JPH052637B2 - - Google Patents

Info

Publication number
JPH052637B2
JPH052637B2 JP58225194A JP22519483A JPH052637B2 JP H052637 B2 JPH052637 B2 JP H052637B2 JP 58225194 A JP58225194 A JP 58225194A JP 22519483 A JP22519483 A JP 22519483A JP H052637 B2 JPH052637 B2 JP H052637B2
Authority
JP
Japan
Prior art keywords
substrate
atmosphere
selected area
compound
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58225194A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60118689A (ja
Inventor
Katsunobu Aoyanagi
Susumu Nanba
Juzaburo Segawa
Sohachi Iwai
Konen Doi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP22519483A priority Critical patent/JPS60118689A/ja
Publication of JPS60118689A publication Critical patent/JPS60118689A/ja
Publication of JPH052637B2 publication Critical patent/JPH052637B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP22519483A 1983-11-29 1983-11-29 結晶成長方法 Granted JPS60118689A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22519483A JPS60118689A (ja) 1983-11-29 1983-11-29 結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22519483A JPS60118689A (ja) 1983-11-29 1983-11-29 結晶成長方法

Publications (2)

Publication Number Publication Date
JPS60118689A JPS60118689A (ja) 1985-06-26
JPH052637B2 true JPH052637B2 (enExample) 1993-01-12

Family

ID=16825440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22519483A Granted JPS60118689A (ja) 1983-11-29 1983-11-29 結晶成長方法

Country Status (1)

Country Link
JP (1) JPS60118689A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943815B2 (ja) * 1975-10-07 1984-10-24 富士通株式会社 エピタキシヤル成長法

Also Published As

Publication number Publication date
JPS60118689A (ja) 1985-06-26

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