JPS5954694A - 単結晶成長方法 - Google Patents
単結晶成長方法Info
- Publication number
- JPS5954694A JPS5954694A JP16611082A JP16611082A JPS5954694A JP S5954694 A JPS5954694 A JP S5954694A JP 16611082 A JP16611082 A JP 16611082A JP 16611082 A JP16611082 A JP 16611082A JP S5954694 A JPS5954694 A JP S5954694A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- single crystal
- growth
- melt
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16611082A JPS5954694A (ja) | 1982-09-24 | 1982-09-24 | 単結晶成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16611082A JPS5954694A (ja) | 1982-09-24 | 1982-09-24 | 単結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5954694A true JPS5954694A (ja) | 1984-03-29 |
JPH0420875B2 JPH0420875B2 (enrdf_load_stackoverflow) | 1992-04-07 |
Family
ID=15825202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16611082A Granted JPS5954694A (ja) | 1982-09-24 | 1982-09-24 | 単結晶成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5954694A (enrdf_load_stackoverflow) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5043949A (enrdf_load_stackoverflow) * | 1973-07-16 | 1975-04-21 | ||
JPS5560096A (en) * | 1978-10-26 | 1980-05-06 | Ricoh Co Ltd | Crystal diameter controlling method with laser beam |
-
1982
- 1982-09-24 JP JP16611082A patent/JPS5954694A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5043949A (enrdf_load_stackoverflow) * | 1973-07-16 | 1975-04-21 | ||
JPS5560096A (en) * | 1978-10-26 | 1980-05-06 | Ricoh Co Ltd | Crystal diameter controlling method with laser beam |
Also Published As
Publication number | Publication date |
---|---|
JPH0420875B2 (enrdf_load_stackoverflow) | 1992-04-07 |
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