JPS5961073A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5961073A
JPS5961073A JP57171978A JP17197882A JPS5961073A JP S5961073 A JPS5961073 A JP S5961073A JP 57171978 A JP57171978 A JP 57171978A JP 17197882 A JP17197882 A JP 17197882A JP S5961073 A JPS5961073 A JP S5961073A
Authority
JP
Japan
Prior art keywords
layer
substrate
compound semiconductor
etching
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57171978A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0320063B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kinshiro Kosemura
小瀬村　欣司郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57171978A priority Critical patent/JPS5961073A/ja
Publication of JPS5961073A publication Critical patent/JPS5961073A/ja
Publication of JPH0320063B2 publication Critical patent/JPH0320063B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57171978A 1982-09-29 1982-09-29 半導体装置の製造方法 Granted JPS5961073A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57171978A JPS5961073A (ja) 1982-09-29 1982-09-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57171978A JPS5961073A (ja) 1982-09-29 1982-09-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5961073A true JPS5961073A (ja) 1984-04-07
JPH0320063B2 JPH0320063B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-18

Family

ID=15933265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57171978A Granted JPS5961073A (ja) 1982-09-29 1982-09-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5961073A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60244065A (ja) * 1984-05-18 1985-12-03 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置の製造方法
JPS61268060A (ja) * 1985-05-23 1986-11-27 Toshiba Corp 半導体装置の製造方法
JPS6281767A (ja) * 1985-10-07 1987-04-15 Hitachi Ltd 電界効果トランジスタ
JPH0294663A (ja) * 1988-09-30 1990-04-05 Mitsubishi Electric Corp 半導体装置およびその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51104269A (ja) * 1975-03-12 1976-09-14 Fujitsu Ltd Purazumaetsuchinguhoho
JPS5412573A (en) * 1977-06-29 1979-01-30 Matsushita Electric Ind Co Ltd Junction type field effect transistor and production of the same
JPS5515290A (en) * 1978-07-20 1980-02-02 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51104269A (ja) * 1975-03-12 1976-09-14 Fujitsu Ltd Purazumaetsuchinguhoho
JPS5412573A (en) * 1977-06-29 1979-01-30 Matsushita Electric Ind Co Ltd Junction type field effect transistor and production of the same
JPS5515290A (en) * 1978-07-20 1980-02-02 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60244065A (ja) * 1984-05-18 1985-12-03 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置の製造方法
JPS61268060A (ja) * 1985-05-23 1986-11-27 Toshiba Corp 半導体装置の製造方法
JPS6281767A (ja) * 1985-10-07 1987-04-15 Hitachi Ltd 電界効果トランジスタ
JPH0294663A (ja) * 1988-09-30 1990-04-05 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0320063B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-18

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