JPS5988830A - 化合物半導体基板表面上にパッシベーション層を形成する方法 - Google Patents

化合物半導体基板表面上にパッシベーション層を形成する方法

Info

Publication number
JPS5988830A
JPS5988830A JP58146793A JP14679383A JPS5988830A JP S5988830 A JPS5988830 A JP S5988830A JP 58146793 A JP58146793 A JP 58146793A JP 14679383 A JP14679383 A JP 14679383A JP S5988830 A JPS5988830 A JP S5988830A
Authority
JP
Japan
Prior art keywords
layer
gaas
substrate
arsenic
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58146793A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0218579B2 (enExample
Inventor
ジヨン・ロ−レンス・フリ−オウフ
ト−マス・ネルソン・ジヤクソン
ピ−タ−・オ−ルハフエン
ジヨ−ジ・デ−ビツド・ベテイツト
ジエリ−・マツクフア−ソン・ウツド−ル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5988830A publication Critical patent/JPS5988830A/ja
Publication of JPH0218579B2 publication Critical patent/JPH0218579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/298—Semiconductor material, e.g. amorphous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58146793A 1982-11-10 1983-08-12 化合物半導体基板表面上にパッシベーション層を形成する方法 Granted JPS5988830A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44065482A 1982-11-10 1982-11-10
US440654 1982-11-10

Publications (2)

Publication Number Publication Date
JPS5988830A true JPS5988830A (ja) 1984-05-22
JPH0218579B2 JPH0218579B2 (enExample) 1990-04-26

Family

ID=23749634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58146793A Granted JPS5988830A (ja) 1982-11-10 1983-08-12 化合物半導体基板表面上にパッシベーション層を形成する方法

Country Status (3)

Country Link
EP (1) EP0108910B1 (enExample)
JP (1) JPS5988830A (enExample)
DE (1) DE3379701D1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
AU2992784A (en) * 1983-06-29 1985-01-03 Stauffer Chemical Company Passivation and insulation of iii-v devices with pnictides
DE19900052A1 (de) * 1999-01-04 2000-07-13 Siemens Ag Halbleiterchip und Verfahren zur Herstellung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959098A (en) * 1973-03-12 1976-05-25 Bell Telephone Laboratories, Incorporated Electrolytic etching of III - V compound semiconductors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.VAC SCI TECHNOL *

Also Published As

Publication number Publication date
EP0108910A3 (en) 1986-09-10
JPH0218579B2 (enExample) 1990-04-26
DE3379701D1 (en) 1989-05-24
EP0108910B1 (en) 1989-04-19
EP0108910A2 (en) 1984-05-23

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