JPS5961027A - Semiconductor substrate heating apparatus - Google Patents
Semiconductor substrate heating apparatusInfo
- Publication number
- JPS5961027A JPS5961027A JP17031982A JP17031982A JPS5961027A JP S5961027 A JPS5961027 A JP S5961027A JP 17031982 A JP17031982 A JP 17031982A JP 17031982 A JP17031982 A JP 17031982A JP S5961027 A JPS5961027 A JP S5961027A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- heating
- refrigerant
- heater
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 title claims description 12
- 230000007246 mechanism Effects 0.000 claims abstract description 29
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 230000007723 transport mechanism Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 9
- 239000002826 coolant Substances 0.000 abstract 2
- 239000003507 refrigerant Substances 0.000 description 32
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体基板加熱装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a semiconductor substrate heating device.
半導体装置の製造工程では、ベーキング工程にて加熱装
置が使用されている。加熱装置としては、例えば第１図
（３）及び同図（Ｂ） Ｋ示すものが使用されている。In the manufacturing process of semiconductor devices, a heating device is used in a baking process. As the heating device, for example, those shown in FIG. 1(3) and FIG. 1(B) K are used.
この加熱装置は、ヒーターノを内ｆｉＥしたヒーターブ
ロック２上に熱板３を有している。熱板３上には、被処
理体４であるウェー・を搬送する搬送アーム５が、上下
動及び前後進自在に設けられている。熱板３には、ヒー
ターｌによる加熱温度を測定するだめの温度センサー６
が埋設されている。而して、温度センサ−−６の出力に
よりヒーター１による加熱温度を制御して、搬送アーム
５上の被処理体４の温度を所定温度に設定するようにな
っている。このように構成された加熱装置りは、加熱機
構内に加熱用のヒーター１のみを備えているだけなので
、熱板３の温度を極めて短時間に室温等の低温から所定
の加熱温度まで上昇させることができる。しかしながら
、一度設定されだ高（品の状態から、熱板３の温度を所
定の低Ｉ、１隻度１で下げるだめ（では、温度上昇の場
合に比べて約１０倍もの所用時間がかかる欠点がある。This heating device has a hot plate 3 on a heater block 2 with a heater inside. On the hot plate 3, a transfer arm 5 for transferring a wafer, which is an object to be processed 4, is provided so as to be movable up and down and back and forth. The heat plate 3 has a temperature sensor 6 for measuring the heating temperature by the heater l.
is buried. The heating temperature by the heater 1 is controlled by the output of the temperature sensor 6, and the temperature of the object 4 on the transfer arm 5 is set to a predetermined temperature. Since the heating device configured in this manner only includes the heating heater 1 in the heating mechanism, the temperature of the hot plate 3 can be raised from a low temperature such as room temperature to a predetermined heating temperature in an extremely short time. be able to. However, once the temperature is set, the temperature of the hot plate 3 cannot be lowered to a predetermined low I, 1 degree per boat (from the condition of the product), the disadvantage is that it takes about 10 times as long as when the temperature rises. There is.
棟だ、ベーキング工程には、第２図に示すようなオーブ
ン式の加熱装置が使用されている。For the baking process, an oven-type heating device as shown in Figure 2 is used.
この加熱装置は、所定間隔で対設されたベルシト駆動ゾ
ーリー２０に、被処理体２〕を搬送するための搬送ベル
ト２２を取付けだ搬送啼構２３を有している。搬送機構
２３の上方には、搬送面に加熱部を対向して加熱機構２
４が設けられている。加熱機構２４け、搬送面に開口部
を対向して設けたカバー２４ａと、カバー２４ａ内に収
容された加熱源２４ｂと、搬送面上部に設けられた温度
センサー２４ｃとで構成されている。ヒーター４ノは、
図示しない温度制御部を介して温度センサー２４ｃに接
続されており、オーブン内の搬送部を所定温度に設定す
るようになっている。同図中２４ｄは、オーブンの底部
を形成する下部カバーである。This heating device has a conveyor mechanism 23 to which a conveyor belt 22 for conveying the object to be processed 2 is attached to belt-driving Zollies 20 which are arranged opposite each other at a predetermined interval. Above the transport mechanism 23, there is a heating mechanism 2 with a heating section facing the transport surface.
