DE3379701D1 - Method of forming a passivated compound semiconductor substrate - Google Patents

Method of forming a passivated compound semiconductor substrate

Info

Publication number
DE3379701D1
DE3379701D1 DE8383109942T DE3379701T DE3379701D1 DE 3379701 D1 DE3379701 D1 DE 3379701D1 DE 8383109942 T DE8383109942 T DE 8383109942T DE 3379701 T DE3379701 T DE 3379701T DE 3379701 D1 DE3379701 D1 DE 3379701D1
Authority
DE
Germany
Prior art keywords
forming
semiconductor substrate
compound semiconductor
passivated
passivated compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383109942T
Other languages
German (de)
English (en)
Inventor
John Lawrence Freeouf
Thomas Nelson Jackson
Peter University Of B Oelhafen
George David Pettit
Jerry Macpherson Woodall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3379701D1 publication Critical patent/DE3379701D1/de
Expired legal-status Critical Current

Links

Classifications

    • H10W74/43
    • H10W74/137
    • H10W74/481
    • H10P14/6306
    • H10P14/68
DE8383109942T 1982-11-10 1983-10-05 Method of forming a passivated compound semiconductor substrate Expired DE3379701D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44065482A 1982-11-10 1982-11-10

Publications (1)

Publication Number Publication Date
DE3379701D1 true DE3379701D1 (en) 1989-05-24

Family

ID=23749634

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383109942T Expired DE3379701D1 (en) 1982-11-10 1983-10-05 Method of forming a passivated compound semiconductor substrate

Country Status (3)

Country Link
EP (1) EP0108910B1 (enExample)
JP (1) JPS5988830A (enExample)
DE (1) DE3379701D1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
IL72244A (en) * 1983-06-29 1988-03-31 Stauffer Chemical Co Passivation and insulation of iii-v semiconductor devices with pnictides
DE19900052A1 (de) * 1999-01-04 2000-07-13 Siemens Ag Halbleiterchip und Verfahren zur Herstellung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959098A (en) * 1973-03-12 1976-05-25 Bell Telephone Laboratories, Incorporated Electrolytic etching of III - V compound semiconductors

Also Published As

Publication number Publication date
JPH0218579B2 (enExample) 1990-04-26
EP0108910B1 (en) 1989-04-19
EP0108910A2 (en) 1984-05-23
EP0108910A3 (en) 1986-09-10
JPS5988830A (ja) 1984-05-22

Similar Documents

Publication Publication Date Title
EP0161740A3 (en) Method of manufacturing semiconductor substrate
EP0190508A3 (en) Method of manufacturing compound semiconductor apparatus
DE3271995D1 (en) Method of manufacturing a semiconductor device
DE3470253D1 (en) Method of manufacturing a semiconductor device having small dimensions
DE3175244D1 (en) Method of dicing a semiconductor wafer
JPS57162338A (en) Method of etching semiconductor
EP0114228A3 (en) Method of forming a capacitor on a substrate
DE3377178D1 (en) A method of manufacturing a semiconductor device comprising an interconnection layer
ZA85974B (en) Method of electrocoating a semiconductor device
DE3473531D1 (en) Method of forming semiconductor devices
EP0226772A3 (en) Method of manufacturing semiconductor substrates
JPS56140646A (en) Method of manufacturing semiconductor circuit on semiconductor silicon substrate
GB2220300B (en) A method of manufacturing silicon substrate
EP0130819A3 (en) A method of positioning a beam to a specific portion of a semiconductor wafer
DE3380002D1 (en) A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate
GB2128401B (en) Method of manufacturing semiconductor device
IL68357A (en) Method of exposure of semiconductor wafers
JPS57139936A (en) Method of characterizing semiconductor wafer
DE3365143D1 (en) Method of manufacturing a semiconductor device
EP0216285A3 (en) Method of annealing a compound semiconductor substrate
DE3379762D1 (en) Method of forming a number of solder portions on a semiconductor wafer
GB8819201D0 (en) Method of manufacturing substrate of gaas compound semiconductor
DE3274600D1 (en) Method of connecting a semiconductor chip to a chip carrier
JPS52154362A (en) Method of forming semiconductor surface of 335 group compound
EP0167391A3 (en) Method of manufacturing semiconductor devices

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee