JPS5972781A - 光電変換半導体装置 - Google Patents

光電変換半導体装置

Info

Publication number
JPS5972781A
JPS5972781A JP57184297A JP18429782A JPS5972781A JP S5972781 A JPS5972781 A JP S5972781A JP 57184297 A JP57184297 A JP 57184297A JP 18429782 A JP18429782 A JP 18429782A JP S5972781 A JPS5972781 A JP S5972781A
Authority
JP
Japan
Prior art keywords
silicon nitride
film
thickness
nitride film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57184297A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262073B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57184297A priority Critical patent/JPS5972781A/ja
Publication of JPS5972781A publication Critical patent/JPS5972781A/ja
Publication of JPS6262073B2 publication Critical patent/JPS6262073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP57184297A 1982-10-20 1982-10-20 光電変換半導体装置 Granted JPS5972781A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57184297A JPS5972781A (ja) 1982-10-20 1982-10-20 光電変換半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57184297A JPS5972781A (ja) 1982-10-20 1982-10-20 光電変換半導体装置

Publications (2)

Publication Number Publication Date
JPS5972781A true JPS5972781A (ja) 1984-04-24
JPS6262073B2 JPS6262073B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=16150862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57184297A Granted JPS5972781A (ja) 1982-10-20 1982-10-20 光電変換半導体装置

Country Status (1)

Country Link
JP (1) JPS5972781A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8304775B2 (en) 2009-03-09 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
US8525170B2 (en) 2008-04-18 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8546810B2 (en) 2009-05-28 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device, and electronic appliance
US8569120B2 (en) 2008-11-17 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
US8624254B2 (en) 2010-09-14 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8637866B2 (en) 2008-06-27 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5480897B2 (ja) * 2009-06-23 2014-04-23 東レエンジニアリング株式会社 太陽電池

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7738050B2 (en) 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
JP5058084B2 (ja) 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置
JP5216446B2 (ja) 2007-07-27 2013-06-19 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び表示装置の作製方法
JP5572307B2 (ja) 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US7888167B2 (en) 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US8343858B2 (en) 2010-03-02 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525170B2 (en) 2008-04-18 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8637866B2 (en) 2008-06-27 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8569120B2 (en) 2008-11-17 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
US8304775B2 (en) 2009-03-09 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8604481B2 (en) 2009-03-09 2013-12-10 Semiconductor Energy Co., Ltd. Thin film transistor
US8546810B2 (en) 2009-05-28 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device, and electronic appliance
JP5480897B2 (ja) * 2009-06-23 2014-04-23 東レエンジニアリング株式会社 太陽電池
US8993877B2 (en) 2009-06-23 2015-03-31 Toray Engineering Co., Ltd. Solar battery
US8624254B2 (en) 2010-09-14 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor

Also Published As

Publication number Publication date
JPS6262073B2 (enrdf_load_stackoverflow) 1987-12-24

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