JPS595979Y2 - Package for microwave equipment - Google Patents

Package for microwave equipment

Info

Publication number
JPS595979Y2
JPS595979Y2 JP18218778U JP18218778U JPS595979Y2 JP S595979 Y2 JPS595979 Y2 JP S595979Y2 JP 18218778 U JP18218778 U JP 18218778U JP 18218778 U JP18218778 U JP 18218778U JP S595979 Y2 JPS595979 Y2 JP S595979Y2
Authority
JP
Japan
Prior art keywords
package
conductive film
insulating frame
insulating
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18218778U
Other languages
Japanese (ja)
Other versions
JPS5599155U (en
Inventor
栄志 山村
幸宏 竹内
隆雄 島
紀雄 日高
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP18218778U priority Critical patent/JPS595979Y2/en
Publication of JPS5599155U publication Critical patent/JPS5599155U/ja
Application granted granted Critical
Publication of JPS595979Y2 publication Critical patent/JPS595979Y2/en
Expired legal-status Critical Current

Links

Landscapes

  • Microwave Amplifiers (AREA)
  • Waveguide Connection Structure (AREA)

Description

【考案の詳細な説明】 本考案はマイクロ波増幅器などのマイクロ波装置用のパ
ッケージに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a package for a microwave device such as a microwave amplifier.

一般にマイクロ波増幅器などを収納するパツケ一ジには
人出力用や直流バイアス電圧を印加するための複数のリ
ード端子が設けられている。
Generally, a package that houses a microwave amplifier or the like is provided with a plurality of lead terminals for human output and for applying a DC bias voltage.

これら複数のリード端子のうち、上記バイアス電圧を印
加するための直流端子については、パッケージ内に収納
される増幅器がバランス型増幅器の場合には同じ回路構
或の増幅器が二系統設けられるために直流端子を二本に
して、これに同電位の電圧を印加する場合がある。
Among these multiple lead terminals, for the DC terminal for applying the bias voltage, if the amplifier housed in the package is a balanced amplifier, two systems of amplifiers with the same circuit configuration are provided, so the DC terminal is There are cases where two terminals are used and voltages of the same potential are applied to them.

このような場合に従来は一つの電源端子と異なる2つの
直流端子をそれぞれワイヤボンデイングにより接続して
同電位の電圧をこれらの直流端子に印加していたので、
ボンデイング個所が増加するために信頼性の低下や製造
工数が増加し、コストが上昇するという欠点があった。
In such cases, conventionally one power supply terminal and two different DC terminals were connected by wire bonding and voltages of the same potential were applied to these DC terminals.
Since the number of bonding points increases, reliability decreases, manufacturing man-hours increase, and costs increase.

本考案は従来のこのような欠点を解決し、簡単な製造工
程によりボンデイング個所を減少させ、信頼性の向上を
図ることを目的とするものであり、その特徴は、金属体
と、該金属基体上に設けられた絶縁基板と、該絶縁基板
上に設けられた絶縁わくと、該絶縁基板上の該絶縁わく
外に設けられたリード端子と、該絶縁基板上に設けられ
該リード端子と接続されると共に該絶縁わく下を通って
該絶縁わくの内側に達する導電膜を具備するマイクロ波
装置用パッケージにおいて該絶縁わくに導電膜パターン
を設け、該導電パターンを介して、該導電膜のうち所望
の導電膜間を電気的に接続したことにある。
The present invention aims to solve these conventional drawbacks, reduce the number of bonding points through a simple manufacturing process, and improve reliability. an insulating substrate provided above, an insulating frame provided on the insulating substrate, a lead terminal provided outside the insulating frame on the insulating substrate, and a connection to the lead terminal provided on the insulating substrate. In a package for a microwave device, a conductive film is provided on the insulating frame, and a conductive film pattern is provided on the insulating frame, and a part of the conductive film is passed through the insulating frame to the inside of the insulating frame. The purpose is to electrically connect desired conductive films.

以下図面を参照して本考案の1実施例を説明する。An embodiment of the present invention will be described below with reference to the drawings.

図は本考案によるマイクロ波装置用パッケージのl実施
例の外観図である。
The figure is an external view of an embodiment of a package for a microwave device according to the present invention.

取付け用ネジ孔2,2′を有する金属基体1の上に絶縁
基板3を設けその上に絶縁わく4を設ける。
An insulating substrate 3 is provided on a metal base 1 having mounting screw holes 2, 2', and an insulating frame 4 is provided thereon.

絶縁基板3には入力端子6、出力端子6′、直流バイア
ス用端子5.5’,7.7’が絶縁わく4の外側から絶
縁わく4の下を通り内側に至る導電膜11,12.13
とそれぞれ接続されており、絶縁基板3の内側に設けら
れた集積回路基板収容部14(金属体1上)に収容され
た図示しない基板上の回路と導電膜11,12.13は
それぞれワイヤボンデイングにより接続される。
On the insulating substrate 3, an input terminal 6, an output terminal 6', and DC bias terminals 5.5', 7.7' are provided with conductive films 11, 12. 13
The circuits and conductive films 11, 12, and 13 on a substrate (not shown) accommodated in an integrated circuit board accommodating portion 14 (above the metal body 1) provided inside the insulating substrate 3 are connected to each other by wire bonding. Connected by

絶縁わくの上面および側面には斜線で示すように導電膜
パターン8,9.10が設けられ、導電膜パターン8と
直流バイアス端子に接続される導電膜11,3とは絶縁
わく4の内側側面に設けられた導電膜パターン9,10
により接続されている。
Conductive film patterns 8, 9, and 10 are provided on the top and side surfaces of the insulating frame as indicated by diagonal lines, and the conductive film patterns 8 and conductive films 11, 3 connected to the DC bias terminal are located on the inner side surface of the insulating frame 4. Conductive film patterns 9 and 10 provided on
connected by.

