JPS5945443A - クロム・マスクの製造方法 - Google Patents
クロム・マスクの製造方法Info
- Publication number
- JPS5945443A JPS5945443A JP58102945A JP10294583A JPS5945443A JP S5945443 A JPS5945443 A JP S5945443A JP 58102945 A JP58102945 A JP 58102945A JP 10294583 A JP10294583 A JP 10294583A JP S5945443 A JPS5945443 A JP S5945443A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- pattern
- etching
- negative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title description 8
- 238000000034 method Methods 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 102100032392 Circadian-associated transcriptional repressor Human genes 0.000 claims description 6
- 101710130150 Circadian-associated transcriptional repressor Proteins 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 210000004709 eyebrow Anatomy 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 235000014121 butter Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 2
- OSVXSBDYLRYLIG-UHFFFAOYSA-N dioxidochlorine(.) Chemical compound O=Cl=O OSVXSBDYLRYLIG-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical group ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 239000004155 Chlorine dioxide Substances 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- 241000828585 Gari Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 235000019398 chlorine dioxide Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000019197 fats Nutrition 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP821077971 | 1982-08-25 | ||
| EP82107797A EP0101752B1 (de) | 1982-08-25 | 1982-08-25 | Umkehrprozess zum Herstellen von Chrommasken |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5945443A true JPS5945443A (ja) | 1984-03-14 |
| JPH035573B2 JPH035573B2 (en, 2012) | 1991-01-25 |
Family
ID=8189193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58102945A Granted JPS5945443A (ja) | 1982-08-25 | 1983-06-10 | クロム・マスクの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4489146A (en, 2012) |
| EP (1) | EP0101752B1 (en, 2012) |
| JP (1) | JPS5945443A (en, 2012) |
| DE (1) | DE3272888D1 (en, 2012) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01304457A (ja) * | 1988-06-02 | 1989-12-08 | Fujitsu Ltd | パターン形成方法 |
| JP2013083920A (ja) * | 2011-09-27 | 2013-05-09 | Toppan Printing Co Ltd | フォトマスクの製造方法 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046074A (ja) * | 1983-08-24 | 1985-03-12 | Toshiba Corp | 電界効果トランジスタの製造方法 |
| US4706167A (en) * | 1983-11-10 | 1987-11-10 | Telemark Co., Inc. | Circuit wiring disposed on solder mask coating |
| GB2189903A (en) * | 1986-04-01 | 1987-11-04 | Plessey Co Plc | An etch technique for metal mask definition |
| US4774164A (en) * | 1987-04-06 | 1988-09-27 | Tegal Corporation | Chrome mask etch |
| US5089361A (en) * | 1990-08-17 | 1992-02-18 | Industrial Technology Research Institute | Mask making process |
| JP2000114246A (ja) * | 1998-08-07 | 2000-04-21 | Ulvac Seimaku Kk | ドライエッチング方法および装置、フォトマスクおよびその作製方法、ならびに半導体回路およびその製作方法 |
| US6409312B1 (en) | 2001-03-27 | 2002-06-25 | Lexmark International, Inc. | Ink jet printer nozzle plate and process therefor |
| US6901653B2 (en) * | 2002-04-02 | 2005-06-07 | Hitachi Global Storage Technologies Netherlands B.V. | Process for manufacturing a magnetic head coil structure |
| WO2020138855A1 (ko) * | 2018-12-26 | 2020-07-02 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 포토마스크 |
| CN111487845A (zh) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | 一种可以直接剥离的led管芯电极掩模图形的制作方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5314570A (en) * | 1976-07-26 | 1978-02-09 | Nippon Telegr & Teleph Corp <Ntt> | Production of photo mask |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3795557A (en) * | 1972-05-12 | 1974-03-05 | Lfe Corp | Process and material for manufacturing semiconductor devices |
| US4132586A (en) * | 1977-12-20 | 1979-01-02 | International Business Machines Corporation | Selective dry etching of substrates |
| US4184909A (en) * | 1978-08-21 | 1980-01-22 | International Business Machines Corporation | Method of forming thin film interconnection systems |
-
1982
- 1982-08-25 EP EP82107797A patent/EP0101752B1/de not_active Expired
- 1982-08-25 DE DE8282107797T patent/DE3272888D1/de not_active Expired
-
1983
- 1983-06-10 JP JP58102945A patent/JPS5945443A/ja active Granted
- 1983-08-17 US US06/524,182 patent/US4489146A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5314570A (en) * | 1976-07-26 | 1978-02-09 | Nippon Telegr & Teleph Corp <Ntt> | Production of photo mask |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01304457A (ja) * | 1988-06-02 | 1989-12-08 | Fujitsu Ltd | パターン形成方法 |
| JP2013083920A (ja) * | 2011-09-27 | 2013-05-09 | Toppan Printing Co Ltd | フォトマスクの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4489146A (en) | 1984-12-18 |
| EP0101752B1 (de) | 1986-08-27 |
| JPH035573B2 (en, 2012) | 1991-01-25 |
| DE3272888D1 (en) | 1986-10-02 |
| EP0101752A1 (de) | 1984-03-07 |
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