JPS5967631A - ウエハ−アライメント方法 - Google Patents
ウエハ−アライメント方法Info
- Publication number
- JPS5967631A JPS5967631A JP57177588A JP17758882A JPS5967631A JP S5967631 A JPS5967631 A JP S5967631A JP 57177588 A JP57177588 A JP 57177588A JP 17758882 A JP17758882 A JP 17758882A JP S5967631 A JPS5967631 A JP S5967631A
- Authority
- JP
- Japan
- Prior art keywords
- alignment
- chip
- wafer
- window
- reticle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 14
- 230000003287 optical effect Effects 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Control Of Position Or Direction (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57177588A JPS5967631A (ja) | 1982-10-12 | 1982-10-12 | ウエハ−アライメント方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57177588A JPS5967631A (ja) | 1982-10-12 | 1982-10-12 | ウエハ−アライメント方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5967631A true JPS5967631A (ja) | 1984-04-17 |
| JPS6258139B2 JPS6258139B2 (enrdf_load_stackoverflow) | 1987-12-04 |
Family
ID=16033608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57177588A Granted JPS5967631A (ja) | 1982-10-12 | 1982-10-12 | ウエハ−アライメント方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5967631A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60108914A (ja) * | 1983-11-17 | 1985-06-14 | Nec Corp | ペレット位置検出方法およびその装置 |
| JP2006336745A (ja) * | 2005-06-01 | 2006-12-14 | Shinko Electric Co Ltd | 電磁クラッチ/ブレーキ |
| US7604099B2 (en) | 2004-03-15 | 2009-10-20 | Mitsubishi Electric Corporation | Brake device for elevator |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5179582A (en) * | 1975-01-07 | 1976-07-10 | Canon Kk | Araimentoyokii pataanhogohoho |
| JPS58159327A (ja) * | 1982-03-18 | 1983-09-21 | Oki Electric Ind Co Ltd | ウエ−ハアラインメントマ−クの保存方法 |
-
1982
- 1982-10-12 JP JP57177588A patent/JPS5967631A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5179582A (en) * | 1975-01-07 | 1976-07-10 | Canon Kk | Araimentoyokii pataanhogohoho |
| JPS58159327A (ja) * | 1982-03-18 | 1983-09-21 | Oki Electric Ind Co Ltd | ウエ−ハアラインメントマ−クの保存方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60108914A (ja) * | 1983-11-17 | 1985-06-14 | Nec Corp | ペレット位置検出方法およびその装置 |
| US7604099B2 (en) | 2004-03-15 | 2009-10-20 | Mitsubishi Electric Corporation | Brake device for elevator |
| JP2006336745A (ja) * | 2005-06-01 | 2006-12-14 | Shinko Electric Co Ltd | 電磁クラッチ/ブレーキ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6258139B2 (enrdf_load_stackoverflow) | 1987-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3197484B2 (ja) | フォトマスク及びその製造方法 | |
| JP3084761B2 (ja) | 露光方法及びマスク | |
| JPS62189468A (ja) | ホトマスク,及びそれを用いた投影露光方法、並びにホトマスクの製造方法 | |
| US4397543A (en) | Mask for imaging a pattern of a photoresist layer, method of making said mask, and use thereof in a photolithographic process | |
| JPS5968928A (ja) | 半導体装置の製造方法 | |
| JPS5967631A (ja) | ウエハ−アライメント方法 | |
| US5798203A (en) | Method of making a negative photoresist image | |
| JPH0664337B2 (ja) | 半導体集積回路用ホトマスク | |
| JP3351417B2 (ja) | 露光方法 | |
| JPH0864520A (ja) | レチクルの回転誤差測定用のレチクルおよび方法 | |
| TW200300961A (en) | Multiple photolithographic exposures with different clear patterns | |
| JPH0845810A (ja) | レジストパターン形成方法 | |
| JPS62271428A (ja) | 投影露光方法及び投影露光装置 | |
| KR100336569B1 (ko) | 위상 반전 마스크 및 이를 이용한 중첩도 측정방법 | |
| KR0135064B1 (ko) | 편광층을 이용한 마스크 및 그를 이용한 반도체웨이퍼의 노광방법 | |
| JPH0934100A (ja) | レティクルとレティクルにより作成される半導体装置 | |
| JPS60211941A (ja) | 露光方法 | |
| KR200141181Y1 (ko) | 최적의 포커스 검색을 위한 다층 마스크 | |
| JPH03180017A (ja) | 半導体装置の製造方法 | |
| JPS6146025A (ja) | 投影露光方法 | |
| JPH05102004A (ja) | レジストパターン形成方法 | |
| JPS6373520A (ja) | ウエハ−の露光方法 | |
| JPH03119719A (ja) | 半導体装置の製造方法 | |
| JPH0458245A (ja) | 微細パターン形成用マスク及びその製造方法 | |
| JPS62262427A (ja) | 露光方法および装置 |