JPS60108370A - 高純度炭化けい素スパッタリング用ターゲット材の製造方法 - Google Patents

高純度炭化けい素スパッタリング用ターゲット材の製造方法

Info

Publication number
JPS60108370A
JPS60108370A JP58213478A JP21347883A JPS60108370A JP S60108370 A JPS60108370 A JP S60108370A JP 58213478 A JP58213478 A JP 58213478A JP 21347883 A JP21347883 A JP 21347883A JP S60108370 A JPS60108370 A JP S60108370A
Authority
JP
Japan
Prior art keywords
silicon carbide
target
sputtering target
sintering
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58213478A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0214312B2 (en:Method
Inventor
守信 遠藤
鈴木　仁一郎
戸出　孝
高見沢　稔
小林　泰史
本宮　達彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP58213478A priority Critical patent/JPS60108370A/ja
Publication of JPS60108370A publication Critical patent/JPS60108370A/ja
Publication of JPH0214312B2 publication Critical patent/JPH0214312B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)
  • Physical Vapour Deposition (AREA)
JP58213478A 1983-11-14 1983-11-14 高純度炭化けい素スパッタリング用ターゲット材の製造方法 Granted JPS60108370A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58213478A JPS60108370A (ja) 1983-11-14 1983-11-14 高純度炭化けい素スパッタリング用ターゲット材の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58213478A JPS60108370A (ja) 1983-11-14 1983-11-14 高純度炭化けい素スパッタリング用ターゲット材の製造方法

Publications (2)

Publication Number Publication Date
JPS60108370A true JPS60108370A (ja) 1985-06-13
JPH0214312B2 JPH0214312B2 (en:Method) 1990-04-06

Family

ID=16639861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58213478A Granted JPS60108370A (ja) 1983-11-14 1983-11-14 高純度炭化けい素スパッタリング用ターゲット材の製造方法

Country Status (1)

Country Link
JP (1) JPS60108370A (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001756A (en) * 1996-02-29 1999-12-14 Bridgestone Corporation Process for making a silicon carbide sintered body
US6090733A (en) * 1997-08-27 2000-07-18 Bridgestone Corporation Sintered silicon carbide and method for producing the same
JP2011256062A (ja) * 2010-06-07 2011-12-22 Bridgestone Corp 炭化ケイ素焼結体の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001756A (en) * 1996-02-29 1999-12-14 Bridgestone Corporation Process for making a silicon carbide sintered body
US6090733A (en) * 1997-08-27 2000-07-18 Bridgestone Corporation Sintered silicon carbide and method for producing the same
US6214755B1 (en) 1997-08-27 2001-04-10 Bridgestone Corporation Method for producing sintered silicon carbide
JP2011256062A (ja) * 2010-06-07 2011-12-22 Bridgestone Corp 炭化ケイ素焼結体の製造方法

Also Published As

Publication number Publication date
JPH0214312B2 (en:Method) 1990-04-06

Similar Documents

Publication Publication Date Title
TWI402213B (zh) Production method of silicon oxide powder
EP0149044A1 (en) Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom
JPH1012692A (ja) ダミーウエハ
JP4595153B2 (ja) 炭化ケイ素体およびその製造方法
JPS60108370A (ja) 高純度炭化けい素スパッタリング用ターゲット材の製造方法
CN118530052A (zh) 一种碳化钽复合涂层及其热解结合原位生成的制备方法
JPH0329023B2 (en:Method)
CN113417002B (zh) 一种厘米尺寸六方氮化硼单晶的生长方法
JPH0688866B2 (ja) 窒化ホウ素被覆ルツボおよびその製造方法
JP2794173B2 (ja) 複合炭素被膜の形成方法
JP2614870B2 (ja) 多結晶質ダイヤモンド焼結体の製造法
JPH03243776A (ja) セラミックス被覆用黒鉛基材及びｃｖｄ炉用内部部品
JPH04128369A (ja) 炭化珪素スパッタリング用ターゲット及びその製造方法
JPS60155508A (ja) 耐湿性にすぐれた透明性非晶質窒化ホウ素組成物
CN115747604B (zh) 一种Mo基高熵合金及其应用
JPS63225591A (ja) 炭化珪素被覆黒鉛材料の製造方法
JPS6117910B2 (en:Method)
JPS5921577A (ja) 炭化珪素粉末成形体の焼結方法
JPH0310562B2 (en:Method)
JPH1053871A (ja) ダイヤモンド被覆炭素部材
JPH10324530A (ja) ガラス成形用金型
JPH04149017A (ja) 炭化珪素粉末及びその製造方法
JP2003068594A (ja) ＳｉＣダミーウエハ及びその製造方法
JPH03247506A (ja) 多結晶炭化珪素
CN114231940A (zh) 以羰基钼为前驱体制备钼溅射靶材的方法