JPS60102764A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS60102764A
JPS60102764A JP58210350A JP21035083A JPS60102764A JP S60102764 A JPS60102764 A JP S60102764A JP 58210350 A JP58210350 A JP 58210350A JP 21035083 A JP21035083 A JP 21035083A JP S60102764 A JPS60102764 A JP S60102764A
Authority
JP
Japan
Prior art keywords
transistor
emitter
hole
current
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58210350A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6366066B2 (enExample
Inventor
Yoshikuni Hoshino
星野　芳邦
Kenji Matsui
松井　研二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC Corp
Nippon Electric Co Ltd
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd, NEC IC Microcomputer Systems Co Ltd filed Critical NEC Corp
Priority to JP58210350A priority Critical patent/JPS60102764A/ja
Publication of JPS60102764A publication Critical patent/JPS60102764A/ja
Publication of JPS6366066B2 publication Critical patent/JPS6366066B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58210350A 1983-11-09 1983-11-09 半導体集積回路 Granted JPS60102764A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58210350A JPS60102764A (ja) 1983-11-09 1983-11-09 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58210350A JPS60102764A (ja) 1983-11-09 1983-11-09 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS60102764A true JPS60102764A (ja) 1985-06-06
JPS6366066B2 JPS6366066B2 (enExample) 1988-12-19

Family

ID=16587939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58210350A Granted JPS60102764A (ja) 1983-11-09 1983-11-09 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS60102764A (enExample)

Also Published As

Publication number Publication date
JPS6366066B2 (enExample) 1988-12-19

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