JPS6366066B2 - - Google Patents
Info
- Publication number
- JPS6366066B2 JPS6366066B2 JP58210350A JP21035083A JPS6366066B2 JP S6366066 B2 JPS6366066 B2 JP S6366066B2 JP 58210350 A JP58210350 A JP 58210350A JP 21035083 A JP21035083 A JP 21035083A JP S6366066 B2 JPS6366066 B2 JP S6366066B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- emitter
- hole
- current
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
Landscapes
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58210350A JPS60102764A (ja) | 1983-11-09 | 1983-11-09 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58210350A JPS60102764A (ja) | 1983-11-09 | 1983-11-09 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60102764A JPS60102764A (ja) | 1985-06-06 |
| JPS6366066B2 true JPS6366066B2 (enExample) | 1988-12-19 |
Family
ID=16587939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58210350A Granted JPS60102764A (ja) | 1983-11-09 | 1983-11-09 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60102764A (enExample) |
-
1983
- 1983-11-09 JP JP58210350A patent/JPS60102764A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60102764A (ja) | 1985-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0365663B2 (enExample) | ||
| JPS6366066B2 (enExample) | ||
| JPH0434307B2 (enExample) | ||
| JPH0147898B2 (enExample) | ||
| JP3179211B2 (ja) | 半導体集積回路装置 | |
| JPH0728060B2 (ja) | 磁気低抗素子 | |
| JPH0418459B2 (enExample) | ||
| JPS643056B2 (enExample) | ||
| JPS5935181B2 (ja) | 混成集積回路装置 | |
| JPS595657A (ja) | マスタ−スライス方式の半導体集積回路 | |
| JP2901280B2 (ja) | 半導体装置 | |
| JP2624280B2 (ja) | Iil素子 | |
| JPH065788A (ja) | 半導体装置 | |
| JP2792460B2 (ja) | マスタスライスlsi | |
| JPH0120538B2 (enExample) | ||
| JPH0117170B2 (enExample) | ||
| JPH0582083B2 (enExample) | ||
| JP2529396B2 (ja) | 半導体集積回路装置 | |
| JPH0421344B2 (enExample) | ||
| JP2780553B2 (ja) | 半導体集積回路装置 | |
| JPH0133842B2 (enExample) | ||
| JPH0510379Y2 (enExample) | ||
| JP2529396C (enExample) | ||
| JPH0381325B2 (enExample) | ||
| JPS6148962A (ja) | 半導体集積回路装置 |