JPS5560096A - Crystal diameter controlling method with laser beam - Google Patents

Crystal diameter controlling method with laser beam

Info

Publication number
JPS5560096A
JPS5560096A JP13105878A JP13105878A JPS5560096A JP S5560096 A JPS5560096 A JP S5560096A JP 13105878 A JP13105878 A JP 13105878A JP 13105878 A JP13105878 A JP 13105878A JP S5560096 A JPS5560096 A JP S5560096A
Authority
JP
Japan
Prior art keywords
crystal
diameter
laser beam
mirror
temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13105878A
Other languages
Japanese (ja)
Inventor
Koichi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP13105878A priority Critical patent/JPS5560096A/en
Publication of JPS5560096A publication Critical patent/JPS5560096A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To make the diameter of a single crystal constant by detecting the diameter of a growing single crystal with a laser beam and controlling it when the crystal is pulled from a melt with a seed crystal.
CONSTITUTION: Beam 15 emitted from laser beam source 8, i.e. laser beam 15 is contracted with beam expander 16 and divided into two parallel beams at an interval of a desired crystal diameter with half-mirror 10 and mirror 9. The beams are received by photoreceptors 11, 11, and the diameter of a single crystal is made constant by raising and dropping the temp. as the diameter becomes larger and smaller, respectively. Since this temp. control depends on crystal components, a program of (crystal fatting rate)-(temp. rise) is formed every crystal. In order to pass through beam 15, small openings are made in heat insulating tube 17 and after-heater 18. Mirror 9, half-mirror 10 and two photoreceptors 11 are parallelly movable so that a desired crystal diameter is obtd.
COPYRIGHT: (C)1980,JPO&Japio
JP13105878A 1978-10-26 1978-10-26 Crystal diameter controlling method with laser beam Pending JPS5560096A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13105878A JPS5560096A (en) 1978-10-26 1978-10-26 Crystal diameter controlling method with laser beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13105878A JPS5560096A (en) 1978-10-26 1978-10-26 Crystal diameter controlling method with laser beam

Publications (1)

Publication Number Publication Date
JPS5560096A true JPS5560096A (en) 1980-05-06

Family

ID=15049017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13105878A Pending JPS5560096A (en) 1978-10-26 1978-10-26 Crystal diameter controlling method with laser beam

Country Status (1)

Country Link
JP (1) JPS5560096A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954694A (en) * 1982-09-24 1984-03-29 Fujitsu Ltd Method for growth of single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954694A (en) * 1982-09-24 1984-03-29 Fujitsu Ltd Method for growth of single crystal
JPH0420875B2 (en) * 1982-09-24 1992-04-07 Fujitsu Ltd

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