4 is provided. The heating mechanism 24 includes a cover 24a with an opening facing the conveyance surface, a heat source 24b housed in the cover 24a, and a temperature sensor 24c provided above the conveyance surface. Heater 4 is
It is connected to a temperature sensor 24c via a temperature control section (not shown), and is configured to set the conveyance section within the oven to a predetermined temperature. In the figure, 24d is a lower cover forming the bottom of the oven.
このようなオーブン式の加熱装置旦ハ、前述のものと同
様に温度上昇作用だけを有する加熱源２４ｂのみを備え
ているため、オーブン内の温度を一度設定された高温状
態から所望の低温状態まで下げるためには、温度上昇の
場合に比べて遥かに多くの所要時間がかかシ、作業性を
低下する欠点がある。This type of oven-type heating device is equipped with only a heating source 24b that only has the effect of increasing the temperature, similar to the above-mentioned one, so it is possible to raise the temperature inside the oven from a previously set high temperature state to a desired low temperature state. In order to lower the temperature, it takes much more time than in the case of increasing the temperature, which has the drawback of reducing work efficiency.
〔発明の目的〕
本発明は、被処理体が載置される加熱機構温度を、極め
て短時間に所定温度まで昇降温することができる半導体
基板加熱装置を提供することをその目的とするものであ
る。[Object of the Invention] An object of the present invention is to provide a semiconductor substrate heating device that can raise and lower the temperature of a heating mechanism on which an object to be processed is placed to a predetermined temperature in an extremely short period of time. be.
本発明は、加熱機構内に冷却機構を設けたことにより、
加熱部の温度を極めて短時間に所定温波１で昇降温でき
るようにした半導体基板加熱装置である。The present invention provides a cooling mechanism within the heating mechanism.
This is a semiconductor substrate heating device that can raise and lower the temperature of a heating part in a very short time using a predetermined temperature wave 1.
以］・、本発明の実施例について図面を参照して説明す
る。Embodiments of the present invention will be described below with reference to the drawings.
第３図（５）は、本発明の一実施例の側面図、同図（Ｂ
）は、同実施例の、正面図である。図中４０は、ヒータ
ー４１を内蔵したヒーターブロックであυ、加熱機構を
構成しているウヒーターブロノク４０上には、熱板４２
が載置されている。熱板４２ＶＪｃは、アベ収答溝４２
ｔｓが二本並列して形成されている。アーム収容溝４２
ａ（こは、搬送アーム４３が上下動及び前後進自在に収
容されている。搬送アーム４３は、上下前後進によって
ヒータープロ、り４０を経てその前後工程に被処理体４
４であるウニ・・（半導体基板）を搬送するようになっ
ている。ヒーターブロック４０には、冷却機構が内蔵さ
れている。冷却機構は、ヒーターブロック４０の底部に
配設された冷媒パイプ４５と、ヒーターブロック４０か
ら導出された冷媒・ぐイｆ４５の端部に取付けられた冷
媒開閉バルブ４６と、冷媒開閉バルブ４６を介して冷媒
・９イグ４５に接続された図示しない冷媒供給源とで構
成されている。冷媒開閉バルブ４６は、温度制御部４７
を介して熱板４２内に埋設された温度センサー４８に、
電気的に接続されている。FIG. 3(5) is a side view of one embodiment of the present invention, and FIG.
) is a front view of the same embodiment. In the figure, 40 is a heater block with a built-in heater 41, and a heating plate 42 is mounted on the heater block 40 constituting the heating mechanism.
is placed. The hot plate 42VJc has the Abe collection groove 42.
Two ts are formed in parallel. Arm accommodation groove 42
a (Here, a transport arm 43 is housed so as to be able to move up and down and back and forth. The transport arm 43 moves the object to be processed 4 through the heater roller 40 and back and forth processes by moving up and down and back and forth.
