JPS5982720A - 光気相成長法 - Google Patents

光気相成長法

Info

Publication number
JPS5982720A
JPS5982720A JP19320682A JP19320682A JPS5982720A JP S5982720 A JPS5982720 A JP S5982720A JP 19320682 A JP19320682 A JP 19320682A JP 19320682 A JP19320682 A JP 19320682A JP S5982720 A JPS5982720 A JP S5982720A
Authority
JP
Japan
Prior art keywords
gas
sensitizer
excited
reactive gas
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19320682A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136694B2 (enrdf_load_stackoverflow
Inventor
Kuniyuki Hamano
浜野　邦幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP19320682A priority Critical patent/JPS5982720A/ja
Publication of JPS5982720A publication Critical patent/JPS5982720A/ja
Publication of JPH0136694B2 publication Critical patent/JPH0136694B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP19320682A 1982-11-02 1982-11-02 光気相成長法 Granted JPS5982720A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19320682A JPS5982720A (ja) 1982-11-02 1982-11-02 光気相成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19320682A JPS5982720A (ja) 1982-11-02 1982-11-02 光気相成長法

Publications (2)

Publication Number Publication Date
JPS5982720A true JPS5982720A (ja) 1984-05-12
JPH0136694B2 JPH0136694B2 (enrdf_load_stackoverflow) 1989-08-02

Family

ID=16304061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19320682A Granted JPS5982720A (ja) 1982-11-02 1982-11-02 光気相成長法

Country Status (1)

Country Link
JP (1) JPS5982720A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6086679A (en) * 1997-10-24 2000-07-11 Quester Technology, Inc. Deposition systems and processes for transport polymerization and chemical vapor deposition
JP2012015259A (ja) * 2010-06-30 2012-01-19 Hitachi High-Technologies Corp 基板処理装置及び基板処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136932A (en) * 1981-02-17 1982-08-24 Seiko Epson Corp Photochemical reaction device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136932A (en) * 1981-02-17 1982-08-24 Seiko Epson Corp Photochemical reaction device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6086679A (en) * 1997-10-24 2000-07-11 Quester Technology, Inc. Deposition systems and processes for transport polymerization and chemical vapor deposition
JP2012015259A (ja) * 2010-06-30 2012-01-19 Hitachi High-Technologies Corp 基板処理装置及び基板処理方法

Also Published As

Publication number Publication date
JPH0136694B2 (enrdf_load_stackoverflow) 1989-08-02

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