JPS5984571A - 半導体集積回路装置及びその製造方法 - Google Patents
半導体集積回路装置及びその製造方法Info
- Publication number
- JPS5984571A JPS5984571A JP57194716A JP19471682A JPS5984571A JP S5984571 A JPS5984571 A JP S5984571A JP 57194716 A JP57194716 A JP 57194716A JP 19471682 A JP19471682 A JP 19471682A JP S5984571 A JPS5984571 A JP S5984571A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- oxide film
- gate oxide
- implanted
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57194716A JPS5984571A (ja) | 1982-11-08 | 1982-11-08 | 半導体集積回路装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57194716A JPS5984571A (ja) | 1982-11-08 | 1982-11-08 | 半導体集積回路装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5984571A true JPS5984571A (ja) | 1984-05-16 |
| JPH0554268B2 JPH0554268B2 (enExample) | 1993-08-12 |
Family
ID=16329055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57194716A Granted JPS5984571A (ja) | 1982-11-08 | 1982-11-08 | 半導体集積回路装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984571A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007220736A (ja) * | 2006-02-14 | 2007-08-30 | Toshiba Corp | 半導体装置及びその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591877A (en) * | 1978-12-30 | 1980-07-11 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
-
1982
- 1982-11-08 JP JP57194716A patent/JPS5984571A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591877A (en) * | 1978-12-30 | 1980-07-11 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007220736A (ja) * | 2006-02-14 | 2007-08-30 | Toshiba Corp | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0554268B2 (enExample) | 1993-08-12 |
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