JPS5952882A - 接合型電界効果トランジスタ - Google Patents

接合型電界効果トランジスタ

Info

Publication number
JPS5952882A
JPS5952882A JP57164666A JP16466682A JPS5952882A JP S5952882 A JPS5952882 A JP S5952882A JP 57164666 A JP57164666 A JP 57164666A JP 16466682 A JP16466682 A JP 16466682A JP S5952882 A JPS5952882 A JP S5952882A
Authority
JP
Japan
Prior art keywords
region
isolation region
upper gate
field effect
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57164666A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0473301B2 (enrdf_load_stackoverflow
Inventor
Mitsuo Kishimoto
岸本　光雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP57164666A priority Critical patent/JPS5952882A/ja
Publication of JPS5952882A publication Critical patent/JPS5952882A/ja
Publication of JPH0473301B2 publication Critical patent/JPH0473301B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57164666A 1982-09-20 1982-09-20 接合型電界効果トランジスタ Granted JPS5952882A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57164666A JPS5952882A (ja) 1982-09-20 1982-09-20 接合型電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57164666A JPS5952882A (ja) 1982-09-20 1982-09-20 接合型電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5952882A true JPS5952882A (ja) 1984-03-27
JPH0473301B2 JPH0473301B2 (enrdf_load_stackoverflow) 1992-11-20

Family

ID=15797509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57164666A Granted JPS5952882A (ja) 1982-09-20 1982-09-20 接合型電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5952882A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248567A (ja) * 1985-04-26 1986-11-05 Matsushita Electronics Corp 接合型電界効果トランジスタ
US5248626A (en) * 1992-08-28 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating self-aligned gate diffused junction field effect transistor
US5895939A (en) * 1995-07-20 1999-04-20 Fuji Electric Co., Ltd. Silicon carbide field effect transistor with increased avalanche withstand capability
US6034385A (en) * 1995-12-22 2000-03-07 Siemens Aktiengesellschaft Current-limiting semiconductor configuration
US6232625B1 (en) * 1997-06-24 2001-05-15 Siced Electronics Development Gmbh & Co. Kg Semiconductor configuration and use thereof
JP2001522528A (ja) * 1997-04-25 2001-11-13 シーメンス アクチエンゲゼルシヤフト 特に短絡の際に交流電流を制限するための装置
JP2002204644A (ja) * 2001-01-11 2002-07-23 Sekisui Chem Co Ltd コウモリの侵入防御装置及び建物ユニット

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248567A (ja) * 1985-04-26 1986-11-05 Matsushita Electronics Corp 接合型電界効果トランジスタ
US5248626A (en) * 1992-08-28 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating self-aligned gate diffused junction field effect transistor
US5895939A (en) * 1995-07-20 1999-04-20 Fuji Electric Co., Ltd. Silicon carbide field effect transistor with increased avalanche withstand capability
US6034385A (en) * 1995-12-22 2000-03-07 Siemens Aktiengesellschaft Current-limiting semiconductor configuration
JP2001522528A (ja) * 1997-04-25 2001-11-13 シーメンス アクチエンゲゼルシヤフト 特に短絡の際に交流電流を制限するための装置
US6232625B1 (en) * 1997-06-24 2001-05-15 Siced Electronics Development Gmbh & Co. Kg Semiconductor configuration and use thereof
JP2002204644A (ja) * 2001-01-11 2002-07-23 Sekisui Chem Co Ltd コウモリの侵入防御装置及び建物ユニット

Also Published As

Publication number Publication date
JPH0473301B2 (enrdf_load_stackoverflow) 1992-11-20

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