JPS5984571A - 半導体集積回路装置及びその製造方法 - Google Patents

半導体集積回路装置及びその製造方法

Info

Publication number
JPS5984571A
JPS5984571A JP57194716A JP19471682A JPS5984571A JP S5984571 A JPS5984571 A JP S5984571A JP 57194716 A JP57194716 A JP 57194716A JP 19471682 A JP19471682 A JP 19471682A JP S5984571 A JPS5984571 A JP S5984571A
Authority
JP
Japan
Prior art keywords
boron
oxide film
gate oxide
implanted
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57194716A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554268B2 (enrdf_load_stackoverflow
Inventor
Akihiro Komori
小森　昭宏
Akinori Matsuo
章則 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP57194716A priority Critical patent/JPS5984571A/ja
Publication of JPS5984571A publication Critical patent/JPS5984571A/ja
Publication of JPH0554268B2 publication Critical patent/JPH0554268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57194716A 1982-11-08 1982-11-08 半導体集積回路装置及びその製造方法 Granted JPS5984571A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57194716A JPS5984571A (ja) 1982-11-08 1982-11-08 半導体集積回路装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57194716A JPS5984571A (ja) 1982-11-08 1982-11-08 半導体集積回路装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS5984571A true JPS5984571A (ja) 1984-05-16
JPH0554268B2 JPH0554268B2 (enrdf_load_stackoverflow) 1993-08-12

Family

ID=16329055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57194716A Granted JPS5984571A (ja) 1982-11-08 1982-11-08 半導体集積回路装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS5984571A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220736A (ja) * 2006-02-14 2007-08-30 Toshiba Corp 半導体装置及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591877A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591877A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220736A (ja) * 2006-02-14 2007-08-30 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0554268B2 (enrdf_load_stackoverflow) 1993-08-12

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