JPS6010716A - 半導体ウエ−ハ試験方法 - Google Patents

半導体ウエ−ハ試験方法

Info

Publication number
JPS6010716A
JPS6010716A JP11959583A JP11959583A JPS6010716A JP S6010716 A JPS6010716 A JP S6010716A JP 11959583 A JP11959583 A JP 11959583A JP 11959583 A JP11959583 A JP 11959583A JP S6010716 A JPS6010716 A JP S6010716A
Authority
JP
Japan
Prior art keywords
row
defective
wafer
point
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11959583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6321345B2 (enrdf_load_stackoverflow
Inventor
Yasunori Hirose
廣瀬　恭典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP11959583A priority Critical patent/JPS6010716A/ja
Publication of JPS6010716A publication Critical patent/JPS6010716A/ja
Publication of JPS6321345B2 publication Critical patent/JPS6321345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP11959583A 1983-06-30 1983-06-30 半導体ウエ−ハ試験方法 Granted JPS6010716A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11959583A JPS6010716A (ja) 1983-06-30 1983-06-30 半導体ウエ−ハ試験方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11959583A JPS6010716A (ja) 1983-06-30 1983-06-30 半導体ウエ−ハ試験方法

Publications (2)

Publication Number Publication Date
JPS6010716A true JPS6010716A (ja) 1985-01-19
JPS6321345B2 JPS6321345B2 (enrdf_load_stackoverflow) 1988-05-06

Family

ID=14765271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11959583A Granted JPS6010716A (ja) 1983-06-30 1983-06-30 半導体ウエ−ハ試験方法

Country Status (1)

Country Link
JP (1) JPS6010716A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6425430A (en) * 1987-07-21 1989-01-27 Tokyo Electron Ltd Probe device
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7679737B2 (en) 2007-01-10 2010-03-16 Fujitsu Microelectronics Limited Method, system and apparatus of inspection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6425430A (en) * 1987-07-21 1989-01-27 Tokyo Electron Ltd Probe device
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7679737B2 (en) 2007-01-10 2010-03-16 Fujitsu Microelectronics Limited Method, system and apparatus of inspection

Also Published As

Publication number Publication date
JPS6321345B2 (enrdf_load_stackoverflow) 1988-05-06

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