It is designed to transport sea urchins (semiconductor substrates). The heater block 40 has a built-in cooling mechanism. The cooling mechanism operates through a refrigerant pipe 45 disposed at the bottom of the heater block 40, a refrigerant on-off valve 46 attached to the end of the refrigerant pipe F45 led out from the heater block 40, and a refrigerant on-off valve 46. and a refrigerant supply source (not shown) connected to the refrigerant 9-ignition 45. The refrigerant opening/closing valve 46 is connected to the temperature control section 47
to the temperature sensor 48 embedded in the hot plate 42 via the
electrically connected.
而して、このように構成された半導体基板加熱装置４９
によれば、先ず、搬送アーム４３が駆動機構によって上
昇し、前工程から被処理体４４であるウェー・の供給を
受ける。次いで、ウェー・を保持した状態で搬送アーム
４３が搬送方向に沿って所定位置まで前進する。次いで
、搬送アーム４３は降下し、熱板４２上にウェハを載置
した後、搬送方向と反対に後方のウェハ供給位置まで戻
る。Thus, the semiconductor substrate heating device 49 configured in this manner
According to the method, first, the transport arm 43 is raised by a drive mechanism and receives the wafer, which is the object to be processed 44, from the previous process. Next, the transfer arm 43 moves forward to a predetermined position along the transfer direction while holding the wafer. Next, the transfer arm 43 descends, places the wafer on the hot plate 42, and then returns to the rear wafer supply position in the opposite direction to the transfer direction.
ヒーターブロック４０では温度制御部４７の信号を受け
てヒーター４１が熱板４２を所定温度まで加熱する。熱
板４２の加熱温度は、温度センサー４８によｐ検出され
る。温Ｋ １ｌｌＪ御部４７は、この温度センサー４８
の出力を受けて、所定の加熱信号をヒーター４１ｒて供
給し、熱板４２を所定温度まで正確に温度土丹させる。In the heater block 40, a heater 41 heats a hot plate 42 to a predetermined temperature in response to a signal from a temperature control section 47. The heating temperature of the hot plate 42 is detected by a temperature sensor 48. The temperature sensor 48
In response to the output, a predetermined heating signal is supplied to the heater 41r to accurately raise the temperature of the hot plate 42 to a predetermined temperature.
ウェハは、この熱板４２からの熱伝専を受けてベーキン
グ処理される。The wafer is subjected to a baking process by receiving heat transfer from the hot plate 42.
次（・価、ウェハのベーキング処理が終シ処理温度の低
いウェー・が加熱部に送られてくると、温度制御部４７
から所定の弁開度信号を冷媒開閉バルブ４６に供給し、
冷媒開閉バルブ４６の弁を所定量だけ開く、冷媒開閉バ
ルブ４６の弁が開くと、冷媒供給源から冷媒・やイノ４
５中に例えば水のような冷媒が循環する。その結果、熱
板４２の温度は、極めて速い速度で低下する。When the next wafer baking process is completed and the wafer with a low processing temperature is sent to the heating section, the temperature control section 47
supplies a predetermined valve opening degree signal to the refrigerant opening/closing valve 46,
The refrigerant on-off valve 46 is opened by a predetermined amount. When the refrigerant on-off valve 46 is opened, refrigerant is released from the refrigerant supply source.
A refrigerant, such as water, is circulated through the tube. As a result, the temperature of hot plate 42 decreases at an extremely rapid rate.
熱板４２の温度の降下速度は、温度センサー４８によっ
て熱板４２を温度を測定しながら、温度制御部４７によ
り冷媒開閉バルブ４６の弁の開度を調節して所定値に設
定する。The temperature drop rate of the hot plate 42 is set to a predetermined value by adjusting the opening degree of the refrigerant opening/closing valve 46 using the temperature control unit 47 while measuring the temperature of the hot plate 42 using the temperature sensor 48 .
