JPS60118689A - 結晶成長方法 - Google Patents

結晶成長方法

Info

Publication number
JPS60118689A
JPS60118689A JP22519483A JP22519483A JPS60118689A JP S60118689 A JPS60118689 A JP S60118689A JP 22519483 A JP22519483 A JP 22519483A JP 22519483 A JP22519483 A JP 22519483A JP S60118689 A JPS60118689 A JP S60118689A
Authority
JP
Japan
Prior art keywords
substrate
crystal
substance
atmosphere
grow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22519483A
Other languages
English (en)
Japanese (ja)
Other versions
JPH052637B2 (enExample
Inventor
Katsunobu Aoyanagi
克信 青柳
Susumu Nanba
難波　進
Yuzaburo Segawa
勇三郎 瀬川
Sohachi Iwai
岩井　荘八
Konen Doi
土居　功年
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP22519483A priority Critical patent/JPS60118689A/ja
Publication of JPS60118689A publication Critical patent/JPS60118689A/ja
Publication of JPH052637B2 publication Critical patent/JPH052637B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP22519483A 1983-11-29 1983-11-29 結晶成長方法 Granted JPS60118689A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22519483A JPS60118689A (ja) 1983-11-29 1983-11-29 結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22519483A JPS60118689A (ja) 1983-11-29 1983-11-29 結晶成長方法

Publications (2)

Publication Number Publication Date
JPS60118689A true JPS60118689A (ja) 1985-06-26
JPH052637B2 JPH052637B2 (enExample) 1993-01-12

Family

ID=16825440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22519483A Granted JPS60118689A (ja) 1983-11-29 1983-11-29 結晶成長方法

Country Status (1)

Country Link
JP (1) JPS60118689A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244562A (en) * 1975-10-07 1977-04-07 Fujitsu Ltd Epitaxial growth method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244562A (en) * 1975-10-07 1977-04-07 Fujitsu Ltd Epitaxial growth method

Also Published As

Publication number Publication date
JPH052637B2 (enExample) 1993-01-12

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