また、端子5’,6’,7’側についても同様の構造と
なっている。
Further, the terminals 5', 6', and 7' have a similar structure.

従って例えば1個の電源端子が端子5に最も近く配置さ
れている場合に直流バイアス端子5と1個の電源端子と
をボンテ゛イングするだけで、導電膜11および導電膜
パターン9.8を介して他の端子7のみならず端子5’
,7’にも同じ電圧が供給されたのと同じになる。
Therefore, for example, if one power supply terminal is placed closest to the terminal 5, simply bonding the DC bias terminal 5 and one power supply terminal will connect the other power supply terminal to the other terminal via the conductive film 11 and the conductive film pattern 9.8. Not only terminal 7 but also terminal 5'
, 7' are also supplied with the same voltage.

尚、上記実施例では導電膜パターン8を絶縁わく4の上
面に設けたが、絶縁わくの側面に設けてもよいことは明
らかである。
In the above embodiment, the conductive film pattern 8 is provided on the upper surface of the insulating frame 4, but it is clear that it may be provided on the side surface of the insulating frame.

以上説明した通り、本考案によれば絶縁わくに各端子を
接続するための導電膜パターンを設けることにより、ボ
ンデイング個所が減少するので製造が容易になり、信頼
性が向上すると共に上記実施例のように端子5をボンデ
イングした場合には端子7を設けなくともよいというよ
うに端子数の減少を図ることができる。
As explained above, according to the present invention, by providing a conductive film pattern for connecting each terminal to an insulating frame, the number of bonding points is reduced, making manufacturing easier and improving reliability. When the terminals 5 are bonded in this way, the number of terminals can be reduced so that the terminals 7 do not need to be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本考案の一実施例を示すマイクロ波装置用パッケー
ジの外観図である。 図においては、1は金属基体、3は絶縁基板、4は絶縁
わ< 、5.5’,7.7’は直流バイアス用端子、8
,9.10は導電膜パターンを示す。
The figure is an external view of a package for a microwave device showing an embodiment of the present invention. In the figure, 1 is a metal base, 3 is an insulating substrate, 4 is an insulating board, 5.5', 7.7' are DC bias terminals, 8
, 9.10 shows a conductive film pattern.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 金属基体と該金属基体上に設けられた絶縁基板と、該絶
縁基板上に設けられた絶縁わくと、該絶縁基板上の該絶
縁わく外に設けられたリード端子と、該絶縁基板上に設
けられ該リード端子と接続されると共に、該絶縁わく下
を通って該絶縁わくの内側に達する導電膜を具備するマ
イクロ波装置用パッケージにおいて、該絶縁わくに導電
膜パターンを設け、該導電パターンを介して導電膜のう
ち所望の導電膜間を電気的に接続したことを特徴とする
マイクロ波装置用パッケージ。
A metal base, an insulating substrate provided on the metal base, an insulating frame provided on the insulating substrate, a lead terminal provided outside the insulating frame on the insulating substrate, and a lead terminal provided on the insulating substrate. In a package for a microwave device, the microwave device package is provided with a conductive film which is connected to the lead terminal and passes under the insulating frame to the inside of the insulating frame, wherein the insulating frame is provided with a conductive film pattern; A package for a microwave device, characterized in that desired conductive films among the conductive films are electrically connected through the conductive film.
JP18218778U 1978-12-28 1978-12-28 Package for microwave equipment Expired JPS595979Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18218778U JPS595979Y2 (en) 1978-12-28 1978-12-28 Package for microwave equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18218778U JPS595979Y2 (en) 1978-12-28 1978-12-28 Package for microwave equipment

Publications (2)

Publication Number Publication Date
JPS5599155U JPS5599155U (en) 1980-07-10
JPS595979Y2 true JPS595979Y2 (en) 1984-02-23

Family

ID=29193866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18218778U Expired JPS595979Y2 (en) 1978-12-28 1978-12-28 Package for microwave equipment

Country Status (1)

Country Link
JP (1) JPS595979Y2 (en)

Also Published As

Publication number Publication date
JPS5599155U (en) 1980-07-10

Similar Documents

Publication Publication Date Title
JPH022842U (en)
JPS595979Y2 (en) Package for microwave equipment
JPS5834758Y2 (en) Package for microwave equipment
JPS58131638U (en) Hybrid integrated circuit device
JPS6027441U (en) Hybrid integrated circuit device
JPS6430848U (en)
JPH05211279A (en) Hybrid integrated circuit
JPS62108577A (en) High-frequency grounding and self-biassing method of fet for high frequency
JPS6398678U (en)
JPS60129157U (en) Substrate for hybrid integrated circuits
JPS5869947U (en) microwave semiconductor circuit
JPH0345649U (en)
JPS63115227U (en)
JPS60105291A (en) Hybrid integrated circuit device
JPS61151348U (en)
JPS5998672U (en) hybrid integrated circuit
JPS646097U (en)
JPS6343430U (en)
JPH0215765U (en)
JPS62180963U (en)
JPS6096846U (en) Semiconductor integrated circuit device
JPS59123348U (en) Hybrid integrated circuit device
JPS60149166U (en) Hybrid integrated circuit device
JPH0286133U (en)
JPS5853163U (en) semiconductor equipment