JPS60124817A - 気相エピタキシャル成長方法 - Google Patents

気相エピタキシャル成長方法

Info

Publication number
JPS60124817A
JPS60124817A JP58233118A JP23311883A JPS60124817A JP S60124817 A JPS60124817 A JP S60124817A JP 58233118 A JP58233118 A JP 58233118A JP 23311883 A JP23311883 A JP 23311883A JP S60124817 A JPS60124817 A JP S60124817A
Authority
JP
Japan
Prior art keywords
molybdenum
gas
substrate
single crystal
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58233118A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554254B2 (cg-RX-API-DMAC10.html
Inventor
Takaaki Kimura
記村　隆章
Hideki Yamawaki
秀樹 山脇
Shigeo Kodama
児玉　茂夫
Yoshihiro Arimoto
由弘 有本
Masaru Ihara
賢 井原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58233118A priority Critical patent/JPS60124817A/ja
Publication of JPS60124817A publication Critical patent/JPS60124817A/ja
Publication of JPH0554254B2 publication Critical patent/JPH0554254B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—
JP58233118A 1983-12-09 1983-12-09 気相エピタキシャル成長方法 Granted JPS60124817A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58233118A JPS60124817A (ja) 1983-12-09 1983-12-09 気相エピタキシャル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58233118A JPS60124817A (ja) 1983-12-09 1983-12-09 気相エピタキシャル成長方法

Publications (2)

Publication Number Publication Date
JPS60124817A true JPS60124817A (ja) 1985-07-03
JPH0554254B2 JPH0554254B2 (cg-RX-API-DMAC10.html) 1993-08-12

Family

ID=16950043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58233118A Granted JPS60124817A (ja) 1983-12-09 1983-12-09 気相エピタキシャル成長方法

Country Status (1)

Country Link
JP (1) JPS60124817A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182354A (ja) * 2009-05-19 2009-08-13 Takashi Katoda 基板上に作製された半導体光デバイスおよびその作製方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145317A (en) * 1981-03-04 1982-09-08 Toshiba Corp Manufacture of semiconductor device
JPS57178315A (en) * 1981-04-27 1982-11-02 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145317A (en) * 1981-03-04 1982-09-08 Toshiba Corp Manufacture of semiconductor device
JPS57178315A (en) * 1981-04-27 1982-11-02 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182354A (ja) * 2009-05-19 2009-08-13 Takashi Katoda 基板上に作製された半導体光デバイスおよびその作製方法

Also Published As

Publication number Publication date
JPH0554254B2 (cg-RX-API-DMAC10.html) 1993-08-12

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees