JPS60116177A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60116177A
JPS60116177A JP58224634A JP22463483A JPS60116177A JP S60116177 A JPS60116177 A JP S60116177A JP 58224634 A JP58224634 A JP 58224634A JP 22463483 A JP22463483 A JP 22463483A JP S60116177 A JPS60116177 A JP S60116177A
Authority
JP
Japan
Prior art keywords
semiconductor
mode
layer
semiconductor layer
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58224634A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6338872B2 (enrdf_load_stackoverflow
Inventor
Yoshimi Yamashita
良美 山下
Kinshiro Kosemura
小瀬村　欣司郎
Hidetoshi Ishiwari
石割　秀敏
Sumio Yamamoto
純生 山本
Shigeru Kuroda
黒田　滋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58224634A priority Critical patent/JPS60116177A/ja
Priority to KR1019840007422A priority patent/KR890003416B1/ko
Priority to DE8484308259T priority patent/DE3476841D1/de
Priority to EP84308259A priority patent/EP0143656B1/en
Priority to US06/676,359 priority patent/US4742379A/en
Publication of JPS60116177A publication Critical patent/JPS60116177A/ja
Priority to US07/146,664 priority patent/US4849368A/en
Publication of JPS6338872B2 publication Critical patent/JPS6338872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP58224634A 1983-11-29 1983-11-29 半導体装置の製造方法 Granted JPS60116177A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP58224634A JPS60116177A (ja) 1983-11-29 1983-11-29 半導体装置の製造方法
KR1019840007422A KR890003416B1 (ko) 1983-11-29 1984-11-27 반도체 장치 및 그의 제조방법
DE8484308259T DE3476841D1 (en) 1983-11-29 1984-11-28 Compound semiconductor device and method of producing it
EP84308259A EP0143656B1 (en) 1983-11-29 1984-11-28 Compound semiconductor device and method of producing it
US06/676,359 US4742379A (en) 1983-11-29 1984-11-29 HEMT with etch-stop
US07/146,664 US4849368A (en) 1983-11-29 1988-01-21 Method of producing a two-dimensional electron gas semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58224634A JPS60116177A (ja) 1983-11-29 1983-11-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60116177A true JPS60116177A (ja) 1985-06-22
JPS6338872B2 JPS6338872B2 (enrdf_load_stackoverflow) 1988-08-02

Family

ID=16816780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58224634A Granted JPS60116177A (ja) 1983-11-29 1983-11-29 半導体装置の製造方法

Country Status (2)

Country Link
JP (1) JPS60116177A (enrdf_load_stackoverflow)
KR (1) KR890003416B1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH054325A (ja) * 1991-06-17 1993-01-14 Makita Giken:Kk １側外気吸込形多段水平循環流式乾燥焼付方法および装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH054325A (ja) * 1991-06-17 1993-01-14 Makita Giken:Kk １側外気吸込形多段水平循環流式乾燥焼付方法および装置

Also Published As

Publication number Publication date
KR850004356A (ko) 1985-07-11
JPS6338872B2 (enrdf_load_stackoverflow) 1988-08-02
KR890003416B1 (ko) 1989-09-20

Similar Documents

Publication Publication Date Title
KR970004457B1 (ko) 반도체 장치 및 그 제조 방법
JP5202312B2 (ja) 第ｉｉｉ族窒化物エンハンスメント型デバイス
JP3705431B2 (ja) 半導体装置及びその製造方法
JPS59168677A (ja) 半導体装置及びその製造方法
JPH01258470A (ja) 半導体装置
JPS5833716B2 (ja) シヨツトキ−シヨウヘキガタデンカイコウカトランジスタノ セイゾウホウホウ
JPS60116177A (ja) 半導体装置の製造方法
JPH09213948A (ja) Ｍｏｓ型電界効果トランジスタおよびその製造方法
JP3058040B2 (ja) 半導体装置
JPS5955073A (ja) 半導体装置
JPH0543291B2 (enrdf_load_stackoverflow)
JPH0212927A (ja) Ｍｅｓ　ｆｅｔの製造方法
JPS6233476A (ja) 電界効果トランジスタおよびその製造方法
JPS60116178A (ja) 半導体装置の製造方法
JPS6357946B2 (enrdf_load_stackoverflow)
JPS59218778A (ja) 半導体装置及びその製造方法
JPS60144980A (ja) 半導体装置
JPS6034073A (ja) ショットキ−ゲ−ト型電界効果トランジスタの製造方法
JP2005166947A (ja) エッチング方法、半導体装置の製造方法及び半導体装置
JPS63281473A (ja) 電界効果型半導体装置及びその製造方法
JPH06204259A (ja) 化合物半導体装置の製造方法
JPS6347982A (ja) 半導体装置
JPS6038883A (ja) ショットキゲ−ト型ｆｅｔの製造方法
JPS6223175A (ja) 半導体装置の製造方法
JPS62188379A (ja) 電界効果トランジスタの製造方法