JPS5994815A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5994815A
JPS5994815A JP20481982A JP20481982A JPS5994815A JP S5994815 A JPS5994815 A JP S5994815A JP 20481982 A JP20481982 A JP 20481982A JP 20481982 A JP20481982 A JP 20481982A JP S5994815 A JPS5994815 A JP S5994815A
Authority
JP
Japan
Prior art keywords
substrate
compound semiconductor
gaas substrate
crystal
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20481982A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023297B2 (enExample
Inventor
Kuninori Kitahara
邦紀 北原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20481982A priority Critical patent/JPS5994815A/ja
Publication of JPS5994815A publication Critical patent/JPS5994815A/ja
Publication of JPH023297B2 publication Critical patent/JPH023297B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP20481982A 1982-11-22 1982-11-22 半導体装置の製造方法 Granted JPS5994815A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20481982A JPS5994815A (ja) 1982-11-22 1982-11-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20481982A JPS5994815A (ja) 1982-11-22 1982-11-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5994815A true JPS5994815A (ja) 1984-05-31
JPH023297B2 JPH023297B2 (enExample) 1990-01-23

Family

ID=16496902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20481982A Granted JPS5994815A (ja) 1982-11-22 1982-11-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5994815A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276224A (ja) * 1988-09-10 1990-03-15 Fujitsu Ltd 化合物半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882575A (ja) * 1981-11-11 1983-05-18 Nippon Telegr & Teleph Corp <Ntt> 半導体基板の製法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882575A (ja) * 1981-11-11 1983-05-18 Nippon Telegr & Teleph Corp <Ntt> 半導体基板の製法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276224A (ja) * 1988-09-10 1990-03-15 Fujitsu Ltd 化合物半導体装置の製造方法

Also Published As

Publication number Publication date
JPH023297B2 (enExample) 1990-01-23

Similar Documents

Publication Publication Date Title
KR100202003B1 (ko) 반도체 및 반도체기판표면의 산화막의 형성방법
US4033788A (en) Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
US4493142A (en) III-V Based semiconductor devices and a process for fabrication
US4666532A (en) Denuding silicon substrates with oxygen and halogen
JPS618931A (ja) 半導体装置の製造方法
JPS6236000B2 (enExample)
JPS5994815A (ja) 半導体装置の製造方法
US4525239A (en) Extrinsic gettering of GaAs wafers for MESFETS and integrated circuits
JP3038063B2 (ja) 化合物半導体の表面不活性化方法
US5620932A (en) Method of oxidizing a semiconductor wafer
JPS62123098A (ja) シリコン単結晶の製造方法
JPS60136267A (ja) 半導体装置の製造方法
JPS6326541B2 (enExample)
JP3263956B2 (ja) 半導体装置の製造方法
JP2639376B2 (ja) Ｉｉｉ −ｖ族化合物半導体の成長方法
KR910008979B1 (ko) 금속열처리에 의한 고품위 다결정실리콘 박막형성방법
JPH03171737A (ja) 化合物半導体装置の製造方法
JPH0227320B2 (enExample)
JPH08279475A (ja) 化合物半導体における能動層の形成方法
JPS6149427A (ja) 半導体装置の製造方法
JP2698609B2 (ja) 化合物半導体装置の製造方法
JPH0661234A (ja) 半導体装置の製造方法
JPS5840818A (ja) 不純物の導入方法
JPS58145160A (ja) 半導体の導電層形成方法
JPS6258138B2 (enExample)