60124913 A JP S60124913A JP 23556283 A JP23556283 A JP 23556283A JP 23556283 A JP23556283 A JP 23556283A JP S60124913 A JPS60124913 A JP S60124913A
- Authority
- JP
- Japan
- Prior art keywords
- clusters
- substrate
- thin film
- vapor
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23556283A JPS60124913A (ja) | 1983-12-12 | 1983-12-12 | 薄膜蒸着装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23556283A JPS60124913A (ja) | 1983-12-12 | 1983-12-12 | 薄膜蒸着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60124913A true JPS60124913A (ja) | 1985-07-04 |
JPH0443411B2 JPH0443411B2 (enrdf_load_stackoverflow) | 1992-07-16 |
Family
ID=16987824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23556283A Granted JPS60124913A (ja) | 1983-12-12 | 1983-12-12 | 薄膜蒸着装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60124913A (enrdf_load_stackoverflow) |
-
1983
- 1983-12-12 JP JP23556283A patent/JPS60124913A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0443411B2 (enrdf_load_stackoverflow) | 1992-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6353259A (ja) | 薄膜形成方法 | |
JP2501828B2 (ja) | 薄膜蒸着装置 | |
JPH089774B2 (ja) | 薄膜形成装置 | |
JPS60124913A (ja) | 薄膜蒸着装置 | |
JPH07258832A (ja) | 真空蒸着装置用電子銃およびそれを備えた真空蒸着装置 | |
JP2000144392A (ja) | 薄膜形成装置及び薄膜形成方法 | |
JPS60125368A (ja) | 薄膜蒸着装置 | |
JPS60125367A (ja) | 薄膜蒸着装置 | |
JPH0215630B2 (enrdf_load_stackoverflow) | ||
JPH0351087B2 (enrdf_load_stackoverflow) | ||
JPS60124923A (ja) | 薄膜蒸着装置 | |
JPS60124915A (ja) | 薄膜蒸着装置 | |
JPS60158617A (ja) | 薄膜蒸着装置 | |
JPS60124931A (ja) | 薄膜蒸着装置 | |
JPS60124916A (ja) | 薄膜蒸着装置 | |
JPH0215629B2 (enrdf_load_stackoverflow) | ||
JPS60124921A (ja) | 薄膜蒸着装置 | |
JPH0719746B2 (ja) | 薄膜蒸着装置 | |
JPS60124930A (ja) | 薄膜蒸着装置 | |
JPS6096759A (ja) | 薄膜蒸着装置 | |
JPH05339720A (ja) | 薄膜形成装置 | |
JPS60124914A (ja) | 薄膜蒸着装置 | |
JPS6212120A (ja) | 蒸発源加熱用フイラメント | |
JPS60124933A (ja) | 薄膜蒸着装置 | |
JP2000285838A (ja) | ガスイオン化装置 |