このようにして、温度制御部４７により、加熱機構のヒ
ーター４１の昇温速度及び冷却機構による降温速度を制
御して、熱板４２の温度を極めて短い時間で、低温状態
から所望の高温状態に設定し、或は高温状態から所望の
低温状態に容易に設定することができる。その結果、作
業性を向上させることができるものである。In this way, the temperature control unit 47 controls the temperature increase rate of the heater 41 of the heating mechanism and the temperature decrease rate of the cooling mechanism to bring the temperature of the hot plate 42 from a low temperature state to a desired high temperature state in an extremely short time. or easily set from a high temperature state to a desired low temperature state. As a result, workability can be improved.
次に、本発明の他の実施例について第４図を参照して説
明する。Next, another embodiment of the present invention will be described with reference to FIG.
図中５０は、所定間隔で対設されたベルト駆動グーリー
５１に、被処理体５２を搬送するための搬送ベルト５３
を取付けた搬送機構である。In the figure, reference numeral 50 denotes a conveyor belt 53 for conveying the object to be processed 52 to belt drive gooleys 51 that are disposed opposite to each other at a predetermined interval.
This is a transport mechanism with a .
搬送機構５０の上方には、加熱部を搬送面に対向して加
熱機構５４が設けられている。加熱機構５４は、搬送面
に開口部を対向して設けたカバー５４ｔｈと、力・Ｚ−
５４ａ内に収芥された加熱源５４ｂと、加熱部の近傍に
取付けられた温度センサー５４ｃとで構成されている。A heating mechanism 54 is provided above the transport mechanism 50 with a heating section facing the transport surface. The heating mechanism 54 includes a cover 54th having openings facing each other on the conveyance surface, and a force/Z-
It is composed of a heating source 54b contained in a heating section 54a, and a temperature sensor 54c installed near the heating section.
カバー５４ａ内の上部には、加熱源５４ｂに対向して冷
媒・母イゾ５５が配置されている。冷媒・やイブ５５の
下面には、ノズル５５ａが多数個穿設されている。カバ
ー５４ｔｈから導出した冷媒・にイノ５５には、冷媒開
閉バルブ５６を介して冷媒供給源（図示せず）が接続さ
れている。冷媒開閉バルブ５６は、温度制御部（図示せ
ず）を介して温度センサー５４ｃに電気的に接続されて
いる。同図中、５４ ｄは、加熱機構５４のオーブンを
構成するカバー５４ａの下部力・ぐ−である。In the upper part of the cover 54a, a refrigerant/mother 55 is arranged facing the heat source 54b. A large number of nozzles 55a are bored in the lower surface of the refrigerant tube 55. A refrigerant supply source (not shown) is connected to the refrigerant 55 led out from the cover 54th via a refrigerant opening/closing valve 56. The refrigerant opening/closing valve 56 is electrically connected to the temperature sensor 54c via a temperature control section (not shown). In the figure, 54d is a lower part of the cover 54a that constitutes the oven of the heating mechanism 54.
このように構成された半導体基板加熱装置口によれば、
搬送ベルト５３の搬送面上に被処理体５２であるウェー
・を載置し、温度センサー５４Ｃによってカバー５４ａ
で囲まれたオーブン内の温度を測定しながら、温度制御
部から所定の信号を加熱源５４ｂに供給して、極めて・
短時間のうちにオーブン内の温度を低温状態からベーキ
ング処理温度１で上昇させることができる。ウェー・の
ベーキング処理が終わり次に低い処理湿度のつニー・−
が送られてくると、温度制御部から所定の弁開度信号を
冷媒開閉バルブ５６に供給し、その弁を開いて冷媒供給
源から冷媒・ぞイｆｓｓ内に冷媒ガスを供給する。供給
された冷媒ガ゛スは、冷媒パイプ５５のノズル５５ａか
らオーブン内に流出し、オーブン内の温度を一度設定さ
れた高温状態から、極めて速い降温速度で所定の低温状
態まで下げる。この際の降温速度Ｖよ、オーブン内の温
度を温度センサー５４ｃで測定し、その出力に応じて温
度制御部によセ冷媒開閉バルブ５６の弁開度を調整して
、容易に所定値に設定することかで゛きる。According to the semiconductor substrate heating device port configured in this way,
A wafer, which is the object to be processed 52, is placed on the conveying surface of the conveying belt 53, and the cover 54a is heated by the temperature sensor 54C.
