JPS6010715A - 化学気相成長装置 - Google Patents

化学気相成長装置

Info

Publication number
JPS6010715A
JPS6010715A JP11927883A JP11927883A JPS6010715A JP S6010715 A JPS6010715 A JP S6010715A JP 11927883 A JP11927883 A JP 11927883A JP 11927883 A JP11927883 A JP 11927883A JP S6010715 A JPS6010715 A JP S6010715A
Authority
JP
Japan
Prior art keywords
reaction tube
tube
film
reaction
reactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11927883A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0241166B2 (enrdf_load_stackoverflow
Inventor
Yoshimi Shiotani
喜美 塩谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11927883A priority Critical patent/JPS6010715A/ja
Publication of JPS6010715A publication Critical patent/JPS6010715A/ja
Publication of JPH0241166B2 publication Critical patent/JPH0241166B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP11927883A 1983-06-30 1983-06-30 化学気相成長装置 Granted JPS6010715A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11927883A JPS6010715A (ja) 1983-06-30 1983-06-30 化学気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11927883A JPS6010715A (ja) 1983-06-30 1983-06-30 化学気相成長装置

Publications (2)

Publication Number Publication Date
JPS6010715A true JPS6010715A (ja) 1985-01-19
JPH0241166B2 JPH0241166B2 (enrdf_load_stackoverflow) 1990-09-14

Family

ID=14757419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11927883A Granted JPS6010715A (ja) 1983-06-30 1983-06-30 化学気相成長装置

Country Status (1)

Country Link
JP (1) JPS6010715A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989543A (en) * 1987-10-15 1991-02-05 Solems (S.A.) Process and means for producing films for use in electronics and/or optoelectronics using plasma
JP2015109343A (ja) * 2013-12-04 2015-06-11 キヤノン株式会社 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364676A (en) * 1976-11-22 1978-06-09 Hitachi Ltd Treating apparatus in gas phase
JPS5754328A (ja) * 1980-09-19 1982-03-31 Hitachi Ltd Genatsukisoseichosochi

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364676A (en) * 1976-11-22 1978-06-09 Hitachi Ltd Treating apparatus in gas phase
JPS5754328A (ja) * 1980-09-19 1982-03-31 Hitachi Ltd Genatsukisoseichosochi

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989543A (en) * 1987-10-15 1991-02-05 Solems (S.A.) Process and means for producing films for use in electronics and/or optoelectronics using plasma
JP2015109343A (ja) * 2013-12-04 2015-06-11 キヤノン株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0241166B2 (enrdf_load_stackoverflow) 1990-09-14

Similar Documents

Publication Publication Date Title
US5119541A (en) Wafer succeptor apparatus
JPH05163573A (ja) 薄膜形成装置および薄膜形成方法
JPH02138473A (ja) 縦型熱処理装置
JPS6042823A (ja) 薄膜形成方法
SE8200235L (sv) Forfarande och apparat for kemisk angavsettning av filmer pa kiselskivor
GB2282825A (en) Chemical vapour deposition apparatus
JPH0322523A (ja) 気相成長装置
JPH06275533A (ja) 縦型cvd装置
JPS6010715A (ja) 化学気相成長装置
JP3118737B2 (ja) 被処理体の処理方法
JP2003017479A (ja) プリ・コート方法、処理方法及びプラズマ装置
JP3738494B2 (ja) 枚葉式の熱処理装置
JPH05211122A (ja) 縦型減圧化学気相成長装置
JP2001131751A (ja) 気相成長装置および半導体装置の製造方法
JP2881069B2 (ja) 半導体デバイスの製法
JPS607378B2 (ja) Cvd装置
JPH0410617A (ja) 半導体製造装置
JPH0322522A (ja) 気相成長装置
JPH10223620A (ja) 半導体製造装置
JPH02268433A (ja) 半導体装置の製造方法
JPS60257129A (ja) 膜形成装置
JPH04320025A (ja) 化学気相成長装置
JPH04139820A (ja) 縦型減圧cvd装置
JPS5943988B2 (ja) 超微粒子膜の製造方法および製造装置
JPH04206715A (ja) 半導体製造装置