JPS595972Y2 - プラズマエツチング装置 - Google Patents

プラズマエツチング装置

Info

Publication number
JPS595972Y2
JPS595972Y2 JP1978137866U JP13786678U JPS595972Y2 JP S595972 Y2 JPS595972 Y2 JP S595972Y2 JP 1978137866 U JP1978137866 U JP 1978137866U JP 13786678 U JP13786678 U JP 13786678U JP S595972 Y2 JPS595972 Y2 JP S595972Y2
Authority
JP
Japan
Prior art keywords
etching
electrode
gas
semiconductor substrate
reaction tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1978137866U
Other languages
English (en)
Japanese (ja)
Other versions
JPS54101978U (enExample
Inventor
昭次 間所
弘之 武藤
裕夫 溝上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP1978137866U priority Critical patent/JPS595972Y2/ja
Publication of JPS54101978U publication Critical patent/JPS54101978U/ja
Application granted granted Critical
Publication of JPS595972Y2 publication Critical patent/JPS595972Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP1978137866U 1978-10-09 1978-10-09 プラズマエツチング装置 Expired JPS595972Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1978137866U JPS595972Y2 (ja) 1978-10-09 1978-10-09 プラズマエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1978137866U JPS595972Y2 (ja) 1978-10-09 1978-10-09 プラズマエツチング装置

Publications (2)

Publication Number Publication Date
JPS54101978U JPS54101978U (enExample) 1979-07-18
JPS595972Y2 true JPS595972Y2 (ja) 1984-02-23

Family

ID=29110476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1978137866U Expired JPS595972Y2 (ja) 1978-10-09 1978-10-09 プラズマエツチング装置

Country Status (1)

Country Link
JP (1) JPS595972Y2 (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661747A (en) * 1969-08-11 1972-05-09 Bell Telephone Labor Inc Method for etching thin film materials by direct cathodic back sputtering
JPS48103433A (enExample) * 1972-04-17 1973-12-25
JPS4957775A (enExample) * 1972-10-02 1974-06-05

Also Published As

Publication number Publication date
JPS54101978U (enExample) 1979-07-18

Similar Documents

Publication Publication Date Title
CN101692423B (zh) 等离子体蚀刻方法
US8383521B2 (en) Substrate processing method
US5415728A (en) Method of performing plain etching treatment and apparatus therefor
JP2000173993A (ja) プラズマ処理装置およびエッチング方法
TW201145384A (en) Semiconductor device manufacturing method and plasma etching apparatus
JPS627268B2 (enExample)
JP4652140B2 (ja) プラズマエッチング方法、制御プログラム、コンピュータ記憶媒体
CN100362632C (zh) 干蚀刻方法
JP3164195B2 (ja) マイクロ波プラズマ処理装置
TW202422647A (zh) 基板處理方法及基板處理裝置
JPS595972Y2 (ja) プラズマエツチング装置
US6986851B2 (en) Dry developing method
JPH06104098A (ja) マイクロ波プラズマ処理装置
WO1997027622A1 (fr) Appareil de fabrication de semiconducteurs
JP2967681B2 (ja) マイクロ波プラズマ処理装置
JP3164188B2 (ja) プラズマ処理装置
JPH05326451A (ja) プラズマ処理装置被処理基板固定方法
JP7714633B2 (ja) 基板処理方法及び基板処理装置
KR20050010208A (ko) 유도결합 플라즈마 식각 장치
JP2005064120A (ja) プラズマ処理装置およびプラズマ処理方法
JP3251439B2 (ja) エッチング方法
JPS6221225A (ja) レジストのアツシング方法
JP2906505B2 (ja) マイクロ波プラズマ処理装置
KR20000001982A (ko) 반도체 웨이퍼 식각장비의 듀얼바이어스정전척
JPH0220021A (ja) 半導体装置の制造方法