JPS5948933A - 半導体不揮発性記憶装置の検査方法 - Google Patents

半導体不揮発性記憶装置の検査方法

Info

Publication number
JPS5948933A
JPS5948933A JP57159232A JP15923282A JPS5948933A JP S5948933 A JPS5948933 A JP S5948933A JP 57159232 A JP57159232 A JP 57159232A JP 15923282 A JP15923282 A JP 15923282A JP S5948933 A JPS5948933 A JP S5948933A
Authority
JP
Japan
Prior art keywords
transistors
chip
floating
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57159232A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6229903B2 (enExample
Inventor
Shigekazu Ihayazaka
伊早坂　茂和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57159232A priority Critical patent/JPS5948933A/ja
Priority to US06/530,667 priority patent/US4607219A/en
Publication of JPS5948933A publication Critical patent/JPS5948933A/ja
Publication of JPS6229903B2 publication Critical patent/JPS6229903B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP57159232A 1982-09-13 1982-09-13 半導体不揮発性記憶装置の検査方法 Granted JPS5948933A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57159232A JPS5948933A (ja) 1982-09-13 1982-09-13 半導体不揮発性記憶装置の検査方法
US06/530,667 US4607219A (en) 1982-09-13 1983-09-09 Method of inspecting semiconductor non-volatile memory devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57159232A JPS5948933A (ja) 1982-09-13 1982-09-13 半導体不揮発性記憶装置の検査方法

Publications (2)

Publication Number Publication Date
JPS5948933A true JPS5948933A (ja) 1984-03-21
JPS6229903B2 JPS6229903B2 (enExample) 1987-06-29

Family

ID=15689223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57159232A Granted JPS5948933A (ja) 1982-09-13 1982-09-13 半導体不揮発性記憶装置の検査方法

Country Status (2)

Country Link
US (1) US4607219A (enExample)
JP (1) JPS5948933A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5469394A (en) * 1993-03-17 1995-11-21 Fujitsu Limited Nonvolatile semiconductor memory device having a status register and test method for the same
CN119199427A (zh) * 2024-10-31 2024-12-27 南方电网科学研究院有限责任公司 一种电缆绝缘评估方法、装置、电子设备及存储介质

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4719411A (en) * 1985-05-13 1988-01-12 California Institute Of Technology Addressable test matrix for measuring analog transfer characteristics of test elements used for integrated process control and device evaluation
DE3931495C2 (de) * 1989-09-21 1997-06-26 Itt Ind Gmbh Deutsche Verfahren zur "fließenden" Feinklassifizierung von Kapazitätsdioden
JPH0480939A (ja) * 1990-07-24 1992-03-13 Hitachi Ltd 半導体集積回路装置の製造方法
JPH0442402U (enExample) * 1990-08-10 1992-04-10
US5219765A (en) * 1990-09-12 1993-06-15 Hitachi, Ltd. Method for manufacturing a semiconductor device including wafer aging, probe inspection, and feeding back the results of the inspection to the device fabrication process
US5700698A (en) * 1995-07-10 1997-12-23 Advanced Micro Devices, Inc. Method for screening non-volatile memory and programmable logic devices
JP3610887B2 (ja) * 2000-07-03 2005-01-19 富士通株式会社 ウエハレベル半導体装置の製造方法及び半導体装置
ATE291220T1 (de) * 2001-05-29 2005-04-15 Em Microelectronic Marin Sa Elektronische vorrichtung und verfahren zur temperaturüberwachung eines mediums
JP2006210718A (ja) * 2005-01-28 2006-08-10 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP7199817B2 (ja) 2018-03-16 2023-01-06 矢崎総業株式会社 電池パック
KR102574922B1 (ko) * 2021-04-30 2023-09-06 넥스콘테크놀러지 주식회사 배터리 팩 및 이의 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379259A (en) * 1980-03-12 1983-04-05 National Semiconductor Corporation Process of performing burn-in and parallel functional testing of integrated circuit memories in an environmental chamber

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5469394A (en) * 1993-03-17 1995-11-21 Fujitsu Limited Nonvolatile semiconductor memory device having a status register and test method for the same
US5566386A (en) * 1993-03-17 1996-10-15 Fujitsu Limited Nonvolatile semiconductor memory device having a status register and test method for the same
US5592427A (en) * 1993-03-17 1997-01-07 Fujitsu Limited Semiconductor memory having a sense amplifier with load transistors having different load characteristics
CN119199427A (zh) * 2024-10-31 2024-12-27 南方电网科学研究院有限责任公司 一种电缆绝缘评估方法、装置、电子设备及存储介质
CN119199427B (zh) * 2024-10-31 2025-10-28 南方电网科学研究院有限责任公司 一种电缆绝缘评估方法、装置、电子设备及存储介质

Also Published As

Publication number Publication date
JPS6229903B2 (enExample) 1987-06-29
US4607219A (en) 1986-08-19

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