JPS5984429A - 微細パタ−ン形成方法 - Google Patents

微細パタ−ン形成方法

Info

Publication number
JPS5984429A
JPS5984429A JP57194286A JP19428682A JPS5984429A JP S5984429 A JPS5984429 A JP S5984429A JP 57194286 A JP57194286 A JP 57194286A JP 19428682 A JP19428682 A JP 19428682A JP S5984429 A JPS5984429 A JP S5984429A
Authority
JP
Japan
Prior art keywords
etching
film
pattern
mask
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57194286A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0157333B2 (Direct
Inventor
Shigeyoshi Suzuki
成嘉 鈴木
Kazuhide Saigo
斉郷　和秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57194286A priority Critical patent/JPS5984429A/ja
Priority to US06/501,201 priority patent/US4551417A/en
Priority to CA000429834A priority patent/CA1207216A/en
Priority to IE1339/83A priority patent/IE54731B1/en
Priority to EP83303324A priority patent/EP0096596B2/en
Priority to DE8383303324T priority patent/DE3363914D1/de
Publication of JPS5984429A publication Critical patent/JPS5984429A/ja
Publication of JPH0157333B2 publication Critical patent/JPH0157333B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/73—
    • H10P50/287—

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57194286A 1982-06-08 1982-11-05 微細パタ−ン形成方法 Granted JPS5984429A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP57194286A JPS5984429A (ja) 1982-11-05 1982-11-05 微細パタ−ン形成方法
US06/501,201 US4551417A (en) 1982-06-08 1983-06-06 Method of forming patterns in manufacturing microelectronic devices
CA000429834A CA1207216A (en) 1982-06-08 1983-06-07 Method of forming patterns in manufacturing microelectronic devices
IE1339/83A IE54731B1 (en) 1982-06-08 1983-06-07 Microelectronic device manufacture
EP83303324A EP0096596B2 (en) 1982-06-08 1983-06-08 Microelectronic device manufacture
DE8383303324T DE3363914D1 (en) 1982-06-08 1983-06-08 Microelectronic device manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57194286A JPS5984429A (ja) 1982-11-05 1982-11-05 微細パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS5984429A true JPS5984429A (ja) 1984-05-16
JPH0157333B2 JPH0157333B2 (Direct) 1989-12-05

Family

ID=16322070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57194286A Granted JPS5984429A (ja) 1982-06-08 1982-11-05 微細パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS5984429A (Direct)

Also Published As

Publication number Publication date
JPH0157333B2 (Direct) 1989-12-05

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