JPS62180963U - - Google Patents
Info
- Publication number
- JPS62180963U JPS62180963U JP1986068904U JP6890486U JPS62180963U JP S62180963 U JPS62180963 U JP S62180963U JP 1986068904 U JP1986068904 U JP 1986068904U JP 6890486 U JP6890486 U JP 6890486U JP S62180963 U JPS62180963 U JP S62180963U
- Authority
- JP
- Japan
- Prior art keywords
- silicon diaphragm
- tape substrate
- input
- adhesive layer
- established
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000012790 adhesive layer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Wire Bonding (AREA)
Description
第１図：本考案による一実施例を示す図。第２
図：実施例（第１図）に用いられているテープ基
板の平面図。第３図：実施例（第１図）に用いら
れているテープ基板の断面図。第４図：シリコン
ダイヤフラムと台座とを接合した段階でテープ基
板と接合した図。第５図：従来例を示す図。
ここに、１……シリコンダイヤフラム、２……
パツド、３……外枠、４……入出力端子、５……
外部回路との導通用パターン部、６……ワイヤー
ボンデイング線、７……台座、８……接着層、９
……保護ケース、１０……接着層、１１……シリ
コンダイヤフラム、１２……パツド、１３……外
枠、１４……入出力端子、１５……外部回路との
導通用パターン部、１６……台座、１７……接着
層、１８……保護ケース、１９……接着層、２０
……テープ基板、２１……ハンダ付部、２２……
ベースフイルム、２３……導体パターン、２４…
…接着層、２５……フインガーリード、２６……
バンプ部、２７……導通パターン端、２８……穴
部、２９……導通パターン上のパツド。
FIG. 1: A diagram showing an embodiment of the present invention. Second
Figure: A plan view of the tape substrate used in the example (Figure 1). FIG. 3: A cross-sectional view of the tape substrate used in the example (FIG. 1). Figure 4: A diagram of the silicon diaphragm and the pedestal being joined to the tape substrate. FIG. 5: A diagram showing a conventional example. Here, 1...silicon diaphragm, 2...
Pad, 3...outer frame, 4...input/output terminal, 5...
Pattern part for conduction with external circuit, 6... Wire bonding line, 7... Pedestal, 8... Adhesive layer, 9
... Protective case, 10 ... Adhesive layer, 11 ... Silicon diaphragm, 12 ... Pad, 13 ... Outer frame, 14 ... Input/output terminal, 15 ... Pattern part for continuity with external circuit, 16 ... Pedestal, 17... Adhesive layer, 18... Protective case, 19... Adhesive layer, 20
... Tape board, 21 ... Soldering part, 22 ...
Base film, 23... Conductor pattern, 24...
... Adhesive layer, 25 ... Finger lead, 26 ...
Bump portion, 27... end of conductive pattern, 28... hole, 29... pad on conductive pattern.
Claims (1)
ツジを形成してなる半導体圧力センサーにおいて
、前記シリコンダイヤフラムと、センサーの入出
力端子との電気的導通をテープ基板によりとつた
ことを特徴とする半導体圧力センサーの実装構造
。 A semiconductor pressure sensor mounting structure comprising a bridge formed by a diffused resistance on a silicon diaphragm, characterized in that electrical continuity between the silicon diaphragm and input/output terminals of the sensor is established by a tape substrate. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986068904U JPS62180963U (en) | 1986-05-08 | 1986-05-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986068904U JPS62180963U (en) | 1986-05-08 | 1986-05-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62180963U true JPS62180963U (en) | 1987-11-17 |
Family
ID=30909146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986068904U Pending JPS62180963U (en) | 1986-05-08 | 1986-05-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62180963U (en) |
-
1986
- 1986-05-08 JP JP1986068904U patent/JPS62180963U/ja active Pending
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