JPS60110159A - ヘテロ接合バイポ−ラトランジスタ - Google Patents

ヘテロ接合バイポ−ラトランジスタ

Info

Publication number
JPS60110159A
JPS60110159A JP58219041A JP21904183A JPS60110159A JP S60110159 A JPS60110159 A JP S60110159A JP 58219041 A JP58219041 A JP 58219041A JP 21904183 A JP21904183 A JP 21904183A JP S60110159 A JPS60110159 A JP S60110159A
Authority
JP
Japan
Prior art keywords
collector
layer
type
base
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58219041A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519809B2 (enrdf_load_stackoverflow
Inventor
Mamoru Kurata
倉田 衛
Jiro Yoshida
二朗 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58219041A priority Critical patent/JPS60110159A/ja
Publication of JPS60110159A publication Critical patent/JPS60110159A/ja
Publication of JPH0519809B2 publication Critical patent/JPH0519809B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP58219041A 1983-11-21 1983-11-21 ヘテロ接合バイポ−ラトランジスタ Granted JPS60110159A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58219041A JPS60110159A (ja) 1983-11-21 1983-11-21 ヘテロ接合バイポ−ラトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58219041A JPS60110159A (ja) 1983-11-21 1983-11-21 ヘテロ接合バイポ−ラトランジスタ

Publications (2)

Publication Number Publication Date
JPS60110159A true JPS60110159A (ja) 1985-06-15
JPH0519809B2 JPH0519809B2 (enrdf_load_stackoverflow) 1993-03-17

Family

ID=16729328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58219041A Granted JPS60110159A (ja) 1983-11-21 1983-11-21 ヘテロ接合バイポ−ラトランジスタ

Country Status (1)

Country Link
JP (1) JPS60110159A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02191338A (ja) * 1989-01-19 1990-07-27 Sumitomo Electric Ind Ltd ヘテロ接合バイポーラトランジスタ
US5010382A (en) * 1988-12-09 1991-04-23 Kabushiki Kaisha Toshiba Heterojunction bipolar transistor having double hetero structure
JPH0496561A (ja) * 1990-08-13 1992-03-27 Sharp Corp 遠隔雨量情報収集設備装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125871A (en) * 1980-03-10 1981-10-02 Nippon Telegr & Teleph Corp <Ntt> Transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125871A (en) * 1980-03-10 1981-10-02 Nippon Telegr & Teleph Corp <Ntt> Transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010382A (en) * 1988-12-09 1991-04-23 Kabushiki Kaisha Toshiba Heterojunction bipolar transistor having double hetero structure
JPH02191338A (ja) * 1989-01-19 1990-07-27 Sumitomo Electric Ind Ltd ヘテロ接合バイポーラトランジスタ
JPH0496561A (ja) * 1990-08-13 1992-03-27 Sharp Corp 遠隔雨量情報収集設備装置

Also Published As

Publication number Publication date
JPH0519809B2 (enrdf_load_stackoverflow) 1993-03-17

Similar Documents

Publication Publication Date Title
US4821082A (en) Heterojunction bipolar transistor with substantially aligned energy levels
US7482643B2 (en) Semiconductor device
US6696710B2 (en) Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
US6806513B2 (en) Heterojunction bipolar transistor having wide bandgap material in collector
JP2005294831A (ja) ヘテロ接合バイポーラ・トランジスタ
US20070096150A1 (en) Heterojunction bipolar transistor
JPS60110159A (ja) ヘテロ接合バイポ−ラトランジスタ
JPS60160166A (ja) ヘテロ接合コレクタを有するバイポ−ラトランジスタ
US20040065897A1 (en) Heterojunction bipolar transistor having non-uniformly doped collector for improved safe-operating area
JP3046320B2 (ja) 半導体装置
JP4793905B2 (ja) 半導体装置およびその製造方法
JPH0338835A (ja) 半導体結晶
Nakagawa et al. Symmetric PnP InAlAs/InGaAs double-heterojunction bipolar transistors fabricated with Si-ion implantation
JPH0388369A (ja) ヘテロ構造半導体装置
JPS6247157A (ja) 半導体装置
JP2564296B2 (ja) 半導体装置
Liu et al. Multiple negative-differential-resistance (NDR) of InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT)
JP2014183145A (ja) ヘテロ接合バイポーラトランジスタ
Yalon et al. A Degenerately Doped $\hbox {In} _ {0.53}\hbox {Ga} _ {0.47}\hbox {As} $ Bipolar Junction Transistor
JP2004014922A (ja) ヘテロ接合バイポーラトランジスタ
JPS63236358A (ja) 半導体装置
JPH04267529A (ja) コレクタトップ型ヘテロ接合バイポーラトランジスタの製造方法
JPH0536715A (ja) ヘテロ接合バイポーラトランジスタ
JPH05121430A (ja) ヘテロ接合バイポーラトランジスタ
JP2001156078A (ja) ヘテロ接合バイポーラトランジスタ