JPS5994874A - Mosトランジスタ - Google Patents
MosトランジスタInfo
- Publication number
- JPS5994874A JPS5994874A JP57204793A JP20479382A JPS5994874A JP S5994874 A JPS5994874 A JP S5994874A JP 57204793 A JP57204793 A JP 57204793A JP 20479382 A JP20479382 A JP 20479382A JP S5994874 A JPS5994874 A JP S5994874A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diffusion region
- electrode
- region
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
- 
        - H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
 
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP57204793A JPS5994874A (ja) | 1982-11-22 | 1982-11-22 | Mosトランジスタ | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP57204793A JPS5994874A (ja) | 1982-11-22 | 1982-11-22 | Mosトランジスタ | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS5994874A true JPS5994874A (ja) | 1984-05-31 | 
| JPH0447986B2 JPH0447986B2 (OSRAM) | 1992-08-05 | 
Family
ID=16496443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP57204793A Granted JPS5994874A (ja) | 1982-11-22 | 1982-11-22 | Mosトランジスタ | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS5994874A (OSRAM) | 
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JP2007067127A (ja) * | 2005-08-31 | 2007-03-15 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 | 
- 
        1982
        - 1982-11-22 JP JP57204793A patent/JPS5994874A/ja active Granted
 
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JP2007067127A (ja) * | 2005-08-31 | 2007-03-15 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 | 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPH0447986B2 (OSRAM) | 1992-08-05 | 
Similar Documents
| Publication | Publication Date | Title | 
|---|---|---|
| US9755069B2 (en) | Semiconductor device | |
| US8067804B2 (en) | Semiconductor device having an SOI structure, manufacturing method thereof, and memory circuit | |
| US4860084A (en) | Semiconductor device MOSFET with V-shaped drain contact | |
| JPH0817233B2 (ja) | 絶縁ゲート型バイポーラトランジスタ | |
| US6525376B1 (en) | High withstand voltage insulated gate N-channel field effect transistor | |
| JPS63141375A (ja) | 絶縁ゲ−ト電界効果トランジスタ | |
| JPH049378B2 (OSRAM) | ||
| JPS63287064A (ja) | Mis形半導体装置およびその製造方法 | |
| JPS59149056A (ja) | 縦型mosトランジスタ | |
| JPH04273165A (ja) | 横形二重拡散mosfetの製造方法 | |
| JPS5994874A (ja) | Mosトランジスタ | |
| JPS63194367A (ja) | 半導体装置 | |
| US5270566A (en) | Insulated gate semiconductor device | |
| EP0109692A1 (en) | Semiconductor device for a MOSFET | |
| JPS626352B2 (OSRAM) | ||
| JPH0283982A (ja) | 電界効果型トランジスタ | |
| JP4692481B2 (ja) | 高耐圧横型mosfetを備える半導体装置 | |
| JPH0328836B2 (OSRAM) | ||
| JPH0555583A (ja) | 絶縁ゲート型バイポーラトランジスタの製造方法 | |
| JPH01274469A (ja) | ダイオード | |
| JPS59100569A (ja) | Mosトランジスタ | |
| JP2785792B2 (ja) | 電力用半導体素子 | |
| JPH09181335A (ja) | 半導体装置 | |
| JPH10242456A (ja) | 横型絶縁ゲートバイポーラトランジスタ | |
| JPH02202063A (ja) | 半導体装置 |