While measuring the temperature inside the oven surrounded by
The temperature inside the oven can be raised from a low temperature state to baking temperature 1 in a short time. After the baking process of the wafer is completed, the wafer is then baked with a low processing humidity.
When the refrigerant gas is sent, a predetermined valve opening signal is supplied from the temperature control section to the refrigerant opening/closing valve 56, and the valve is opened to supply refrigerant gas from the refrigerant supply source into the refrigerant pipe fss. The supplied refrigerant gas flows into the oven from the nozzle 55a of the refrigerant pipe 55, and lowers the temperature inside the oven from the once set high temperature state to a predetermined low temperature state at an extremely rapid temperature drop rate. At this time, the temperature decreasing rate V is easily set to a predetermined value by measuring the temperature inside the oven with the temperature sensor 54c, and adjusting the valve opening degree of the refrigerant opening/closing valve 56 by the temperature control unit according to the output. All you can do is do it.
その結果、オーブン内のベーキング処理に必要な温度を
、極めて短い温度処理時間で、低温状態から高温状態に
設定し、或は、高温状態から低温状態に容易に設定して
、作業性を向上させることができる。As a result, the temperature required for baking in the oven can be easily set from a low temperature state to a high temperature state, or from a high temperature state to a low temperature state, in an extremely short temperature processing time, improving work efficiency. be able to.
なお、オーブン式の半導体基板加熱装置６０では、加熱
源５４ｂを搬送面の上方に設けだが。Note that in the oven-type semiconductor substrate heating device 60, the heating source 54b is provided above the transport surface.
下方に設けても良い。また、搬送機構５０を搬送ベルト
５３を採用したものとしたが、エアベアリング方式等積
々の搬送機構としても良いことは勿論である。It may be provided below. Moreover, although the conveyance mechanism 50 employs the conveyance belt 53, it is of course possible to use a multiple conveyance mechanism such as an air bearing system.
以上説明した如く、本発明に係る半導体基板加熱装置に
よれば、加熱機構の温度を極めて短時間に所定温度せで
昇降温することができるものである。As explained above, according to the semiconductor substrate heating apparatus according to the present invention, the temperature of the heating mechanism can be raised or lowered to a predetermined temperature in an extremely short time.
第１図囚は、従来の加熱装置の（ｌ’ｌ１１面図、同図
（Ｂ）は、同加熱装置の正面図、第２図は、従来のオー
ブン式加熱装置の側断面図、第３図（Ａ）は、本発明の
一実施例の側面図、同図（Ｂ）は、同実施例の正面図、
第４図は、本発明の他の実施例の側断面図である。
４０・・・ヒーターブロック、４ノ・・・ヒーター、４
２・・・熱板、４３・・・搬送アーム、４４・・・被処
理体、４５・・・冷媒パイプ、４６・・・冷媒開閉・々
ルブ、４７・・・〃１度制御部、４８川温度セフ ＠Ｊ
−−１４ｇ・・・半導体基板加熱装置、５ｏ・・・搬送
機構、５１・・・ベルト駆動ブーＩＪ−１ｓ ２川波処
理体、５３・・・搬送ベルト、５４・・・加熱機構、５
４ａ・・・カバー、５４ｈ・・・加熱源、ｓ ４ ｃ・
・・温度センサー、５４ｄ・・・下部カバー、５５・・
・冷媒・母イブ、５６・・・冷媒開閉バルブ、６０ 、
、、半導体基板加熱装置。Figure 1 is a front view of a conventional heating device, Figure (B) is a front view of the heating device, Figure 2 is a side sectional view of a conventional oven-type heating device, and Figure 3 is a side sectional view of a conventional oven-type heating device. Figure (A) is a side view of one embodiment of the present invention, Figure (B) is a front view of the same embodiment,
FIG. 4 is a side sectional view of another embodiment of the invention. 40... Heater block, 4... Heater, 4
2... Hot plate, 43... Transfer arm, 44... Processed object, 45... Refrigerant pipe, 46... Refrigerant opening/closing valve, 47... 1 degree control section, 48 River temperature safety @J
--14g...Semiconductor substrate heating device, 5o...Transportation mechanism, 51...Belt drive boob IJ-1s 2 river wave processing body, 53...Transportation belt, 54...Heating mechanism, 5
4a...Cover, 54h...Heating source, s 4 c.
