JPH0554254B2 - - Google Patents
Info
- Publication number
- JPH0554254B2 JPH0554254B2 JP58233118A JP23311883A JPH0554254B2 JP H0554254 B2 JPH0554254 B2 JP H0554254B2 JP 58233118 A JP58233118 A JP 58233118A JP 23311883 A JP23311883 A JP 23311883A JP H0554254 B2 JPH0554254 B2 JP H0554254B2
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- single crystal
- silicon
- growth
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H10P14/24—
-
- H10P14/3411—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58233118A JPS60124817A (ja) | 1983-12-09 | 1983-12-09 | 気相エピタキシャル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58233118A JPS60124817A (ja) | 1983-12-09 | 1983-12-09 | 気相エピタキシャル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60124817A JPS60124817A (ja) | 1985-07-03 |
| JPH0554254B2 true JPH0554254B2 (cg-RX-API-DMAC10.html) | 1993-08-12 |
Family
ID=16950043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58233118A Granted JPS60124817A (ja) | 1983-12-09 | 1983-12-09 | 気相エピタキシャル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60124817A (cg-RX-API-DMAC10.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009182354A (ja) * | 2009-05-19 | 2009-08-13 | Takashi Katoda | 基板上に作製された半導体光デバイスおよびその作製方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57145317A (en) * | 1981-03-04 | 1982-09-08 | Toshiba Corp | Manufacture of semiconductor device |
| JPS57178315A (en) * | 1981-04-27 | 1982-11-02 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor single crystal |
-
1983
- 1983-12-09 JP JP58233118A patent/JPS60124817A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60124817A (ja) | 1985-07-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |