JPS5783025A - Manufacture of semiconductor substrate - Google Patents

Manufacture of semiconductor substrate

Info

Publication number
JPS5783025A
JPS5783025A JP55158442A JP15844280A JPS5783025A JP S5783025 A JPS5783025 A JP S5783025A JP 55158442 A JP55158442 A JP 55158442A JP 15844280 A JP15844280 A JP 15844280A JP S5783025 A JPS5783025 A JP S5783025A
Authority
JP
Japan
Prior art keywords
substrate
film
approx
silicon
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55158442A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55158442A priority Critical patent/JPS5783025A/en
Publication of JPS5783025A publication Critical patent/JPS5783025A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02499—Monolayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a semiconductor substrate for a device which does not produce deterioration by sufficiently thickly forming an insulating layer having low thermal expansion coefficient on the substrate so as to ignore the parasitic electrostatic capacity and forming a non-single crystal silicon layer via an extremely thin nitrided film thereon, thereby forming single crystal by laser annealing. CONSTITUTION:An SiO2 film 4 is produced in a thickness capable of ignoring the parasitic electrostatic capacity, i.e., approx. 1mum on a silicon substrate 1 in a thermal oxidiation furnace or the like, and a thin Si3N4 film 5 is grown in gas phase in a thickness of approx. 1,000Angstrom thereon. Then, a polycrystalline silicon is grown in gas phase or amorphous silicon is deposited in vacuum on the overall surface of the film 5 to accumulate a silicon layer 3 of approx. 0.4mum, a laser ray is emitted thereto to melt it, and a single crystal is thus produced. Thus, the parasitic electrostatic capacity is reduced, no crack is produced at the insulating layer, and a substrate having less strain can be obtained.
JP55158442A 1980-11-11 1980-11-11 Manufacture of semiconductor substrate Pending JPS5783025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55158442A JPS5783025A (en) 1980-11-11 1980-11-11 Manufacture of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55158442A JPS5783025A (en) 1980-11-11 1980-11-11 Manufacture of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5783025A true JPS5783025A (en) 1982-05-24

Family

ID=15671854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55158442A Pending JPS5783025A (en) 1980-11-11 1980-11-11 Manufacture of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5783025A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294670A (en) * 2006-04-25 2007-11-08 Toyota Motor Corp Semiconductor device and method for manufacturing the same
CN102549729A (en) * 2009-12-16 2012-07-04 国家半导体公司 Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294670A (en) * 2006-04-25 2007-11-08 Toyota Motor Corp Semiconductor device and method for manufacturing the same
CN102549729A (en) * 2009-12-16 2012-07-04 国家半导体公司 Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates

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