JPS57145317A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57145317A JPS57145317A JP56031046A JP3104681A JPS57145317A JP S57145317 A JPS57145317 A JP S57145317A JP 56031046 A JP56031046 A JP 56031046A JP 3104681 A JP3104681 A JP 3104681A JP S57145317 A JPS57145317 A JP S57145317A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon layer
- polycrystal
- substrate
- annealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To form a semiconductor layer of excellent quality without giving chapping on the surface of a substrate by a method wherein a polycrystal or amorphous silicon layer is attached through an energy beam reflecting film to an insulated substrate and the silicon layer is annealed by the irradiation of enery beam. CONSTITUTION:SiO2 film 102 available for insulation film is formed on the surface of a polycrystal silicon substrate 101. Successively, Mo thin film 103 is vapor-deposited to the surface of the film 102 by a vapor deposition. Subsequently, a polycrystal silicon layer 104 of 5mum thickness is coated on the film 103. The silicon layer 104 is annealed by the irradiation of the electron beam from the upper position. According to such a processing, since the electron beam is reflected at the Mo film 103, an annealing efficiency can be raised, consequently the annealing can be estalished at a low power, the unevenness on the surface also be reduced remarkably and a problem of ring-fly is hardly caused.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56031046A JPS57145317A (en) | 1981-03-04 | 1981-03-04 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56031046A JPS57145317A (en) | 1981-03-04 | 1981-03-04 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57145317A true JPS57145317A (en) | 1982-09-08 |
Family
ID=12320531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56031046A Pending JPS57145317A (en) | 1981-03-04 | 1981-03-04 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57145317A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124817A (en) * | 1983-12-09 | 1985-07-03 | Fujitsu Ltd | Vapor-phase epitaxial growth method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5312607U (en) * | 1976-07-15 | 1978-02-02 | ||
| JPS5315527U (en) * | 1976-07-22 | 1978-02-09 |
-
1981
- 1981-03-04 JP JP56031046A patent/JPS57145317A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5312607U (en) * | 1976-07-15 | 1978-02-02 | ||
| JPS5315527U (en) * | 1976-07-22 | 1978-02-09 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124817A (en) * | 1983-12-09 | 1985-07-03 | Fujitsu Ltd | Vapor-phase epitaxial growth method |
| JPH0554254B2 (en) * | 1983-12-09 | 1993-08-12 | Fujitsu Ltd |
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