...Temperature sensor, 54d...Lower cover, 55...
・Refrigerant/mother Eve, 56... Refrigerant opening/closing valve, 60,
,,Semiconductor substrate heating device.
Claims (1)
て設けられた加熱機構と、該加熱機構に内蔵された冷却
機構と、該加熱機構に設けられた加熱温度測定用の温度
センサーと、該温度センサーと前記加熱機構及び前記冷
却機構に電気的に接続された温度制御部とを・具備する
ことを特徴とする半導体基板加熱装置。A transport mechanism for the object to be processed, and the transport a! a heating mechanism provided close to the conveying surface of the image; a cooling mechanism built into the heating mechanism; a temperature sensor for measuring heating temperature provided in the heating mechanism; the temperature sensor and the heating mechanism; A semiconductor substrate heating apparatus comprising: a temperature control section electrically connected to the cooling mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17031982A JPS5961027A (en) | 1982-09-29 | 1982-09-29 | Semiconductor substrate heating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17031982A JPS5961027A (en) | 1982-09-29 | 1982-09-29 | Semiconductor substrate heating apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5961027A true JPS5961027A (en) | 1984-04-07 |
Family
ID=15902749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17031982A Pending JPS5961027A (en) | 1982-09-29 | 1982-09-29 | Semiconductor substrate heating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961027A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS625635U (en) * | 1985-06-26 | 1987-01-14 | ||
| JPS62172150U (en) * | 1986-04-02 | 1987-10-31 | ||
| JPH01307223A (en) * | 1988-06-06 | 1989-12-12 | Matsushita Electric Ind Co Ltd | Hot plate for resist hardening |
| WO1998046059A1 (en) * | 1997-04-04 | 1998-10-15 | Unisys Corporation | Temperature control system for an electronic device |
| KR100244739B1 (en) * | 1994-01-21 | 2000-03-02 | 베노 지.센드 | Temperature control apparatus and method with recirculated coolant |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51124839A (en) * | 1975-04-25 | 1976-10-30 | Hitachi Ltd | Infrared ray baking furnace |
| JPS5473578A (en) * | 1977-11-24 | 1979-06-12 | Toshiba Corp | Pattern exposure method of semiconductor substrate and pattern exposure apparatus |
| JPS54149471A (en) * | 1978-05-16 | 1979-11-22 | Nec Corp | Object moving unit |
| JPS54149586A (en) * | 1978-05-17 | 1979-11-22 | Hitachi Ltd | Mask aligner |
-
1982
- 1982-09-29 JP JP17031982A patent/JPS5961027A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51124839A (en) * | 1975-04-25 | 1976-10-30 | Hitachi Ltd | Infrared ray baking furnace |
| JPS5473578A (en) * | 1977-11-24 | 1979-06-12 | Toshiba Corp | Pattern exposure method of semiconductor substrate and pattern exposure apparatus |
| JPS54149471A (en) * | 1978-05-16 | 1979-11-22 | Nec Corp | Object moving unit |
| JPS54149586A (en) * | 1978-05-17 | 1979-11-22 | Hitachi Ltd | Mask aligner |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS625635U (en) * | 1985-06-26 | 1987-01-14 | ||
| JPH0234822Y2 (en) * | 1985-06-26 | 1990-09-19 | ||
| JPS62172150U (en) * | 1986-04-02 | 1987-10-31 | ||
| JPH01307223A (en) * | 1988-06-06 | 1989-12-12 | Matsushita Electric Ind Co Ltd | Hot plate for resist hardening |
| KR100244739B1 (en) * | 1994-01-21 | 2000-03-02 | 베노 지.센드 | Temperature control apparatus and method with recirculated coolant |
| WO1998046059A1 (en) * | 1997-04-04 | 1998-10-15 | Unisys Corporation | Temperature control system for an electronic device |
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